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| to ? 92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors 2SC3199 transistor (npn) features z high current capability z high dc current gain z small package applications z audio amplifier applications z am amplifier applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 5 v collector cut-off current i cbo v cb =50v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =6v, i c =2ma 70 700 collector-emitter saturation voltage v ce(sat) i c =100ma,i b =10ma 0.25 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 3.5 pf transition frequency f t v ce =10v,i c =1ma 80 mhz classification of h fe rank o y gr bl range 70-140 120-240 200-400 300-700 symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current 0.15 a p c collector power dissipation 400 mw r ja thermal resistance from junction to ambient 312 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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