? semiconductor components industries, llc, 2013 may, 2013 ? rev. 9 1 publication order number: bav99lt1/d bav99lt1g, SBAV99LT1G, bav99lt3g, sbav99lt3g dual series switching diode features ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ratings (each diode) rating symbol value unit reverse voltage v r 100 vdc forward current i f 215 madc peak forward surge current i fm(surge) 500 madc repetitive peak reverse voltage v rrm 70 v average rectified forward current (note 1) (averaged over any 20 ms period) i f(av) 715 ma repetitive peak forward current i frm 450 ma non ? repetitive peak forward current t = 1.0 s t = 1.0 ms t = 1.0 s i fsm 2.0 1.0 0.5 a stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature range t j , t stg ? 65 to +150 c 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in 99.5% alumina. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information case 318 sot ? 23 style 11 marking diagram 3 cathode/anode anode 1 cathode 2 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. bav99lt3g sot ? 23 (pb ? free) 10,000 / tape & reel bav99lt1g sot ? 23 (pb ? free) 3,000 / tape & reel http://onsemi.com 1 a7 m *date code orientation and/or overbar may vary depending upon manufacturing location. a7 = device code m = date code* = pb ? free package (note: microdot may be in either location) SBAV99LT1G sot ? 23 (pb ? free) 3,000 / tape & reel sbav99lt3g sot ? 23 (pb ? free) 10,000 / tape & reel
bav99lt1g, SBAV99LT1G, bav99lt3g, sbav99lt3g http://onsemi.com 2 off characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min max unit reverse breakdown voltage, (i (br) = 100 a) v (br) 100 ? vdc reverse voltage leakage current, (v r = 100 vdc) (v r = 25 vdc, t j = 150 c) (v r = 70 vdc, t j = 150 c) i r ? ? ? 2.5 30 50 adc diode capacitance, (v r = 0, f = 1.0 mhz) c d ? 1.5 pf forward voltage, (i f = 1.0 madc) (i f = 10 madc) (i f = 50 madc) (i f = 150 madc) v f ? ? ? ? 715 855 1000 1250 mvdc reverse recovery time, (i f = i r = 10 madc, i r(rec) = 1.0 madc) r l = 100 t rr ? 6.0 ns forward recovery voltage, (i f = 10 ma, t r = 20 ns) v fr ? 1.75 v curves applicable to each diode v f , forward voltage (v) v r , reverse voltage (v) figure 1. forward voltage figure 2. leakage current figure 3. capacitance 0.1 1 10 100 1000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t a = 85 c t a = 55 c t a = 25 c t a = ? 40 c t a = ? 55 c t a = 150 c i f , forward current (ma) t a = 125 c 0.001 0.01 0.1 1.0 10 100 0 10203040506070 t a = 85 c t a = 55 c t a = 125 c t a = 150 c t a = 25 c i r , reverse current ( a) 0.45 0.47 0.49 0.51 0.53 0.55 0.57 0.59 0.61 012345678 v r , reverse voltage (v) c d , diode capacitance (pf) 0 1.1 1.2
bav99lt1g, SBAV99LT1G, bav99lt3g, sbav99lt3g http://onsemi.com 3 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 style 11: pin 1. anode 2. cathode 3. cathode ? anode on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bav99lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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