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1. product profile 1.1 general description the BGA3012 mmic is a wideb and amplifier with internal biasing. it is designed specifically for high linearity catv line ex tenders and drop amplifiers over a frequency range of 5 mhz to 1006 mhz. the lna is ho used in a lead free 3-pin sot89 package. 1.2 features and benefits 1.3 applications ? general wideband amplifiers. ? catv return amplifier; frequency ranges of 5 mhz to 300 mhz. ? catv infrastructure network driver in op tical nodes (fttx), distribution amplifiers, trunk amplifiers and line extenders in the frequency range from 40 mhz to 1006 mhz. ? the product is ideally suited for applications as drop amplifiers in catv distribution systems such as ftth 1.4 quick reference data [1] the fundamental frequencies (f 1 ) and (f 2 ) lay between 40 mhz and 1006 mhz. the intermodulation product (im3) is 2 ? f 2 ? f 1 , where f 2 =f 1 ? 6 mhz. input power p i = ? 20 dbm. [2] the fundamental frequencies (f 1 ) and (f 2 ) lay between 40 mhz and 1006 mhz. the intermodulation product (im2) is ? f 2 ? f 1 ? , with 40 mhz < ? f 1 -f 2 ? < 1006 mhz. input power p i = ? 20 dbm. BGA3012 1 ghz 12 db gain wideband amplifier mmic rev. 3 ? 26 september 2013 product data sheet sot89 ? internally biased ? noise figure of 3.1 db ? flat gain ? 75 ? input and output impedance ? high linearity with an ip3 o of 40 dbm and an ip2 o of 60 dbm ? operating from 5 v to 8 v supply table 1. quick reference data bandwidth 40 mhz to 1006 mhz; t amb =25 ? c; typical values at v cc = 8 v; z s =z l =75 ? ; r1 = 100 ? ; r2 = 300 ? . symbol parameter conditions min typ max unit v cc supply voltage rf input ac coupled 7.6 8 8.4 v i cc(tot) total supply current - 110 125 ma t amb ambient temperature ? 40 - +85 ? c nf noise figure f = 500 mhz - 3.1 3.6 db p l(1db) output power at 1 db gain compression 21.5 23 - dbm ip3 o output third-order intercept point [1] 36 40 - dbm ip2 o output second-order intercept point [2] -60- dbm
BGA3012 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 26 september 2013 2 of 15 nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic 2. pinning information [1] this pin is dc-coupled and requires an external dc-blocking capacitor. [2] the center metal base of the sot89 also f unctions as heatsink for the power amplifier. 3. ordering information 4. marking 5. limiting values table 2. pinning pin description simplified outline graphic symbol 1 rf_out and biasing [1] 2g n d [2] 3r f _ i n [1] 321 sym130 2 1 3 table 3. ordering information type number package name description version BGA3012 - plastic surface-mount ed package; exposed die pad for good heat transfer; 3 leads sot89 om7858 evb 1 ghz 12 db gain wideband amplifier application - om7862 evb 5 mhz to 300 mhz 12 db reverse amplifier application - om7866 evb 40 mhz to 1006 mhz push-pull amplifier application - table 4. marking codes type number marking code description BGA3012 *6w * = w : made in china table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage rf input ac coupled ? 0.6 +15 v p i input power single tone - 20 dbm t stg storage temperature ? 65 +150 ?c t j junction temperature - 150 ?c t amb ambient temperature ? 40 +85 ?c v esd electrostatic discharge voltage human body model (hbm); according jedec standard 22-a114e 2- kv charged device model (cdm); according jedec standard 22-c101b 2- kv
