t o-92 plastic-encapsulate transistors s9012 transistor (pnp) features z complementary to s9013 z excellent h fe linearity maximum ratings (t a =25 unless otherwise noted) symbol para m eter value units v cbo collector-base voltage -40 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -5 v i c collector current -continuous -500 ma p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical chara c teristics (ta=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -100 a, i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -1ma,i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-40v, i e =0 -0.1 a collector cut-off current i ceo v ce =-20v, i b =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a h fe v ce =- 1 v,i c =- 50 ma 64 400 dc current gain collector-emitter saturation voltage v ce(sat) i c =-500ma, i b = -50ma -0.6 v base-emitter saturation voltage v be(sat) i c =-500ma, i b = -50ma -1.2 v transition frequency f t v ce =-6v, i c = -20ma f= 30mhz 150 mhz classification of h fe rank d e f g h i j range 64-91 78-112 96-135 112-166 144-202 190-300 300-400 to-92 1. emitter 2. base 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
-0 -2 -4 -6 -8 -10 -12 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -0 -300 -600 -900 -1200 -1 -10 -100 -1 -10 -100 10 100 -0.1 -1 -10 1 10 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 -1 -10 -100 -400 -800 -1200 -1 -10 -100 -10 -100 -1 -10 -100 10 100 common emitter t a =25 -20ua -18ua -16ua -14ua -12ua -10ua -8ua -6ua collector-emitter voltage v ce (v) collector current i c (ma) i c ?? v ce i b =-2ua -4ua -500 v be i c ?? t a = 2 5 t a = 1 0 0 common emitter v ce =-1v collector current i c (ma) base-emmiter voltage v be (mv) i c common emitter v ce =-6v t a =25 transition frequency f t (mhz) collector current i c (ma) 400 -20 v cb /v eb c ob /c ib ?? reverse voltage v (v) capacitance c (pf) c ib c ob f=1mhz i e =0/i c =0 t a =25 50 p c ?? t a collector power dissipation p c (mw) ambient temperature t a ( ) f t ?? -500 t a =1 0 0 t a =2 5 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector current i c (ma) -500 s9012 -500 =10 t a = 2 5 t a = 1 0 0 i c v cesat ?? collector-emitter saturation voltage v cesat (v) collector current i c (ma) dc current gain h fe collector current i c (ma) t a =25 t a =100 h fe ?? i c 500 -500 v ce =-1v 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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