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v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30a v23990-k222-a-00-14 maximum ratings / h?chstzul?ssige werte parameter condition symbol values unit max. input rectifier bridge gleichrichter repetitive peak reverse voltage v rrm 1600 v periodische rckw. spitzensperrspannung forward current per diode dc current t h =80c; i fa v 40 limited by power terminal a dauergrenzstrom tc=80c 40 limited by power terminal surge forward current t p =10ms t j =25c i fsm 370 a sto?strom grenzwert i 2 t-value t p =10ms t j =25c i 2 t 680 a 2 s grenzlastintegral power dissipation per diode t j =150c t h =80c p tot 50 w verlustleistung pro diode t c =80c 76 max. chip temperature t jmax 150 c max. chiptemperatur transistor inverter transistor wechselrichter collector-emitter break down voltage v ce 600 v kollektor-emitter-sperrspannung dc collector current t j =t jmax t h =80c, i c 28 a kollektor-dauergleichstrom t c =80c 36 repetitive peak collector current t p limited by t jmax i cpuls 90 a periodischer kollektorspitzenstrom power dissipation per igbt t j =t jmax t h =80c p tot 54 w verlustleistung pro igbt t c =80c 82 gate-emitter peak voltage v ge 20 v gate-emitter-spitzenspannung sc withstand time * tj150c v ge =15 v t sc 5u s kurzschlu?verhalten * v cc =360 v max. chip temperature t jmax 175 c max. chiptemperatur diode inverter diode wechselrichter dc forward current t j =t jmax t h =80c, i f 26 a dauergleichstrom t c =80c 34 repetitive peak forward current t p limited by t jmax i frm 90 a periodischer spitzenstrom power dissipation per diode t j =t jmax t h =80c p tot 40 w verlustleistung pro diode t c =80c 60 max. chip temperature t jmax 175 c max. chiptemperatur miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page1 copyright by vincotech revision:1
v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30a v23990-k222-a-00-14 maximum ratings / h?chstzul?ssige werte parameter condition symbol values unit max. transistor brc transistor brc collector-emitter break down voltage v ce 600 v kollektor-emitter-sperrspannung dc collector current t j =t jmax t h =80c, i c 28 a kollektor-dauergleichstrom t c =80c 36 repetitive peak collector current t p limited by t jmax i cpuls 90 a periodischer kollektorspitzenstrom power dissipation per igbt t j =t jmax t h =80c p tot 54 w verlustleistung pro igbt t c =80c 82 gate-emitter peak voltage v ge 20 v gate-emitter-spitzenspannung sc withstand time * tj150c v ge =15 v t sc 5u s kurzschlu?verhalten * v cc =360 v max. chip temperature t jmax 175 c max. chiptemperatur diode brc diode brc dc forward current t j =t jmax t h =80c, i f 26 a dauergleichstrom t c =80c 34 repetitive peak forward current t p limited by t jmax i frm 90 a periodischer spitzenstrom power dissipation per diode t j =t jmax t h =80c p tot 40 w verlustleistung pro diode t c =80c 60 max. chip temperature t jmax 175 c max. chiptemperatur thermal properties thermische eigenschaften storage temperature t st g -40+125 c lagertemperatur operation temperature t o p -40+125 c betriebstemperatur insulation properties modulisolation insulation voltage t=1min v is 4000 vdc isolationsspannung creepage distance min 12,7 mm kriechstrecke clearance min 12,7 mm luftstrecke * allowed number of short circuits must be less than 1000 times, and time duration between short circuits should be more than 1 second! miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page2 copyright by vincotech revision:1
v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30a v23990-k222-a-00-14 characteristic values description symbol conditions unit t(c) other conditions v ge (v) v r (v) v ce (v) i c (a) if(a) (rgon-rgoff) v gs (v) v ds (v) i d (a) min typ max input rectifier bridge gleichrichter forward voltage v f tj=25c 25 0,8 1,08 1,35 v durchla?pannung tj=125c 1,03 threshold voltage (for power loss calc. only) v to tj=25c 0,89 v schleusenspannung tj=125c 25 0,78 slope resistance (for power loss calc. only) r t tj=25c 0,008 ohm ersatzwiderstand tj=125c 25 0,01 reverse current i r tj=25c 1500 0 0,1 ma sperrstrom tj=14010c 1500 0 1,5 thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thickness50um 1,39 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc warmeleitpaste dicke50um = 0,61 w/mk 0,92 k/w transistor inverter transistor wechselrichter gate emitter threshold voltage v ge(th) tj=25c