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this is information on a product in full production. september 2012 doc id 022906 rev 2 1/16 16 STFW69N65M5 stw69n65m5 n-channel 650 v, 0.037 typ., 58 a mdmesh? v power mosfet in to-3pf and to-247 packages datasheet ? production data features worldwide best r ds(on) * area higher v dss rating and high dv/dt capability excellent switching performance 100% avalanche tested applications switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order codes v dss @ t jmax r ds(on) max i d STFW69N65M5 710 v < 0.045 58 a stw69n65m5 to-247 to-3pf 1 2 3 1 1 1 1 2 3 !-v $ ' 3 table 1. device summary order codes marking package packaging STFW69N65M5 69n65m5 to-3pf tu b e stw69n65m5 to-247 www.st.com
contents STFW69N65M5, stw69n65m5 2/16 doc id 022906 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STFW69N65M5, stw69n65m5 electrical ratings doc id 022906 rev 2 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-3pf to-247 v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 58 (1) 1. limited by maximum junction temperature. 58 a i d drain current (continuous) at t c = 100 c 36.5 (1) 36.5 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 232 (1) 232 a p tot total dissipation at t c = 25 c 79 330 w dv/dt (3) 3. i sd 58 a, di/dt 400 a/s; v ds peak < v (br)dss, v dd =400 v peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1s; tc=25c) 3500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-3pf to-247 r thj-case thermal resistance junction-case max 1.58 0.38 c/w r thj-amb thermal resistance junction-ambient max 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 12 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 1410 mj
electrical characteristics STFW69N65M5, stw69n65m5 4/16 doc id 022906 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 29 a 0.037 0.045 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 6420 170 11 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -536-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -146-pf r g intrinsic gate resistance f = 1 mhz open drain - 1.2 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 29 a, v gs = 10 v (see figure 18 ) - 143 38 64 - nc nc nc
STFW69N65M5, stw69n65m5 electrical characteristics doc id 022906 rev 2 5/16 table 7. switching times symbol parameter test conditions min. typ. max unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 38 a, r g = 4.7 , v gs = 10 v (see figure 19 and figure 22 ) - 102 13.5 10 19 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 58 232 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 58 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 58 a, di/dt = 100 a/s v dd = 100 v (see figure 19 ) - 480 11 46 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 58 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 19 ) - 592 16 53 ns c a
electrical characteristics STFW69N65M5, stw69n65m5 6/16 doc id 022906 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-3pf figure 3. thermal impedance for to-3pf ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ?s ms ms 4j?# 4c?# 3inlge pulse !-v 10 -5 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 to 3 pf figure 4. safe operating area for to-247 figure 5. thermal impedance for to-247 ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ?s ms ms 4j?# 4c?# 3inlge pulse !-v figure 6. output characteristics figure 7. transfer characteristics ) $ 6 $3 6 ! 6 6 6 '3 6 6 !-v ) $ 6 '3 6 ! 6 $3 6 !-v
STFW69N65M5, stw69n65m5 electrical characteristics doc id 022906 rev 2 7/16 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature 6 '3 1 g n# 6 6 $$ 6 ) $ ! 6 $3 6 '3 !-v 2 $3on ) $ ! /hm 6 '3 6 !-v # 6 $3 6 p& #iss #oss #rss !-v % oss 6 $3 6 ?* !-v v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a v d s =v g s am05459v2 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 i d =29a v g s =10v am05460v2
electrical characteristics STFW69N65M5, stw69n65m5 8/16 doc id 022906 rev 2 figure 14. source-drain diode forward characteristics figure 15. normalized b vdss vs temperature figure 16. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 %on %off ) $ ! 6 $$ 6 6 '3 6 % 2 ' * !-v
STFW69N65M5, stw69n65m5 test circuits doc id 022906 rev 2 9/16 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform !-v 6 '3 0 7 6 $ 2 ' 2 , $54 & & 6 $$ !-v 6 $$ k k k k k 6 6 i 66 '-!8 & 0 7 ) ' #/.34 n& $54 6 ' !-v ! $ $54 3 " ' ! ! " " 2 ' ' &!34 $)/$% $ 3 , ( & & 6 $$ !-v 6 i 0 w 6 $ ) $ $54 , & & 6 $$ !-v 6 "2 $33 6 $$ 6 $$ 6 $ ) $- ) $ am05540v1 ind u ctive lo a d t u rn -off id vg s vd s 90 % vd s 10 % id 90 % vg s on t d (v) t c (off) 10 % vd s 90 % id vg s (i(t)) on t f (i) t r (v) ))
package mechanical data STFW69N65M5, stw69n65m5 10/16 doc id 022906 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STFW69N65M5, stw69n65m5 package mechanical data doc id 022906 rev 2 11/16 table 9. to-3pf mechanical data dim. mm min. typ. max. a5.30 5.70 c2.80 3.20 d3.10 3.50 d1 1.80 2.20 e0.80 1.10 f0.65 0.95 f2 1.80 2.20 g 10.30 11.50 g1 5.45 h 15.30 15.70 l 9.80 10 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n1.80 2.20 r3.80 4.20 dia 3.40 3.80
package mechanical data STFW69N65M5, stw69n65m5 12/16 doc id 022906 rev 2 figure 23. to-3pf drawing l 3 l di a l2 a c d d1 e h l5 l4 r n l6 l7 f( 3 x) f2( 3 x) g1 g 76271 3 2_c
STFW69N65M5, stw69n65m5 package mechanical data doc id 022906 rev 2 13/16 table 10. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data STFW69N65M5, stw69n65m5 14/16 doc id 022906 rev 2 figure 24. to-247 drawing 0075 3 25_g
STFW69N65M5, stw69n65m5 revision history doc id 022906 rev 2 15/16 5 revision history table 11. document revision history date revision changes 27-feb-2012 1 first release. 28-sep-2012 2 ? modified: note 3 of ta bl e 2 , values in ta bl e 4 , typ. values in ta bl e 6 , 7 and 8 ?curves inserted ? minor text changes
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