to C 92 1.emitter 2.base 3.collector to-92 plastic-encapsulate transistors a44 transistor (npn) features z high breakdown voltage maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol t est conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 400 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 400 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 5 v collector cut-off current i cbo v cb =400v,i e =0 0.1 a collector cut-off current i ceo v ce =400v,i b =0 5 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a h fe(1) v ce =10v, i c =10ma 80 300 h fe(2) v ce =10v, i c =1ma 70 h fe(3) v ce =10v, i c =100ma 40 dc current gain h fe(4) v ce =10v, i c =50ma 80 v ce(sat)(1) i c =10ma,i b =1ma 0.2 v collector-emitter saturation voltage v ce(sat)(2) i c =50ma,i b =5ma 0.3 v base-emitter saturation voltage v be(sat) i c =10ma,i b =1ma 0.75 v transition frequency f t v ce =20v, i c =10ma,f=30mhz 50 mhz classification of h fe(1) rank a b1 b2 c range 80-100 100-150 150-200 200-300 symbol para meter value unit v cbo collector-base voltage 400 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 5 v i c collector current -continuous 0. 2 a p c collector power dissipation 625 mw r ja thermal resistance f rom junction t o a mbient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 i c m collector current -pulsed 0. 3 a 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
10 1 10 100 1000 11 01 0 0 100 11 01 0 0 10 0 25 50 75 100 125 150 0 125 250 375 500 625 750 1 10 100 0.2 0.4 0.6 0.8 1.0 11 01 0 0 0 50 100 150 200 0 5 10 15 20 25 0 5 10 15 f=1mhz i e =0 / i c =0 t a =25 a44 reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib c ib c ob transition frequency f t (mhz) collector current i c (ma) v ce =20v t a =25 i c f t t a =100 common emitter v ce = 10v t a =25 collector current i c (ma) dc current gain h fe i c h fe collector power dissipation p c (mw) ambient temperature t a ( ) p c t a collector current i c (a) base-emitter saturation voltage v besat (v) t a =25 t a =100 =10 i c v besat 3 1 30 10 1000 100 200 200 t a =25 t a =100 =10 v cesat i c collector-emitter saturation voltage v cesat (mv) collector current i c (a) 200 common emitter t a =25 80ua 72ua 64ua 56ua 48ua 40ua 32ua 24ua 16ua i b =8ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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