vce=vge 0,00043 5 5,8 6,5 v gate-schwellenspannung tj=125c collector-emitter saturation voltage v ce(sat) tj=25c 15 30 1 1,67 2,2 v kollektor-emitter s?ttigungsspannung tj=125c 1,9 collector-emitter cut-off current incl. diode i ces tj=25c 0 600 0,2 ma kollektor-emitter reststrom tj=125c gate-emitter leakage current i ges tj=25c 20 0 0 350 na gate-emitter reststrom tj=125c integrated gate resistor r gint - ohm integrirter gate widerstand turn-on delay time t d(on) tj=25c rgoff= 8 ohm ns einschaltverz?gerungszeit tj=125c rgon= 4 ohm 0/15 300 30 18 rise time t r tj=25c rgoff= 8 ohm ns anstiegszeit tj=125c rgon= 4 ohm 0/15 300 30 18 turn-off delay time t d(off) tj=25c rgoff= 8 ohm ns abschaltverz?gerungszeit tj=125c rgon= 4 ohm 15/0 300 30 175 fall time t f tj=25c rgoff= 8 ohm ns fallzeit tj=125c rgon= 4 ohm 15/0 300 30 105 turn-on energy loss per pulse e on tj=25c rgoff= 8 ohm mws einschaltverlustenergie pro puls tj=125c rgon= 4 ohm 0/15 300 30 0,71 turn-off energy loss per pulse e off tj=25c rgoff= 8 ohm mws abschaltverlustenergie pro puls tj=125c rgon= 4 ohm 15/0 300 30 0,9 input capacitance c ies tj=25c f=1mhz 0 25 tbd nf eingangskapazit?t tj=125c output capacitance c oss tj=25c f=1mhz 0 25 tbd nf ausgangskapazit?t tj=125c reverse transfer capacitance c rss tj=25c f=1mhz 0 25 tbd nf rckwirkungskapazit?t tj=125c gate charge q gate tj=25c 15/0 300 30 nc gate ladung tj=125c 220 thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thickness50um 1,8 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc dicke50um = 0,61 w/mk 1,2 k/w coupled thermal resistance inverter diode-transistor r thjh thermal grease thickness50um tbd k/w gekoppelte w?rmewiderstand wechselrichter diode-transistor warmeleitpaste dicke50um = 0,61 w/mk values miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page3 copyright by vincotech revision:1
v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30a v23990-k222-a-00-14 characteristic values description symbol conditions unit t(c) other conditions v ge (v) v r (v) v ce (v) i c (a) if(a) (rgon-rgoff) v gs (v) v ds (v) i d (a) min typ max values diode inverter diode wechselrichter diode forward voltage v f tj=25c 30 1 1,65 2,3 v durchla?spannung tj=125c 1,66 peak reverse recovery current i rm tj=25c rgon= 8 ohm rckstromspitze tj=125c dif/dt = 1820 a/us 15/0 600 30 28 reverse recovery time t rr tj=25c rgon= 8 ohm ns sperreverz?gerungszeit tj=125c dif/dt = 1820 a/us 15/0 600 30 260 reverse recovered charge q rr tj=25c rgon= 8 ohm uc sperrverz?gerungsladung tj=125c dif/dt = 1820 a/us 15/0 600 30 2,5 reverse recovered energy erec tj=25c rgon= 8 ohm mws sperrverz?gerungsenergie tj=125c dif/dt = 1820 a/us 15/0 600 30 0,55 thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thickness50um 2,4 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc warmeleitpaste dicke50um = 0,61 w/mk 1,6 k/w transistor brc transistor brc gate emitter threshold voltage v ge(th) tj=25c vce=vge 0,00043 5 5,8 6,5 v gate-schwellenspannung tj=125c collector-emitter saturation voltage v ce(sat) tj=25c 15 30 1 1,67 2,2 v kollektor-emitter s?ttigungsspannung tj=125c 1,9 collector-emitter cut-off i ces tj=25c 0 600 0,2 ma kollektor-emitter reststrom tj=125c gate-emitter leakage current i ges tj=25c 20 0 0 350 na gate-emitter reststrom tj=125c integrated gate resistor r gint - ohm integrirter gate widerstand turn-on delay time t d(on) tj=25c rgoff= 8 ohm ns einschaltverz?gerungszeit tj=125c rgon= 4 ohm 0/15 300 30 18 rise time t r tj=25c rgoff= 8 ohm ns anstiegszeit tj=125c rgon= 4 ohm 0/15 300 30 18 turn-off delay time t d(off) tj=25c rgoff= 8 ohm ns abschaltverz?gerungszeit tj=125c rgon= 4 ohm 15/0 300 30 175 fall time t f tj=25c rgoff= 8 ohm ns fallzeit tj=125c rgon= 4 ohm 15/0 300 30 105 turn-on energy loss per pulse e on tj=25c rgoff= 8 ohm mws einschaltverlustenergie pro puls tj=125c rgon= 4 ohm 0/15 300 30 0,71 turn-off energy loss per pulse e of f tj=25c rgoff= 8 ohm mws abschaltverlustenergie pro puls tj=125c rgon= 4 ohm 15/0 300 30 0,9 input capacitance c iss tj=25c f=1mhz 0 25 tbd nf eingangskapazit?t tj=125c output capacitance c oss tj=25c f=1mhz 0 25 tbd nf ausgangskapazit?t tj=125c reverse transfer capacitance c ies tj=25c f=1mhz 0 25 tbd nf rckwirkungskapazit?t tj=125c gate charge q gate tj=25c 15/0 300 30 nc gate ladung tj=125c 220 thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thickness50um 1,8 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc warmeleitpaste dicke50um = 0,61 w/mk 1,2 k/w miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page4 copyright by vincotech revision:1
