inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor BUX33 description collector-emitter sustaining voltage- : v ceo(sus) = 400v(min.) high switching speed applications converters inverters switching regulators motor controls absolute maximum ratings(t a =25 ) symbol parameter max unit v cev collector-emitter voltage v be = 1.5v 800 v v cer collector-emitter voltage r be = 10 800 v v cex collector-emitter voltage v be = -1.5v 450 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 8 v i c collector current-continuous 12 a i cm collector current-peak 15 a i b base current 4 a p c collector power dissipation @t c =25 150 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.0 /w free datasheet http:///
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BUX33 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0 400 v v ce( sat )-1 collector-emitter saturation voltage i c = 8a; i b = 2a 1.0 v v ce( sat )-2 collector-emitter saturation voltage i c = 12a; i b = 3a 4.0 v v be( sat ) base-emitter saturation voltage i c = 8a; i b = 2a 1.3 v i cex collector cutoff current v ce =800v;v be = -1.5v v ce =800v;v be = -1.5v;t c = 100 0.1 1.0 ma i ebo emitter cutoff current v eb = 8v; i c = 0 2.0 ma h fe dc current gain i c = 8a; v ce = 3v 6 40 f t current-gainbandwidth product i c = 0.2a; v ce = 10v 15 60 mhz switching times t d delay time i c = 8a; i b1 = 2a; v cc = 240v, t p = 20 s 0.1 s t r rise time 0.45 s t s storage time i c = 8a; i b2 = -2a; v cc = 240v, t p = 20 s 3.0 s t f fall time 0.4 s free datasheet http:///
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