BGA3012 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 26 september 2013 3 of 15 nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic 6. thermal characteristics 7. characteristics 7.1 forward application [1] the fundamental frequencies (f 1 ) and (f 2 ) lay between 40 mhz and 1006 mhz. the intermodulation product (im3) is 2 ? f 2 ? f 1 , where f 2 =f 1 ? 6 mhz. input power p i = ? 20 dbm. [2] the fundamental frequencies (f 1 ) and (f 2 ) lay between 40 mhz and 1006 mhz. the intermodulation product (im2) is ? f 2 ? f 1 ? , with 40 mhz < ? f 1 -f 2 ? < 1006 mhz. input power p i = ? 20 dbm. [3] measured with 132 ntsc channels v o = 30 dbmv. table 6. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 40 k/w table 7. characteristics at v cc = 8 v bandwidth 40 mhz to 1006 mhz; t amb = 25 ? c; typical values at v cc = 8 v; z s =z l =75 ? ; r1 = 100 ? ; r2 = 300 ? . symbol parameter conditions min typ max unit v cc supply voltage rf input ac coupled 7.6 8 8.4 v i cc(tot) total supply current - 110 125 ma ?s 21 ? 2 insertion power gain 11 12 13 db sl sl slope straight line - 0.5 - db fl flatness of frequency response - 0.5 - db nf noise figure f = 50 mhz - 3.0 3.5 db f = 500 mhz - 3.1 3.6 db f = 1000 mhz - 3.4 3.9 db rl in input return loss f = 50 mhz - 22 - db f = 500 mhz - 27 - db f = 1000 mhz - 29 - db rl out output return loss f = 50 mhz - 21 - db f = 500 mhz - 22 - db f = 1000 mhz - 15 - db p l(1db) output power at 1 db gain compression 21.5 23 - dbm ip3 o output third-order intercept point [1] 36 40 - dbm ip2 o output second-order intercept point [2] -60-dbm ctb composite triple beat [3] - ? 75 - dbc cso composite second-order distortion [3] - ? 60 - dbc
BGA3012 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 26 september 2013 4 of 15 nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic [1] the fundamental frequencies (f 1 ) and (f 2 ) lay between 40 mhz and 1006 mhz. the intermodulation product (im3) is 2 ? f 2 ? f 1 , where f 2 =f 1 ? 6 mhz. input power p i = ? 20 dbm. [2] the fundamental frequencies (f 1 ) and (f 2 ) lay between 40 mhz and 1006 mhz. the intermodulation product (im2) is ? f 2 ? f 1 ? , with 40 mhz < ? f 1 -f 2 ? < 1006 mhz. input power p i = ? 20 dbm. [3] measured with 132 ntsc channels v o = 30 dbmv. table 8. characteristics at v cc = 5 v bandwidth 40 mhz to 1006 mhz; t amb = 25 ? c; typical values at v cc = 5 v; z s =z l =75 ? ; r1 = 100 ? ; r2 = 300 ? . symbol parameter conditions min typ max unit v cc supply voltage rf input ac coupled 4.75 5 5.25 v i cc(tot) total supply current - 70 85 ma ?s 21 ? 2 insertion power gain - 12 - db sl sl slope straight line - 0.5 - db fl flatness of frequency response - 0.5 - db nf noise figure f = 50 mhz - 2.9 - db f = 500 mhz - 2.9 - db f = 1000 mhz - 3.2 - db rl in input return loss f = 50 mhz - 22 - db f = 500 mhz - 25 - db f = 1000 mhz - 25 - db rl out output return loss f = 50 mhz - 22 - db f = 500 mhz - 22 - db f = 1000 mhz - 12 - db p l(1db) output power at 1 db gain compression -18-dbm ip3 o output third-order intercept point [1] -36-dbm ip2 o output second-order intercept point [2] -54-dbm ctb composite triple beat [3] - ? 70 - dbc cso composite second-order distortion [3] - ? 54 - dbc
BGA3012 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 26 september 2013 5 of 15 nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic 7.2 return application [1] the fundamental frequencies (f 1 ) and (f 2 ) lay between 5 mhz and 300 mhz. the intermodulation product (im3) is 2 ? f 2 ? f 1 , where f 2 =f 1 ? 6 mhz. input power p i = ? 20 dbm. [2] the fundamental frequencies (f 1 ) and (f 2 ) lay between 5 mhz and 300 mhz. the intermodulation product (im2) is ? f 2 ? f 1 ? , with 40 mhz < ? f 1 -f 2 ? < 300 mhz. input power p i = ? 20 dbm. table 9. characteristics at v cc = 8 v bandwidth 5 mhz to 300 mhz; t amb =25 ? c; typical values at v cc = 8 v; z s =z l =75 ? ; r1 = 100 ? ; r2 = 300 ? . symbol parameter conditions min typ max unit v cc supply voltage rf input ac coupled 7.6 8 8.4 v i cc(tot) total supply current - 110 125 ma ?s 21 ? 2 insertion power gain - 12 - db sl sl slope straight line - 0.5 - db fl flatness of frequency response - 0.5 - db nf noise figure f = 50 mhz - 3.0 - db rl in input return loss f = 5 mhz - 18.5 - db f = 100 mhz - 18.5 - db f = 200 mhz - 18.5 - db f = 300 mhz - 18.5 - db rl out output return loss f = 5 mhz - 18.5 - db f = 100 mhz - 18.5 - db f = 200 mhz - 18.5 - db f = 300 mhz - 18.5 - db p l(1db) output power at 1 db gain compression -23- dbm ip3 o output third-order intercept point [1] -40- dbm ip2 o output second-order intercept point [2] -60- dbm