v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30a v23990-k222-a-00-14 characteristic values description symbol conditions unit t(c) other conditions v ge (v) v r (v) v ce (v) i c (a) if(a) (rgon-rgoff) v gs (v) v ds (v) i d (a) min typ max values diode brc diode brc diode forward voltage v f tj=25c 30 1 1,65 2,3 v durchla?spannung tj=125c 1,66 reverse current i r tj=25c rgon= 8 ohm sperrstrom tj=125c dif/dt = 1820 a/us 15/0 600 30 28 reverse recovery time t r r tj=25c rgon= 8 ohm ns sperreverz?gerungszeit tj=125c dif/dt = 1820 a/us 15/0 600 30 260 reverse recovered charge q r r tj=25c rgon= 8 ohm uc sperrverz?gerungsladung tj=125c dif/dt = 1820 a/us 15/0 600 30 2,5 reverse recovery energy e rec tj=25c rgon= 8 ohm mws sperrverz?gerungsenergie tj=125c dif/dt = 1820 a/us 15/0 600 30 0,55 thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thickness50um 2,4 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc warmeleitpaste dicke50um = 0,61 w/mk 1,6 k/w ptc-thermistor ptc-widerstand nominal resistance r 25 tj=25c tolerance = 3% 0,97 1 1,03 kohm nominaler widerstand r 100 tj=100c tolerance = 2% 1,637 1,67 1,703 kohm typical temperature coefficient tj=25c 0,76 %/k tipischer temperaturkoeffizient tj=125c recommended measuring current tj=25c 1 3 empfohlener messstrom tj=125c measured values tj=25c i m = 1ma 0,93 1,03 gemessene werte i m = 3ma 2,84 3,4 ma v i m v ptc miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page5 copyright by vincotech revision:1
v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30 a v23990-k222-a-00-14 output inverter fi gure 1 . typical output characteristic s fi gure 2 . typical output characteristic s output inverter igb t output inverter igb t ic= f(v ce ) ic= f(v ce ) parameter: tp = 250 us tj = 25 c parameter: tp = 250 us tj = 125 c v ge parameter: from: 7 v to 17 v v ge parameter: from: 7 v to 17 v in 1 v steps in 1 v steps fi gure 3 . typical transfer characteristic s output inverter igb t ic= f(v ge ) parameter: tp = 250 us v ce = 10 v 0 10 20 30 40 50 60 70 80 012345 v ce (v) ic (a) v ge =7v v ge =17v 0 10 20 30 40 50 60 70 80 012345 v ce (v) ic (a) v ge =7v v ge =17v 0 10 20 30 40 50 60 70 80 03691215 v ge (v) i c (a) 125 c 25 c miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page6 copyright by vincotech revision:1
v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30 a v23990-k222-a-00-14 output inverter figure 4. typical switching energy losses figure 5. typical switching energy losses as a function of collector current as a function of gate resistor output inverter igbt output inverter igbt e = f (ic) e = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v rgon= 16 ic = 30 a rgoff= 8 figure 6. typical switching times as a figure 7. typical switching times as a function of collector current function of gate resistor output inverter igbt output inverter igbt t = f (ic) t = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v rgon= 16 ic = 30 a rgoff= 8 e off e on erec 0 0,4 0,8 1,2 1,6 2 0 102030405060 i c (a) e (mws) e off e on erec 0 0,4 0,8 1,2 1,6 2 0 1530456075 r g ( ) e (mws) t doff t f t don t r 0,001 0,01 0,1 1 0 102030405060 ic (a) t ( s) t doff t f t don t r 0,001 0,01 0,1 1 0 1530456075 r g ( ) t ( s) miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page7 copyright by vincotech revision:1
v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30 a v23990-k222-a-00-14 output inverter figure 8. igbt transient thermal impedance as a function of pulse width z th jh = f(tp) parameter: d = tp / t rthjh = 1,80 k/w igbt thermal model values r (c/w) tau (s) 0,06 4,6e+00 0,22 5,4e-01 0,94 1,0e-01 0,34 2,0e-02 0,11 3,1e-03 0,11 3,0e-04 t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page8 copyright by vincotech revision:1
v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30 a v23990-k222-a-00-14 output inverte r fi gure 9 . power dissipation as a fi gure 10 . collector current as a function of heatsink temperatur e function of heatsink temperatur e output inverter igbt output inverter igbt p tot = f (th) i c = f (th) parameter: tj = 175 c parameter: tj = 175 c v ge = 15 v fi gure 11 . power dissipation as a fi gure 12 . forward current as a function of heatsink temperatur e function of heatsink temperatur e output inverter fre d output inverter fre d p tot = f (th) i f = f (th) parameter: tj = 175 c parameter: tj = 175 c 0 20 40 60 80 100 120 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 th ( o c) i c (a) 0 15 30 45 60 75 90 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 th ( o c) i f (a) miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page9 copyright by vincotech revision:1
