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esmt/emp emp8733 elite semiconductor memory technology inc./ elite micropower inc. publication date : sep. 2010 revision : 2.2 1/11 fast ultra high-psrr, low-noise 300ma cmos ldo in sot-23 package general description the emp8733 features ultra-high power supply rejection ratio, low output voltage noise, low dropout voltage, low quiescent current and fast transient response. it guarantees delivery of 300ma output current and supports preset output voltages ranging from 0.8v to 4.5v with 0.05v increment. based on its low quiescent current consumption, the emp8733 is ideal for battery-powered applications. the high power supply rejection ratio of the emp8733 holds well for low input voltages typically encountered in battery-operated systems. the regulator is stable with small ceramic capacitive loads (1f typical). the emp8733 is available in miniature 3-pin sot-23-3 package. emp products are halogen free and rohs compliant. features ? 300ma guaranteed output current ? 62db typical psrr at 1khz ? 110v rms output voltage noise (10hz to 100khz) ? 290mv typical dropout at 300ma ? 57a typical quiescent current ? fast line and load transient response ? 2.2v to 5.5v input range ? stable with small ceramic output capacitors ? over temperature and over current protection ? 2% output voltage tolerance applications ? wireless handsets ? pcmcia cards ? dsp core power ? hand-held instruments ? battery-powered systems ? portable information appliances typical application * use 2.2 f for v out < 1.2v
esmt/emp emp8733 elite semiconductor memory technology inc./ elite micropower inc. publication date : sep. 2010 revision : 2.2 2/11 connection diagram order information sot-23-3(top view) emp8733-xxvb03grr xx output voltag vb03 sot-23-3 package grr rohs & halogen free rating: -40 to 85c package in tape & reel pin functions name no. function gnd 1 ground pin . vout 2 output voltage feedback . vin 3 supply voltage input . require a minimum input capacitor of close to 1f to ensure stability and sufficient decoupling from the ground pin. order, mark & packing information vout marking product id packing 1.2 emp8733-12vb03grr 3k units tape & reel 1.5 emp8733-15vb03grr 3k units tape & reel 1.8 emp8733-18vb03grr 3k units tape & reel 2.5 emp8733-25vb03grr 3k units tape & reel 2.8 emp8733-28vb03grr 3k units tape & reel 3.0 EMP8733-30VB03GRR 3k units tape & reel 3.3 emp8733-33vb03grr 3k units tape & reel
esmt/emp emp8733 elite semiconductor memory technology inc./ elite micropower inc. publication date : sep. 2010 revision : 2.2 3/11 functional block diagram
esmt/emp emp8733 elite semiconductor memory technology inc./ elite micropower inc. publication date : sep. 2010 revision : 2.2 4/11 absolute maximum ratings (notes 1, 2) vin, vout -0.3v to 6.5v storage temperature range -65c to160c junction temperature (t j ) 150c lead temperature (10 sec.) 240c esd rating human body model 2kv mm 200v thermal resistance ( ja ) 3-pin sot-23-3 250c/w operating ratings (note 1, 2) temperature range -40c to 85c supply voltage 2.2v to 5.5v electrical characteristics unless otherwise specified, all limits guaranteed for v in = v out +1v (note 3), c in = c out = 2.2f, t a = 25c. boldface limits apply for the operating temperature extremes: -40c and 85c. symbol parameter conditions min typ max units v in input voltage 2.2 5.5 v v out output voltage 0.8 4.5 v -2 +2 v otl output voltage tolerance 1ma i out 300ma v out (nom) +1v vin 5.5v (note 3) -3 +3 % of v out (nom) i out maximum output current average dc current rating 300 ma i limit output current limit 300 450 ma i out = 0ma 57 i q supply current i out = 300ma 130 a i out = 100ma 90 v do dropout voltage (note4) i out = 300ma 290 mv line regulation i out = 1ma, (v out + 1v) v in 5.5v (note 3) -0.1 0.01 0.1 %/v v out load regulation 1ma i out 300ma 0.0008 %/ma e n output voltage noise v out =2.5v, i out = 10ma, 10hz f 100khz 110 v rms thermal shutdown temperature 165 t sd thermal shutdown hysteresis 35 note 1: absolute maximum ratings indicate limits beyond which damage may occur. electrical specifications do not apply when operating the device outside of its rated operating conditions. note 2: all voltages are with respect to the potential at the ground pin. note 3: condition does not apply to input voltages below 2.2v since this is the minimum input operating voltage. note 4: dropout voltage is measured by reducing v in until v out drops 100mv from its nominal value at v in -v out = 1v. dropout voltage does not apply to the regulator versions with v out less than 2.2v.