BGA3012 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 26 september 2013 6 of 15 nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic [1] the fundamental frequencies (f 1 ) and (f 2 ) lay between 5 mhz and 300 mhz. the intermodulation product (im3) is 2 ? f 2 ? f 1 , where f 2 =f 1 ? 6 mhz. input power p i = ? 20 dbm. [2] the fundamental frequencies (f 1 ) and (f 2 ) lay between 5 mhz and 300 mhz. the intermodulation product (im2) is ? f 2 ? f 1 ? , with 40 mhz < ? f 1 -f 2 ? < 300 mhz. input power p i = ? 20 dbm. table 10. characteristics at v cc = 5 v bandwidth 5 mhz to 300 mhz; t amb =25 ? c; typical values at v cc = 5 v; z s =z l =75 ? ; r1 = 100 ? ; r2 = 300 ? . symbol parameter conditions min typ max unit v cc supply voltage rf input ac coupled 4.75 5 5.25 v i cc(tot) total supply current - 70 85 ma ?s 21 ? 2 insertion power gain - 12 - db sl sl slope straight line - 0.5 - db fl flatness of frequency response - 0.5 - db nf noise figure f = 50 mhz - 2.9 - db rl in input return loss f = 5 mhz - 18.5 - db f = 100 mhz - 18.5 - db f = 200 mhz - 18.5 - db f = 300 mhz - 18.5 - db rl out output return loss f = 5 mhz - 18.5 - db f = 100 mhz - 18.5 - db f = 200 mhz - 18.5 - db f = 300 mhz - 18.5 - db p l(1db) output power at 1 db gain compression -17-dbm ip3 o output third-order intercept point [1] -40-dbm ip2 o output second-order intercept point [2] -55-dbm
BGA3012 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 26 september 2013 7 of 15 nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic 8. application information 8.1 forward applicati on 40 mhz to 1006 mhz the BGA3012 can be used in other applications. please contact your local sales representative for more information. applicat ion notes are available on the nxp website. 8.1.1 forward application circuit all control and supply lines must be decoupl ed properly. the decoupling capacitors must be placed as close to the device as possible. components are listed in table 11 . fig 1. BGA3012 application circuit ddd 5)brxw & & / 5 9 && - 5 / / & & & / 8 5)blq - -
BGA3012 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 26 september 2013 8 of 15 nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic 8.1.2 forward application circuit board layout pcb (printed-circuit board) material = fr4; thickness = 1.5 mm; size = 40 mm ? 40 mm; ? r = 4.6; thickness of copper layer = 35 ? m; components are listed in table 11 . fig 2. BGA3012 applicatio n circuit board layout ddd 6hplfrqgxfwruv %*$[[(9% yhuvlrq 1ryhpehu 0+]0+] 3&%6shf)5(u 5)od\hu pp2kp 5),1 5)287 & - *1' 9 && *1' / & 5 5 / / & - & & / 8 - table 11. list of components see figure 1 and figure 2 . component description value size remarks c1, c2, c3, c4 capacitor 10 nf smd 0402 murata grm155r71e103ka01d or capacitor of same quality c5 capacitor 100 pf smd 0402 murata grm1555c1h101jz01d or capacitor of same quality j1, j2 f-connector 75 ? - bomar 861v509er6 or f-connector of same quality j3 header 3-way - - molex 90121-0763 or header of the same quality l1, l3 inductor 3.9 nh smd 0402 murata lqg15hs3n9s02d or inductor of same quality l2 choke - smd 0603 murata blm18hd182sn1d or choke of same quality l4 inductor 880 nh smd 1206 murata lqh31hnr88k03l or inductor of same quality r1 resistor 100 ? smd 0402 yageo rc0402fr-07100rl or resistor of same quality r2 resistor 300 ? smd 0402 yageo rc0402fr-07300rl or resistor of same quality u1 BGA3012 - - nxp
BGA3012 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 26 september 2013 9 of 15 nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic 8.2 return applicatio n 5 mhz to 300 mhz the BGA3012 can be used in other applications. please contact your local sales representative for more information. applicat ion notes are available on the nxp website. 8.2.1 return application circuit all control and supply lines must be decoupl ed properly. the decoupling capacitors must be placed as close to the device as possible. components are listed in table 11 . fig 3. BGA3012 application circuit & & 5 9 && - 5 / & & & 8 ddd 5)brxw 5)blq - -
