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TPD1008SA 2006-10-31 1 toshiba intelligent power device silicon monolithic power mos integrated circuit TPD1008SA high-side power switch for motors, solenoids, and lamp drivers the TPD1008SA is a monolithic power ic for high-side switches. the ic has a vertical mos fet output which can be directly driven from a cmos or ttl logic circuit (e.g., an mpu). the device offers intelligent self-protection and diagnostic functions. features z a monolithic power ic with a new structure combining a control block (bi?cmos) and a vertical power mos fet ( ?mos) on a single chip z one side of load can be grounded to a high-side switch. z can directly drive a power load from a microprocessor. z built?in protection against thermal shutdown and load short circuiting z incorporates a diagnosis function that allows diagnosis output to be read externally at load short-circuiting, opening, or overtemperature. z up to ? 10v of counter-electromotive force from an l load can be applied. z low on-resistance : r ds (on) = 200m ? (max) z low operating current : i dd = 1ma (typ.) (@v dd = 12v, v in = 0v) z 5-pin to ? 220 insulated package z three standard lead configurations pin assignment note: due to its mos structure, this product is sensitive to static electricity. weight ssip5?p?1.70c : 2.1g (typ.) zip5?p?1.70l : 2.1g (typ.) zip5?p?1.70k : 2.1g (typ.)
TPD1008SA 2006-10-31 2 marking block diagram pin description pin no. symbol function 1 in input is cmos ? compatible, with pull?down resistor connected. even if the input is open, output will not accidentally turn on. 2 diag self ? diagnosis detection pin. goes low when overheating is detected or when output is short-circuited with input on (high). n ? channel open drain. 3 gnd ground pin. 4 out when the load is short-circuited and current in excess of the detection current flows to the output pin, the output automatically turns on or off. 5 v dd power pin. lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code) 1008sa tpd
TPD1008SA 2006-10-31 3 timing chart truth table input signal output signal diagnosis output state h h h l l l normal h l l l l l load short circuited h h h l h h load open h l l l l l overtemperature input signal overheating detection overcurrent detection output signal diagnosis output off current limit
TPD1008SA 2006-10-31 4 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 60 v dc v dd (1) 25 v supply voltage pulse v dd (2) 60 (rs = 1 ? , = 250ms) v dc v in (1) ? 0.5~12 v input voltage pulse v in (2) v dd (1) + 1.5 (t = 100ms) v diagnosis output voltage v diag ? 0.5~25 v output current i o internally limited a input current i in 10 ma diagnosis output current i diag 5 ma tc = 25c p d (1) 30 w power dissipation ta = 25c p d (2) 2 w operating temperature t opr ? 40~110 c junction temperature t j 150 c storage temperature t stg ? 55~150 c lead temperature/time t sol 275 (5s), 260 (10s) c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, et c.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon review ing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and in dividual reliability data (i.e. reliability test report and estimated failure rate, etc). electrical characteristics (t c = ? 40~110c, v dd = 8~18v) characteristics symbol test circuit test condition min typ. max unit operating supply voltage v dd (opr) D D 5 12 18 v supply current i dd D v dd = 12v, v in = 0v D 1 5 ma v ih D v dd = 12v, i o = 2a 3.5 D D v input voltage v il D v dd = 12v, i o = 1.2ma D D 1.5 v i in (1) v dd = 12v, v in = 5v D 50 200 a input current i in (2) D v dd = 12v, v in = 0v ? 0.2 D 0.2 a on voltage v ds (on) D v dd = 12v, i o = 2a, t c = 25c D D 0.4 v on resistance r ds (on) D v dd = 12v, i o = 2a, t c = 25c D D 0.2 ? output leakage current i ol D v dd = 18v, v in = 0v D D 1.2 ma diagnosis output voltage ?l? level v dl D v dd = 12v, i dl = 2ma D D 0.4 v diagnosis output current ?h? level i dh D v dd = 18v, v dh = 18v D D 10 a i s (1) (note 1) 1 4 6 8 a overcurrent protection i s (2) (note 2) 2 v dd = 12v, t c = 25c 4 8 12 a temperature t s D 150 160 200 c thermal shutdown hysteresis ? t s D D D 10 D c open detection resistance r ops D v dd = 8v 1 20 100 k ? t on 10 100 D s switching time t off 3 v dd = 12v, r l = 5 ? t c = 25c 10 30 D s note 1: overcurrent detection value when load is short-circuited and v in = ?l? ?h? note 2: overcurrent detection value when load current is increased while v in = ?h?
TPD1008SA 2006-10-31 5 test circuit 1 overcurrent detection test circuit 2 overcurrent detection test circuit 3 switching time
TPD1008SA 2006-10-31 6 case temperature t c ( ) t c =25 case temperature t c ( ) t c =25 t c =25 t c =25 r ds(on) - t c i s - t c
TPD1008SA 2006-10-31 7 precaution 1. since there is no built-in protection against reverse connection of batteries, etc., provide such protection using external circuits. case temperature t c ( ) t c =25 case temperature t c ( ) t c =25 v dl - t c r ops - t c
TPD1008SA 2006-10-31 8 package dimensions weight: 2.1g (typ.)
TPD1008SA 2006-10-31 9 package dimensions weight: 2.1g (typ.)
TPD1008SA 2006-10-31 10 package dimensions weight: 2.1g (typ.)
TPD1008SA 2006-10-31 11 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? the products described in this document are subject to the foreign exchange and foreign trade laws. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eba restrictions on product use

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