esmt/emp emp8733 elite semiconductor memory technology inc./ elite micropower inc. publication date : sep. 2010 revision : 2.2 5/11 typical performance characteristics unless otherwise specified, vin = v out (nom) + 1v, c in = c out = 1.0f, t a = 25c. psrr (db) psrr (db) psrr vs. frequency psrr vs. frequency psrr (db) psrr vs. frequency psrr (db) psrr vs. frequency frequency (hz) frequency (hz) frequency (hz) frequency (hz) psrr (db) psrr vs. frequency frequency (hz) psrr (db) psrr vs. frequency frequency (hz)
esmt/emp emp8733 elite semiconductor memory technology inc./ elite micropower inc. publication date : sep. 2010 revision : 2.2 6/11 typical performance characteristics unless otherwise specified, vin = v out (nom) + 1v, c in = c out = 2.2f, t a = 25c. (continued) dro p out volta g e vs. load current load current (ma) dropout voltage (mv) ground current ( a) ground current vs. load current load current (ma) v out (v) load regulation load current (ma) ground current ( a) ground current vs. load current load current (ma) ground current ( a) ground current vs. vin vin (v) ground current ( a) ground current vs. vin vin (v)
esmt/emp emp8733 elite semiconductor memory technology inc./ elite micropower inc. publication date : sep. 2010 revision : 2.2 7/11 typical performance characteristics unless otherwise specified, vin = v out (nom) + 1v, c in = c out = 2.2f, t a = 25c. (continued) v out (v) line regulation vin (v) load transient load transient 200 s/div 200 s/div v out 20mv/div 50ma/div v out =2.5v 50mv/div 50ma/div i out =50ma~100ma v out v out =2.5v i out =10ma~100ma v out (v) temperature stability ambient temperature ( o c) load transient 400 s/div v out 100mv/div 100ma/div v out =2.5v i out =1ma~100ma load transient 400 s/div v out 100mv/div 100ma/div v out =1.2v i out =1ma~100ma
esmt/emp emp8733 elite semiconductor memory technology inc./ elite micropower inc. publication date : sep. 2010 revision : 2.2 8/11 typical performance characteristics unless otherwise specified, vin = v out (nom) + 1v, c in = c out = 2.2f, t a = 25c. (continued) line transient vin (v), tr=tf=4us v out ( 20mv/div ) v out =1.2v, i out =100ma 400 s/div power deratin g power consumption (mw) surface tem p erature ( o c ) power on transient 2v/div 2v/div 1ms/div power off transient 2v/div 2v/div 10ms/div i out =0ma i out =0ma line transient vin (v), tr=tf=4us v out ( 10mv/div ) v out =2.5v, i out =10ma 200 s/div 4.5 3.5 line transient vin (v), tr=tf=4us v out ( 20mv/div ) v out =1.2v, i out =1ma 400 s/div 3.2 2.2 3.2 2.2
esmt/emp emp8733 elite semiconductor memory technology inc./ elite micropower inc. publication date : sep. 2010 revision : 2.2 9/11 sot-23-3 symbol dimensions millimeters dimensions inches min max min max a 1.000 1.400 0.039 0.055 a1 0.000 0.150 0.000 0.006 a2 0.900 1.250 0.035 0.049 b 0.250 0.500 0.010 0.020 c 0.080 0.220 0.003 0.009 d 2.750 3.050 0.108 0.120 e 1.500 1.700 0.059 0.067 e1 2.600 3.000 0.102 0.118 e 0.950typ 0.037typ e1 1.800 2.000 0.071 0.079 l 0.700ref 0.028ref l1 0.300 0.600 0.012 0.024 0 8 0 8
esmt/emp emp8733 elite semiconductor memory technology inc./ elite micropower inc. publication date : sep. 2010 revision : 2.2 10/11 revision history revision date description 2.0 2009.04.03 1.title 2.ending 3.order information 4.add revision history form 5. important notice. 2.1 2009.12.17 general description ? halogen free (page 1) grr definition correction (page 2) 2.2 2010.09.10 change package dimensions (page 9).
esmt/emp emp8733 elite semiconductor memory technology inc./ elite micropower inc. publication date : sep. 2010 revision : 2.2 11/11 important notice all rights reserved. no part of this document may be repr oduced or duplicated in any form or by any means without the prior permission of esmt. the contents contained in this docume nt are believed to be accurate at the time of publication. esmt assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. the information contained herein is pr esented only as a guide or examples for the application of our products. no responsibility is assumed by esmt for any infringement of patents, copyrights, or other intellect ual property rights of third parties which may result from its use. no license, either express , implied or otherwise, is granted un der any patents, copyrights or other intellectual property righ ts of esmt or others. any semiconductor devices may have in herently a certain rate of failure. to minimize risks associated with cu stomer's application, adequate design and operating safeguards against inju ry, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. if products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications.

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