v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30 a v23990-k222-a-00-14 brake fi gure 13 . typical output characteristic s fi gure 14 . typical output characteristic s brake igb t brake igb t ic= f(v ce ) ic= f(v ce ) parameter: tp = 250 us tj = 25 c parameter: tp = 250 us tj = 125 c v ge parameter: from: 7 v to 17 v v ge parameter: from: 7 v to 17 v in 1 v steps in 1 v steps figure 15. typical transfer characteristics brake igbt ic= f(v ge ) parameter: tp = 250 us v ce = 10 v 0 10 20 30 40 50 60 70 80 012345 v ce (v) ic (a) v ge =7v v ge =17v 0 10 20 30 40 50 60 70 80 012345 v ce (v) ic (a) v ge =7v v ge =17v 0 10 20 30 40 50 60 70 80 03691215 v ge (v) i c (a) 125 c 25 c miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page10 copyright by vincotech revision:1
v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30 a v23990-k222-a-00-14 brake figure 16. typical switching energy losses figure 17. typical switching energy losses as a function of collector current as a function of gate resistor brake igbt brake igbt e = f (ic) e = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v rgon = 16 ic = 30 a rgoff = 8 figure 18. typical switching times as a figure 19. typical switching times as a function of collector current function of gate resistor brake igbt brake igbt t = f (ic) t = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v rgon = 16 ic = 30 a rgoff = 8 e off e on erec 0 0,4 0,8 1,2 1,6 2 0 102030405060 i c (a) e (mws) e off e on erec 0 0,4 0,8 1,2 1,6 2 0 1530456075 r g ( ) e (mws) t doff t f t don t r 0,001 0,01 0,1 1 0 102030405060 ic (a) t ( s) t doff t f t don t r 0,001 0,01 0,1 1 0 1530456075 r g ( ) t ( s) miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page11 copyright by vincotech revision:1
v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30 a v23990-k222-a-00-14 brake figure 20. igbt transient thermal impedance as a function of pulse width z th jh = f(tp) parameter: d = tp / t rthjh = 1,80 k/w r (c/w) tau (s) 0,06 4,6e+00 0,22 5,4e-01 0,94 1,0e-01 0,34 2,0e-02 0,11 3,1e-03 0,11 3,0e-04 figure 21. power dissipation as a figure 22. collector current as a function of heatsink temperature function of heatsink temperature brake igbt brake igbt p tot = f (th) i c = f (th) parameter: tj = 175c parameter: tj = 175c v ge = 15 v t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 0 20 40 60 80 100 120 0 50 100 150 200 th ( o c) p tot (w) th ( o c) i c (a) miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page12 copyright by vincotech revision:1
v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30 a v23990-k222-a-00-14 input rectifier bridge figure 23. typical diode forward current as figure 24. diode transient thermal impedance a function of forward voltage as a function of pulse width rectifier diode i f =f(v f )z th jh = f(tp) parameter: tp = 250 us parameter: d = tp / t rthjh = 1,39 k/w figure 25. power dissipation as a figure 26. forward current as a function of heatsink temperature function of heatsink temperature rectifier diode rectifier diode p tot = f (th) i f = f (th) parameter: tj = 150c parameter: tj = 150c 0 10 20 30 40 50 60 70 80 0 0,4 0,8 1,2 1,6 2 v f (v) i f (a) tj=125c tj= 25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 0 20 40 60 80 100 120 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 th ( o c) i f (a) miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page13 copyright by vincotech revision:1
v23990-k222-a-pm target datasheet miniskiip? 2nd gen. pim size 2, 600v / 30 a v23990-k222-a-00-14 thermistor figure 27. typical ptc characteristic as afunction of temperature r t = f (t) ptc-typical temperature characteristic 0 500 1000 1500 2000 2500 3000 25 50 75 100 125 150 t (c) r() miniskiip is a trademark of semikron. semikron is a trademark. tyco is a trademark. copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn page14 copyright by vincotech revision:1

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