copyright@ semipower electronic technology co., ltd. all rights reserved. july. 2013. rev. 3.0 1 /5 features high ruggedness r ds( on ) (max 1.5 ? )@v gs =10v gate charge (typical 57 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply. n - channel to - 220f mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage 900 v i d continuous drain current (@t c =25 o c) 8.0* a continuous drain current (@t c =100 o c) 5* a i dm drain current pulsed (note 1) 32 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 928 mj e ar repetitive avalanche energy (note 1) 130 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 69 w derating factor above 25 o c 0.5 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit r thjc thermal resistance, junction to case 1.8 o c/w r thcs thermal resistance, case to sink - o c/w r thja thermal resistance, junction to ambient 46.7 o c /w *. drain current is limited by junction temperature. bv dss : 900v i d : 8.0a r ds(on) : 1.5ohm SW8N90 samwin 1 2 3 order codes item sales type marking package packaging 1 sw f 8n90 SW8N90 to - 220f tube 1 2 3 1. gate 2. drain 3. source to - 220f
copyright@ semipower electronic technology co., ltd. all rights reserved. july. 2013. rev. 3.0 2 /5 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 900 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.93 v/ o c i dss drain to source leakage current v ds =900v, v gs =0v 1 ua v ds =720v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 4a 1.1 1.5 ? g fs forward transconductance v ds = 20 v, i d = 4a 9.2 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 2100 pf c oss output capacitance 160 c rss reverse transfer capacitance 30 t d(on) turn on delay time v ds =450v, i d =8.0a, r g =25 ? (note 4 5) 30 70 ns tr rising time 40 90 t d(off) turn off delay time 123 200 t f fall time 41 90 q g total gate charge v ds =720v, v gs =10v, i d =8.0a(note 4 5) 57 90 nc q gs gate - source charge 13 q gd gate - drain charge 27 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 8.0 a i sm pulsed source current 32 a v sd diode forward voltage drop. i s =8.0a, v gs =0v 1.5 v t rr reverse recovery time i s =8.0a , v gs =0v, di f / dt =100a/us 497 ns q rr reverse recovery charge 7.2 uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 29mh, i as = 8.0a, v dd = 50v, r g =25 ?, starting t j = 25 o c 3. i sd 8.0a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. SW8N90 samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. july. 2013. rev. 3.0 3 /5 fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics SW8N90 samwin fig. 6. on resistance variation vs. junction temperature fig 5. breakdown voltage variation vs. junction temperature fig. 4. on state current vs. diode forward voltage
copyright@ semipower electronic technology co., ltd. all rights reserved. july. 2013. rev. 3.0 4 /5 SW8N90 samwin fig. 7 . maximum safe operating area fig. 8 . transient thermal response curve v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 9 . gate charge test circuit & waveform fig. 10 . switching time test circuit & waveform v ds same type as dut dut v gs 2.5ma q g q gs q gd v gs charge nc 10v
copyright@ semipower electronic technology co., ltd. all rights reserved. july. 2013. rev. 3.0 5 /5 fig. 11 . unclamped inductive switching test circuit & waveform SW8N90 samwin fig. 12 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
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