suface mount package. s mhop microelectronics c orp. a SP2013 symbol v ds v gs i dm 75 w a p d c 1.67 -55 to 150 i d units parameter -20 -8.5 -49 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max -20v -8.5a 21 @ vgs=-4.0v 20 @ vgs=-4.5v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja www.samhop.com.tw jul,18,2013 1 details are subject to change without notice. t a =25 c t a =70 c a t a =70 c w green product -6.8 1.07 25 @ vgs=-3.1v 28 @ vgs=-2.5v 22 @ vgs=-3.7v p-channel enhancement mode field effect transistor d 4 3 2 1 d d d d g s s 5 6 7 8 s tson 3.3 x 3.3 pin 1 ver 1.1
ver 1.1 symbol min typ max units bv dss -20 v -1 i gss 100 na v gs(th) -0.5 v m ohm v gs =-4.5v , i d =-4.25a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =-1.0ma v ds =-16v , v gs =0v v gs = 12v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua on characteristics SP2013 -0.9 -1.3 g fs 25 s c iss 1860 pf c oss 300 pf c rss 258 pf q g 39 nc 81 nc q gs 126 nc q gd 58 t d(on) 23 ns t r 1.8 ns t d(off) 9.2 ns t f ns gate-drain charge v ds =-10v,v gs =0v switching characteristics gate-source charge v dd =-16v i d =-4.25a v gs =-4.5v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =-10v , i d =-4.25a input capacitance output capacitance dynamic characteristics forward transconductance reverse transfer capacitance v gs =-4.0v , i d =-4.25a m ohm c f=1.0mhz c v ds =-16v,i d =-8.5a, v gs =-4.5v drain-source diode characteristics and maximum ratings v sd diode forward voltage v gs =0v,i s =-8.5a -0.85 -1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.drain current limited by maximum junction temperature. _ _ www.samhop.com.tw jul,18,2013 2 _ 16 20 16.5 21 v gs =-3.7v , i d =-4.25a m ohm v gs =-2.5v , i d =-4.25a m ohm 22 28 12 12.5 18 v gs =-3.1v , i d =-4.25a m ohm 19 25 14 17 22 13
SP2013 ver 1.1 www.samhop.com.tw jul,18,2013 3 0 0 20 120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rated power - % derating factor of forward bias safe operating area 0 0 0.5 3 2.5 2 1.5 1 150 125 100 75 50 25 175 t a - ambient temperature - c pt - total power dissipation - w total power dissipation vs. ambient temperature mounted on fr-4 board of 1 inch 2 , 2oz 0.1 1 10 10 0.1 100 v gs =-4.5v single pulse t a =25 c r d s (on) limit 0.01 forward bias safe operating area 100us 1ms 10ms dc -v ds - drain to source voltage - v -i d - drain current - a 1s 1 pw - pulse width - s rth(ch-a) - transient thermal resistance - c/w transient thermal resistance vs. pulse width 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 mounted on fr-4 board of 1 inch 2 , 2oz single pulse 10 s 10us
SP2013 ver 1.1 www.samhop.com.tw jul,18,2013 4 0 0 6 12 1 0.8 0.6 0.4 0.2 -v ds - drain to source voltage - v -i d - drain current - a drain current vs. drain to source voltage v gs = -4.5 v 0.01 0 0.1 100 10 1 2.5 2 1.5 1 0.5 -v gs - gate to source voltage - v -i d - drain current - a forward transfer characteristics 3 25 c 75 c 125 c t a = -25 c -50 0.8 0.7 0.6 150 100 50 0 t ch - channel temperature - c -v gs(off) - gate to source cut-off voltage - v gatebto soure cut-off voltage vs. channel temperature i d = -1.0ma 0.01 0.01 0.1 100 10 1 100 10 1 0.1 -i d - drain current - a . y fs . - forward transfer admittance - s forward transfer admittance vs. drain current 0.9 t a = -25 c 25 c 75 c 125 c 0 10 40 30 20 100 10 1 0.1 -i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. drain current v gs = 2.5 v 3.1 v 4.0 v 4.5 v 0 0 15 60 45 30 8 6 4 2 -v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage i d = -4.25 a 12 10 3.7 v 50 30 18 24 -4.0 v -3.1 v -3.7 v -2.5 v 1.0
SP2013 ver 1.1 www.samhop.com.tw jul,18,2013 5 q g - gate charge -nc -v gs - gate to drain voltage - v dynamic input characteristics 0.01 0.1 100 10 1 0.9 0.6 0.3 0 -v f(s-d) - source to drain voltage - v -i f - diode forward current - a source to drain diode forward voltage 0 -50 10 40 30 20 150 100 50 0 t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. channel temperature i d = -4.25 a 50 v gs = -2.5 v -3.1 v -4.0 v -4.5 v 0 0 4 3 2 20 15 10 5 1 1.8 1.5 1.2 v gs = 0 v -3.7 v 25 v dd = -4 v -10 v -16 v i d = -8.5 a -i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns switching characteristics 10 0.1 100 1000 100 10 1 -v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf capacitance vs. drain to source voltage c oss c rss c iss 1 0.1 10 100 10 1 t d(on) t f v dd = -16.0 v v gs = -4.5 v r g = 6 t d(off) t r
SP2013 www.samhop.com.tw jul,18,2013 6 package outline dimensions ver 1.1 tson 3.3 x 3.3 symbols millimeters a b c d d1 d2 d3 e e1 e2 min. nom. max. 0.70 0.75 0.25 0.30 0.10 0.15 3.25 3.35 3.00 3.10 1.78 1.88 0.13 3.20 3.30 3.00 3.15 0.80 0.35 0.25 3.45 3.20 1.98 3.40 3.20 e h l l1 m 2.39 2.49 0.65 bsc 0.30 0.39 0.30 0.40 0.13 10 o 2.59 0.50 0.50 12 o d d1 d3 e l1 m c a e1 e 0 d2 b l h e2 pin 1 0.15 0
ver 1.1 www.samhop.com.tw jun,18,2013 7 SP2013 tson 3.3 x 3.3 tape and reel data tson 3.3 x 3.3 tape tson 3.3 x 3.3 reel unit: @ package s mini 8 h1 d d1 ee1e2 h pp1 p2 t 3.70 ? 1.50 ? 1.50 1.10 2 0.10 4.0 2 0.10 2.0 2 0.05 0.3 2 0.05 unit: @ tape size 12 @ reel size a b c d n w1 w2 330 2 ! 1.0 1.5 feeding direction 2 0.10 (min) +0.10 - 0.00 12.0 +0.30 - 0.10 1.75 2 0.10 5.50 2 0.05 3.70 2 0.10 k 8.0 2 0.10 a n w1 w2 d b c 13 " + 0.5 - 0.2 ? 13.0 + 0.5 - 0.2 20.2(ref.) 178 + 0.0 - 2.0 12.4 + 2.0 - 0.0 18.4(ref.) d1 p2 p1 e e1 e2 p d a a b b h1 t k h section a-a section b-b
top marking definition tson 3.3 x 3.3 2013 xxxxxx product no. wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no. pin 1 SP2013 www.samhop.com.tw jul,18,2013 8 ver 1.1
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