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| geometry process details principal device types 2n3906 cmkt3906 cmlt3906e cmpt3906 cmpt3906e cmst3906 cxt3906 czt3906 gross die per 4 inch wafer 93,826 process CP792V smal signal transistor pnp - amp/switch transistor chip process epitaxial planar die size 11 x 11 mils die thickness 7.1 mils base bonding pad area 3.7 x 3.7 mils emitter bonding pad area 3.7 x 3.7 mils top side metalization al - 30,000? back side metalization au - 18,000? backside collector r0 www.centralsemi.com r2 (13-may 2010)
process CP792V typical electrical characteristics www.centralsemi.com r2 (13-may 2010) |
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