j. c/ , one. 20 stern ave. springfield, new jersey 07081 u.s.a. d44vh series 30-80 volts 15 amp, 83 watts telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 very high speed npn power transistors complementary to the d45vh series thed44vh is an npn power transistor especially designed for use in switching circuits such as switching regulators, high- frequency inverters/converters and other applications where very fast switching and low-saturation voltages are necessary. this device complements the d45vh pnp power transistor and is characterized with performance information which relates directly to switching. features: ? fast switching ts t, 700 ns resistive 200 ns ? low vce(sat) < 0.4v @ ic = 8a case style to-220ab dimensions are in inches and (millimeters) case temperature reference point .03310.841 oz7'069' .05511 391 045(1 14) iw k-.'0512.671 p ^j .095(241] fcl- 21015.331 .08110.63) type 'u-i20 ab term 1 case tchm 2 collector term 3 fk'i'ifr iae collector nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
maximum ratings (ta = 25 c) (unless otherwise specified) rating collector-emitter voltage collector-emitter voltage collector-emitter voltage emitter base voltage collector current ? continuous ? peak (1) base current ? continuous ? peak (1) total power dissipation @ tc = 25 c @tc = 100c derate above 25 c operating and storage junction temperature range symbol vceo(sus) vcex vcev veb ic i cm ib ibm pd tj, tstg d44vh1 30 40 50 d44vh4 45 55 65 d44vh7 60 70 80 7 15 20 5 10 83 33 .67 -55 to -150 D44VH10 80 90 100 unit v v v v a a watts w/c c thermal characteristics characteristics thermal resistance, junction to case thermal resistance, junction to ambient maximum lead temperature for soldering purposes: 1/8" from case for 5 seconds symbol r0jc r0ja tl max 1.5 74 235 unit c/w c/w c (1) pulse measurement condition pw ^ 60 ms, see figure 14 electrical characteristics (tc = 25 c) (unless otherwise specified) | symbol characteristics min max unit | off characteristics*1' collector-emitter sustaining voltage'1' (ic = 100ma, ib = 0) d44vh1 d44vh4 d44vh7 D44VH10 collector-emitter voltage<2> (lc = 1a, vclamp = rated vcex, tc = 100c) d44vh1 d44vh4 d44vh7 D44VH10 collector cutoff current (vcev = rated value, vbe(off) = 4.0v) (vcev = rated value, vgfjoff) = 4-v, tc = 100c) collector cutoff current (vce = rated vcev, rbe = 50 fl, tc = 100c) emitter cutoff current (veb = 7v, ig = 0) vceo(sus) vcex icev icer iebo 30 45 60 80 40 55 65 90 ? ? ? ? ? 10 100 100 10 v v 0a //a
second breakdown second breakdown with base forward biased second breakdown with base reverse biased fbsoa rbsoa see figure 7 see figure 8 on characteristics'1' dc current gain (lc = 2 a, vce = w) (ic = 4a, vce = 1v) collector-emitter saturation voltage oc = 8a, ib = 0.4a) (ic = 8a, ib = 0.4a, tc = 100c) (lc = 15a, ib = 3.0a, tc = 100c) base-emitter saturation voltage (lc = 8a, ib=0.4a) (lc = 8a, ib = 0.4a, tc - 100c) hfe vce(sat) vbe(sat) 35 20 ? - ? 0.4 0.5 0.8 1.2 1.1 ? v v dynamic characteristics switching characteristics typical current-gain ? bandwidth product (ic = 0.1a, vce = 10v, ftest = 1 mhz) output capacitance (vcb = 10v, ie = 0, ftest = 1 mhz) ft cob 50 120 mhz pf maximum resistive load (see figure 16 for test circuit) delay time rise time storage time fall time vri~ = 20v \ ? 8a ib1 = 'b2 = 0.8a tn = 25 yusec inductive load, clamped (see figure 15 for test circuit) storage time fall time storage time fall time vcc = 20v, ic = 8a vclamp = rated vcex ib1 = 0.8a. vbe(off) =-5v l ~ 200 //h tc td tr ts tf ts tf 25c 50 250 700 200 800 180 100c ? ? ? ? ? 400 nsec nsec nsec nsec nsec nsec typical ts tf 283 130 370 150 nsec nsec (1) pulse duration = 300 //sec, duty factor? 2%. (2) see figure 15 for test circuit.
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