elektronische bauelemente SSPR46N03 46a , 30v , r ds(on) 9 m ? n-channel enhancement mode power mosfet 18-apr-2014 rev.a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description the ssrs46n03 provide the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. the spr-8pp p ackage is universally preferred for all commercial-industr ial surface mount applications and suited for low voltage appli cations such as dc/dc converters. features lower gate charge simple drive requirement fast switching characteristic marking package information package mpq leader size spr-8pp 3k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t c =25c 46 t c =100c 29 t a =25c 11 continuous drain current 1 @v gs =10v t a =70c i d 8.7 a pulsed drain current 2 i dm 92 a single pulse avalanche energy 3 eas 130 mj avalanche current i as 34 a power dissipation 4 t a =25c p d 29 w operating junction & storage temperature t j , t stg 55~150 c thermal resistance rating thermal resistance junction-ambient 1 (max). r ja 75 c / w thermal resistance junction-case 1 (max). r jc 4.31 c / w 46n03 = date code spr-8pp millimeter millimeter ref. min. max. ref. min. max. a 3.25 3.40 g 1.35 1.55 b 3.05 3.25 h 0.24 0.35 c 3.2 0 3.40 i 1.13 ref. d 3.00 3.20 j 0.30 0.50 e 0.65 bsc. k 0.10 0.20 f 2.40 2.60 l 0.70 0.90 g s s s d d d d
elektronische bauelemente SSPR46N03 46a , 30v , r ds(on) 9 m ? n-channel enhancement mode power mosfet 18-apr-2014 rev.a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 30 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 1 - 2.5 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 20v - - 1 v ds =24v, v gs =0, t j =25c drain-source leakage current i dss - - 5 a v ds =24v, v gs =0, t j =55c - - 9 v gs =10v, i d =30a static drain-source on-resistance 2 r ds(on) - - 13.5 m v gs =4.5v, i d =15a gate resistance r g - 2.1 3.5 f =1.0mhz total gate charge(10v) q g - 10.6 - gate-source charge q gs - 4.2 - gate-drain change q gd - 4 - nc i d =15a v ds =15v v gs =4.5v turn-on delay time 2 t d(on) - 6.4 - rise time t r - 70.6 - turn-off delay time t d(off) - 22.4 - fall time t f - 8 - ns v dd =15v i d =15a v gs =10v r g =3.3 input capacitance c iss - 1127 - output capacitance c oss - 194 - reverse transfer capacitance c rss - 77 - pf v gs =0 v ds =15v f =1.0mhz guaranteed avalanche characteristics single pulse avalanche energy 3 eas 45 - - mj v d =25v, l=0.1mh, i as =20a source-drain diode diode forward voltage 2 v sd - - 1 v i s =1a, v gs =0, t j =25c continuous source current 1,4 i s - - 46 a pulsed source current 2,4 i sm - - 92 a v d =v g =0, force current reverse recovery time t rr - 12 - ns reverse recovery charge q rr - 3.7 - nc i f =30a, dl/dt=100a/ s, t j =25c note: 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2oz copper , Q 10sec , 125 /w at steady state 2. the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3. the eas data shows max. rating . the test condit ion is v dd =25v,v gs =10v,l=0.1mh,i as =34a 4. the power dissipation is limited by 150c juncti on temperature 5. the min. value is 100% eas tested guarantee. 6. the data is theoretically the same as id and idm , in real applications , should be limited by tota l power dissipation.
elektronische bauelemente SSPR46N03 46a , 30v , r ds(on) 9 m ? n-channel enhancement mode power mosfet 18-apr-2014 rev.a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSPR46N03 46a , 30v , r ds(on) 9 m ? n-channel enhancement mode power mosfet 18-apr-2014 rev.a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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