inchange semiconductor isc product specification isc silicon pnp power transistors 2N5611 description dc current gain- : h fe = 30-90@i c = -2.5a wide area of safe operation collector-emitter sustaining voltage- : v ceo(sus) = -100v(min) complement to type 2n5612 applications designed for use in high frequency power amplifiers, audio power amplifier and drivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -120 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -6 v i c collector current-continuous -5 a p c collector power dissipation@t c =25 25 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 6.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistors 2N5611 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = -50ma ; i b = 0 -100 v v ce (sat) collector-emitter saturation voltage i c = -2.5a; i b = -0.25a b -0.75 v v be (sat) base-emitter saturation voltage i c = -2.5a; i b = -0.25a b -1.45 v i ceo collector cutoff current v ce = -100v; i b = 0 -1.0 ma i cbo collector cutoff current v cb = -120v; i e = 0 -0.1 ma i ebo emitter cutoff current v eb = -6v; i c = 0 -0.1 ma h fe dc current gain i c = -2.5a ; v ce = -5v 30 90 f t current-gain?bandwidth product i c = -0.5a ; v ce = -10v 50 mhz isc website www.iscsemi.cn 2
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