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1H220M PT7742 9973G BUX22 V56CH8 AM79534 AN5290 67040
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  savantic semiconductor product specification silicon npn power transistors 2sC1448 d escription with to-220 package high collector-emitter breakdown voltage : v c eo =150v(min) applications power amplifier applications vertical output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current 1.5 a i b base current 0.5 a t a =25 1.5 p c collector power dissipation t c =25 25 w t j junction temperature 150  t stg storage temperature -55~150  free datasheet http:///
savantic semiconductor product specification 2 silicon npn power transistors 2sC1448 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma; i b =0 150 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =0.5a; i b =50m a 1.5 v i cbo collector cut-off current v cb =150v;i e =0 20 a i ebo emitter cut-off current v eb =5v; i c =0 20 a h fe dc current gain i c =0.5a ; v ce =10v 40 140 f t transition frequency i c =0.5a ; v ce =10v 5 mhz free datasheet http:///
savantic semiconductor product specification 3 silicon npn power transistors 2sC1448 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm) free datasheet http:///


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