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this is information on a product in full production. february 2013 doc id 18313 rev 5 1/13 13 STW48NM60N n-channel 600 v, 0.055 typ., 44 a mdmesh? ii power mosfet in a to-247 package datasheet ? production data features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order codes v dss @ t jmax r ds(on) max i d STW48NM60N 650 v < 0.07 44 a to-247 1 2 3 $0y ' * 6 table 1. device summary order code marking package packaging STW48NM60N 48nm60n to-247 tube www.st.com
contents STW48NM60N 2/13 doc id 18313 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STW48NM60N electrical ratings doc id 18313 rev 5 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 44 a i d drain current (continuous) at t c = 100 c 28 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 176 a p tot total dissipation at t c = 25 c 330 w i as avalanche current, repetitive or not- repetitive (pulse width limited by tj max) 8a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 457 mj dv/dt (2) 2. i sd 44 a, di/dt 400 a/ s, v ds peak v (br)dss , vdd = 80% v (br)dss . peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.38 c/w r thj-amb thermal resistance junction-ambient max 50 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics STW48NM60N 4/13 doc id 18313 rev 5 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a234v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 20 a 0.055 0.07 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 4285 212 9.5 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 600 - pf r g intrinsic gate resistance f = 1 mhz, v gs = 0 1.6 q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 44 a, v gs = 10 v, (see figure 15) - 124 20 61.5 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 20 a r g =4.7 v gs = 10 v (see figure 14) - 99 18 214 25.5 - ns ns ns ns
STW48NM60N electrical characteristics doc id 18313 rev 5 5/13 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 44 176 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 44 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 44 a, di/dt = 100 a/ s v dd = 100 v (see figure 16) - 472 10.5 44.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 44 a, di/dt = 100 a/ s v dd = 100 v, t j = 150 c (see figure 16) - 568 14 50 ns c a
electrical characteristics STW48NM60N 6/13 doc id 18313 rev 5 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am09091v1 i d 60 40 20 0 0 10 v ds (v) 20 (a) 5 15 80 100 5v 6v 7v v gs =10v am09092v1 i d 60 40 20 0 0 4 v gs (v) 8 (a) 2 6 10 80 100 v ds =19v am09093v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 i d =1ma 1.08 1.10 am09028v1 r ds(on) 0.054 0.053 0.052 0.051 0 20 i d (a) ( ) 10 35 0.055 0.056 0.057 0.058 v gs =10v 15 25 30 40 5 am09095v1
STW48NM60N electrical characteristics doc id 18313 rev 5 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. output capacitance stored energy figure 11. normalized gate threshold voltage vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized on-resistance vs temperature v gs 6 4 2 0 0 20 q g (nc) (v) 80 8 40 60 10 v dd =480v i d =44a 100 12 300 200 100 0 400 500 v ds 120 140 am09096v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss am09097v1 e oss 4 0 0 100 v ds (v) (j) 400 200 300 8 500 600 12 16 20 24 am15357v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a 125 am09098v1 v sd 0 20 i sd (a) (v) 10 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 t j =-50c t j =150c t j =25c 5 15 25 35 1.4 am09100v1 r ds(on) 1.3 1.1 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 125 0.7 1.9 1.7 1.5 2.1 i d =20a am09099v1
test circuits STW48NM60N 8/13 doc id 18313 rev 5 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
STW48NM60N package mechanical data doc id 18313 rev 5 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STW48NM60N 10/13 doc id 18313 rev 5 table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
STW48NM60N package mechanical data doc id 18313 rev 5 11/13 figure 20. to-247 drawing 0075325_g
revision history STW48NM60N 12/13 doc id 18313 rev 5 5 revision history table 9. document revision history date revision changes 06-dec-2010 1 first release. 15-apr-2011 2 document status promoted from preliminary data to datasheet. 04-jul-2011 3 updated figure 7 . 10-oct-2012 4 ? modified: figure 2 ? added: figure 10 ? updated: section 4: package mechanical data 19-feb-2013 5 updated table 7: source drain diode .
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