v rrm = 100 v - 1600 v i f = 70 a features ? high surge capability do-5 package ? types up to 1600 v v rrm note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol unit repetitive peak reverse voltage v rrm v rms reverse voltage v rms v dc blocking voltage v dc v silicon standard recover y diode maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) 800 1200 840 1200 1000 800 conditions s70k (r) s70m (r) s70q (r) 1000 700 560 s70k thru S70QR 2. reverse polarity (r): stud is anode. dc blocking voltage v dc v continuous forward current i f a operating temperature t j c storage temperature t stg c parameter symbol unit diode forward voltage a ma thermal characteristics thermal resistance, junction - case r thjc c/w 0.65 70 70 70 1250 1250 1250 1200 1.1 1.1 -65 to 180 9 1000 800 10 s70q (r) 1.1 10 10 -65 to 180 -65 to 180 -65 to 180 -65 to 180 -65 to 180 s70k (r) s70m (r) 0.65 0.65 v r = 100 v, t j = 180 c 99 v t c = 25 c, t p = 8.3 ms t c 140 c conditions v r = 100 v, t j = 25 c i f = 70 a, t j = 25 c reverse current i r v f electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm a www. genesicsemi.com/index.php/silicon-products/standard-rec 1
s70k thru S70QR www. genesicsemi.com/index.php/silicon-products/standard-rec 2
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