, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn rf transistor BFS540 description ? low noise figure nf = 1.3 db typ. @vce = 8 v, lc = 10 ma, f = 900 mhz ? high current-gain?bandwidth product ft= 9 ghz typ. @vce = 8 v, lc = 40 ma, f = 1 ghz applications ? designed for rf wideband amplifier applications such as satellite tv systems and rf portable communication equipment with signal frequencies up to 2 ghz. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo lc pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector power dissipation @tc=25'c junction temperature storage temperature range value 20 15 2.5 120 0.5 175 -65-150 unit v v v ma w r 'c sot-323 package tl l:base a c j_ i 2-. emitter 3; collector dim a b c' d h k m mm win 0. 30 1.15 2.00 max o. so 1.35 2. ;o 0.65 1.80 0.80 0.10 120 1. 00 0. 25 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn rf transistor BFS540 electrical characteristics tc=25'c unless otherwise specified symbol icbo hfe ft cob cre 1 s2ie i 2 nf nf nf parameter collector cutoff current dc current gain current-gain?bandwidth product output capacitance feedback capacitance insertion power gain noise figure noise figure noise figure conditions vcb= 8v; ie= 0 lc= 40ma ; vce= 8v lc= 40ma ; vce= 8v; f= 1ghz le=0;vcb=8v;f=1mhz lc=0;vcb=8v;f=1mhz lc= 40ma ; vce= 8v; f= 900mhz lc= 10ma ; vce= 8v; f= 900mhz lc= 40ma ; vce= 8v; f= 900mhz lo=10ma; vce= 8v; f= 2ghz min 60 12 typ. g 0.9 0.6 13 1.3 1.9 2.1 max 0.05 250 1.8 2.4 unit ua ghz pf pf db db db db 40c =tot 30c :oc 10c \ \ \e 1 \v 5c 1dd 153tc.:ci2do power derating curve 2co hfe "5d ??cd /ce = 9 v: t = 25 1ct2 10-' 1 "c > dc current gain as a function of collector current
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