advanced power dual n-channel enhancement electronics corp. mode power mosfet bottom exposed dfn bv dss 30v low on-resistance r ds(on) 12m small size & lower profile i d 13a rohs compliant & halogen-free description absolute maximum ratings symbol parameter units v ds drain-source voltage v v gs gate-source voltage v i d @t a =25 continuous drain current 3 , v gs @ 10v a i d @t a =70 continuous drain current 3 , v gs @ 10v a i dm pulsed drain current 1 a p d @t a =25 total power dissipation w t stg storage temperature range t j operating junction temperature range symbol rating units rthj-a 40 /w data & specifications subject to change without notice -55 to 150 30 + 20 thermal data 201208212 1 parameter maximum thermal resistance, junction-ambient 3 halogen-free product -55 to 150 AP2430GN3-HF rating 13 10.4 30 3.1 a dvanced power mosfets from apec provide the designe r with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the dfn 3x3 package is well suited for low current dc/dc applications. g2 d2 s2 g1 d1 s1 d1 d1 d2 d2 s1 g1 s2 g2 dfn 3x3 d1 d2
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =8a - 9.7 12 m v gs =4.5v, i d =6a - 14.4 18 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.4 3 v g fs forward transconductance v ds =10v, i d =8a - 15 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =10a - 14 22 nc q gs gate-source charge v ds =15v - 3.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 7.5 - nc t d(on) turn-on delay time v ds =15v - 10 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 ? -28- ns t f fall time v gs =10v - 8 - ns c iss input capacitance v gs =0v - 1080 1720 pf c oss output capacitance v ds =15v - 195 - pf c rss reverse transfer capacitance f=1.0mhz - 170 - pf r g gate resistance f=1.0mhz 0.85 1.7 3.4 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =10a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 22 - ns q rr reverse recovery charge di/dt=100a/s - 13 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 5sec ; 100 o c/w at steady state. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP2430GN3-HF
a p2430gn3-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =8a v g =10v 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 8 10 12 14 16 18 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =6a t a =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) i d =250ua
AP2430GN3-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. ambient temperature 4 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t a =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = pdm x r thja + t a r thja =100 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0 8 16 24 32 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =15v 0 400 800 1200 1600 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on) 0 10 20 30 40 50 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j =-40 o c 0 4 8 12 16 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a)
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