? 2008 ixys corporation, all rights reserved ds99950(06/08) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 100 a 3.0 5.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss 5 a v gs = 0v t j = 125 c 50 a r ds(on) v gs = 10v, i d = 3.5a, note 1 1.1 polar tm power mosfet (electrically isolated tab) n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25c to 150c 600 v v dgr t j = 25c to 150c, r gs = 1 m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 4 a i dm t c = 25 c, pulse width limited by t jm 14 a i a t c = 25 c 7 a e as t c = 25 c 400 mj dv/dt i s i dm , v dd v dss , t j = 150 c 10 v/ns p d t c = 25 c 41 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 2.5 g g = gate d = drain s = source features plastic overmolded tab for electrical isolation international standard package avanlanche rated low package inductance - easy to drive and to protect advantages easy to mount space savings applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor drives uninterruptible power supplies high speed power switching applications overmolded to-220 (i xtp...m ) outline g d s isolated tab v dss = 600v i d25 = 4a r ds(on) 1.1 ixta7n60pm IXTP7N60PM preliminary technical information
ixta7n60pm IXTP7N60PM ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 3.5a, note 1 4 7 s c iss 1180 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 110 pf c rss 11 pf t d(on) resistive swithcing times 20 ns t r v gs = 10v, v ds = 0.5 v dss , i d = 7a 27 ns t d(off) r g = 18 (external) 65 ns t f 26 ns q g(on) 20 nc q gs v gs = 10v, v ds = 0.5 v dss , i d = 3.5a 7 nc q gd 7 nc r thjc 3.0 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 7 a i sm repetitive, pulse width limited by t jm 28 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 500 ns notes:1. pulse test, t 300 s; duty cycle, d 2 %. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 12 3 isolated to-220 (i xtp...m ) i f = 7a, -di/dt = 100a/ s, v r = 100v, v gs = 0v preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2008 ixys corporation, all rights reserved ixta7n60pm IXTP7N60PM fig. 2. extended output characteristics @ 25 o c 0 2 4 6 8 10 12 14 0 3 6 9 12 15 18 21 24 27 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 3. output characteristics @ 125 o c 0 1 2 3 4 5 6 7 0246810121416 v d s - volts i d - amperes 5v v gs = 10v 7v 6v fig. 1. output characteristics @ 25 o c 0 1 2 3 4 5 6 7 012345678 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on ) normalized to 0.5 i d25 v alue vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 7a i d = 3.5a v gs = 10v fig. 5. r ds(on) normalized to 0.5 i d25 value vs. i d 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 02468101214 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v fig. 6. drain current vs. case te mpe rature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixta7n60pm IXTP7N60PM ixys reserves the right to change limits, test conditions, and dimensions. fig. 11. capacitance 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0246810121416182022 q g - nanocoulombs v g s - volts v ds = 300v i d = 3.5a i g = 10ma fig. 7. input admittance 0 1 2 3 4 5 6 7 8 9 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v g s - volts i d - amperes t j =125 o c 25 o c - 40 o c fig. 8. transconductance 0 1 2 3 4 5 6 7 8 9 10 11 12 012345678910 i d - amperes g f s - siemens t j = - 40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 2 4 6 8 10 12 14 16 18 20 0.4 0.5 0.6 0.7 0.8 0.9 1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z ( t h ) j c - o c / w ixys ref: t_7n60p(37)06-17-08-d
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