smd type 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter 1. source 2. drain 3. gate 1 2 3 1gate 2drain 3source 2SK2159 features capable of drive gate with 1.5 v small r ds(on) r ds(on) =0.7 max. @v gs =1.5v,i d =0.1a r ds(on) =0.3 max. @v gs =4.0v,i d =1.0a absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v gate to source voltage v gss 14 v i d 2.0 a i dp * 4.0 a power dissipation p d 2.0 w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10ms,duty cycle 50% drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =60v,v gs =0 1.0 a gate leakage current i gss v gs = 14v,v ds =0 10 a gate to source cutoff voltage v gs(off) v ds =10v,i d =1ma 0.5 0.9 1.1 v forward transfer admittance y fs v ds =10v,i d =1.0a 0.4 s v gs =1.5v,i d =0.1a 0.55 0.7 v gs =2.5v,i d =1.0a 0.27 0.5 v gs =4.0v,i d =1.0a 0.22 0.3 input capacitance c iss 319 pf output capacitance c oss 109 pf reverse transfer capacitance c rss 22 pf turn-on delay time t d(on) 38 ns rise time tr 128 ns turn-off delay time t d(off) 237 ns fall time tf 130 ns v ds =10v,v gs =0,f=1mhz i d =1.0a,v gs(on) =3v,r l =25 ,r g =10 ,v dd =25v drain to source on-state resistance r ds(on) marking marking nw smd type smd type smd type ic smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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