BGA3012 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 26 september 2013 10 of 15 nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic 8.2.2 return application circuit board layout pcb (printed-circuit board) material = fr4; thickness = 1.5 mm; size = 40 mm ? 40 mm; ? r = 4.6; thickness of copper layer = 35 ? m; components are listed in table 11 . fig 4. BGA3012 applicatio n circuit board layout ddd 6hplfrqgxfwruv %*$[[(9% yhuvlrq 1ryhpehu 0+]0+] 3&%6shf)5(u 5)od\hu pp2kp 5),1 5)287 & - *1' 9 && *1' & 5 5 & & & / 8 - - table 12. list of components see figure 1 and figure 2 . component description value size remarks c1, c2, c3, c4 capacitor 10 nf smd 0402 murata grm155r71e103ka01d or capacitor of same quality c5 capacitor 100 pf smd 0402 murata grm1555c1h101jz01d or capacitor of same quality j1, j2 f-connector 75 ? - bomar 861v509er6 or f-connector of same quality j3 header 3-way - - molex 90121-0763 or header of the same quality l2 inductor 22 ? h smd 1206 murata lqh31cn220k03l or inductor of same quality r1 resistor 100 ? smd 0402 yageo rc0402fr-07100rl or resistor of same quality r2 resistor 300 ? smd 0402 yageo rc0402fr-07300rl or resistor of same quality u1 BGA3012 - - nxp
BGA3012 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 26 september 2013 11 of 15 nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic 9. package outline fig 5. package outline sot89 (sc-62) references outline version european projection issue date iec jedec jeita dimensions (mm are the original dimensions) sot89 to-243 sc-62 06-03-16 06-08-29 w m e 1 e e h e b b 0 2 4 mm scale b p3 b p2 b p1 c d l p a plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads sot89 123 unit a mm 1.6 1.4 0.48 0.35 c 0.44 0.23 d 4.6 4.4 e 2.6 2.4 h e l p 4.25 3.75 e 3.0 w 0.13 e 1 1.5 1.2 0.8 b p2 b p1 0.53 0.40 b p3 1.8 1.4
BGA3012 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 26 september 2013 12 of 15 nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic 10. abbreviations 11. revision history table 13. abbreviations acronym description catv community antenna television ftth fiber to the home fttx fiber to the ?x? lna low-noise amplifier mmic monolithic microwave integrated circuit table 14. revision history document id release date data sheet status change notice supersedes BGA3012 v.3 20130926 product data sheet - BGA3012 v.2 modifications: ? table 3 on page 2 : evaluation boards have been added. BGA3012 v.2 20130415 product data sheet - BGA3012 v.1 BGA3012 v.1 20130319 preliminary data sheet - -
BGA3012 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 26 september 2013 13 of 15 nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BGA3012 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 26 september 2013 14 of 15 nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BGA3012 1 ghz 12 db gain wideband amplifier mmic ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 26 september 2013 document identifier: BGA3012 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.1 forward application . . . . . . . . . . . . . . . . . . . . . 3 7.2 return application. . . . . . . . . . . . . . . . . . . . . . . 5 8 application information. . . . . . . . . . . . . . . . . . . 7 8.1 forward application 40 mhz to 1006 mhz . . . . 7 8.1.1 forward application circuit . . . . . . . . . . . . . . . . 7 8.1.2 forward application circuit board layout . . . . . . 8 8.2 return application 5 mhz to 300 mhz . . . . . . . 9 8.2.1 return application circuit . . . . . . . . . . . . . . . . . 9 8.2.2 return application circuit board layout . . . . . . 10 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 13 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13 contact information. . . . . . . . . . . . . . . . . . . . . 14 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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