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| inchange semiconductor product specification silicon pnp power transistors 2n5621 2n5623 2N5625 2n5627 description ? with to-3 package ? excellent safe operating area ? low collector saturation voltage applications ? for audio and general-purpose applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2n5621 -80 2n5623/56 25 -100 v cbo collector-base voltage 2n5627 open emitter -120 v 2n5621 -60 2n5623/56 25 -80 v ceo collector-emitter voltage 2n5627 open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a p d total power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.5 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2n5621 2n5623 2N5625 2n5627 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2n5621 -60 2n5623/5625 -80 v ceo(sus) collector-emitter sustaining voltage 2n5627 i c =-50ma ;i b =0 -100 v v cesat collector-emitter saturation voltage i c =-10a; i b =-1a -1.5 v v be base-emitter on voltage i c =-5a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =rated v cbo ; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma 2n5621/5625 70 200 h fe dc current gain 2n5623/5627 i c =-5a ; v ce =-5v 30 90 2n5621/5625 40 f t transition frequency 2n5623/5627 i c =-1a ; v ce =-12v 30 mhz inchange semiconductor product specification 3 silicon pnp power transistors 2n5621 2n5623 2N5625 2n5627 package outline fig.2 outline dimensions |
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