? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 750 ma i dm t c = 25 c, pulse width limited by t jm 3a i a t c = 25 c1a e as t c = 25 c 100 mj dv/dt i s i dm , v dd v dss , t j = 150 c 3 v/ns p d t c = 25 c40w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 1.13 / 10 nm/lb.in. weight to-251 0.40 g to-252 0.35 g ds100102(01/09) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss 25 a v gs = 0v t j = 125 c 500 a r ds(on) v gs = 10v, i d = 375ma, note 1 17 high voltage power mosfet n-channel enhancement mode avalanche rated ixtu05n100 IXTY05N100 v dss = 1000v i d25 = 750ma r ds(on) 17 features z international standard packages z fast switching times z avalanche rated z rugged polysilicon gate cell structure z extended fbsoa applications z switch-mode and resonant-mode power supplies z flyback inverters z dc choppers advantages z high power density z space savings g = gate d = drain s = source tab = drain to-252 d (tab) s g to-251 d s g d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixtu05n100 IXTY05N100 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 1a r g = 47 (external) to-252 (ixty) outline pins: 1 - gate 2,4 - drain 3 - source dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 to-251 (ixtu) outline 1. gate 2.drain 3. source 4. drain dim. millimeter inches min. max. min. max. a 2.19 2.38 .086 .094 a1 0.89 1.14 0.35 .045 b 0.64 0.89 .025 .035 b1 0.76 1.14 .030 .045 b2 5.21 5.46 .205 .215 c 0.46 0.58 .018 .023 c1 0.46 0.58 .018 .023 d 5.97 6.22 .235 .245 e 6.35 6.73 .250 .265 e 2.28 bsc .090 bsc e1 4.57 bsc .180 bsc h 17.02 17.78 .670 .700 l 8.89 9.65 .350 .380 l1 1.91 2.28 .075 .090 l2 0.89 1.27 .035 .050 i f = i s , -di/dt = 100a/ s v r = 100v, v gs = 0v symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 500ma, note 1 0.55 0.93 s c iss 260 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 22 pf c rss 8 pf t d(on) 11 ns t r 19 ns t d(off) 40 ns t f 28 ns q g(on) 7.8 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 1a 1.4 nc q gd 4.1 nc r thjc 3.1 c/w r thca 110 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 750 ma i sm repetitive, pulse width limited by t jm 3 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 710 ns
? 2009 ixys corporation, all rights reserved ixtu05n100 IXTY05N100 fig. 1. output characteristics @ 25oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 1012141618202224262830 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5.5v 5v fig. 2. output characteristics @ 125oc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 2 4 6 8 1012141618202224262830 v ds - volts i d - amperes v gs = 10v 7v 6v 5v 4.5v 5.5v fig. 3. r ds(on) normalized to i d = 375ma value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 750ma i d = 375ma fig. 4. r ds(on) normalized to i d = 375ma value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixtu05n100 IXTY05N100 fig. 11. maximum transient thermal impedance 0.1 1.0 10.0 1 10 100 1000 pulse width - millisecond z (th)jc - oc / w fig. 7. transconductance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 012345678 q g - nanocoulombs v gs - volts v ds = 500v i d = 1a i g = 1ma fig. 10. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss ixys ref: t_05n100m(1tm)7-29-08
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