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| inchange semiconductor product specification silicon npn power transistors BU508AX description ? with to-3pml package ? high voltage ? high speed switching applications ? for use in horizontal deflection circuits of colour tv receivers. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v i c collector current (dc) 8 a i cm collector current (pulse) 15 a i b base current (dc) 4 a i bm base current (pulse) 6 a p tot total power dissipation t c =25 ?? 45 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU508AX characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0,l=25mh 700 v v cesat collector-emitter saturation voltage i c =4.5a ;i b =1.6a 1.0 v v besat base-emitter saturation voltage i c =4.5a ;i b =2a 1.1 v i ces collector cut-off current v ce =ratedv ce; v be =0 t c =125 ?? 1.0 2.0 ma i ebo emitter cut-off current v eb =6.0v; i c =0 10 ma h fe dc current gain i c =100ma ; v ce =5v 6 13 30 f t transition frequency i e =0.1a ; v ce =5v 7 mhz cob output capacitance v cb =10v;i e =0;f=1.0mhz 125 pf inchange semiconductor product specification 3 silicon npn power transistors BU508AX package outline fig.2 outline dimensions |
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