BAS70SL ? schottky barrier diodes ? 2007 fairchild semiconductor corporation www.fairchildsemi.com BAS70SL rev. 1.0.0 1 december 2007 BAS70SL schottky barrier diodes features ? low forward voltage drop ?fast switching ? very small and thin smd package ? profile height, 0.43mm max ? footprint, 1.0 x 0.6 mm connection diagram 2 1 2 1 sod-923 marking: ac absolute maximum ratings * t a = 25 c unless otherwise noted symbol parameter value unit v rrm maximum repetitive reverse voltage 70 v i f(av) average rectified forward current 70 ma i fsm forward surge current ( 8.3ms single half sine-wave) 100 ma p d power dissipation 227 mw t j, t stg operating junction & storage temperature range -55 to +150 c * these ratings are limiting values above which the serviceability of the diode may be impaired. the factory should be consulted on applicatio ns involving pulsed or low duty cycle operations. thermal characteristics symbol parameter value unit r ja thermal resistance, junction to ambient * 550 c/w * minimum land pad. electrical characteristics t a =25 c unless otherwise noted symbol parameter test conditions min. max. unit v r breakdown voltage i r = 100 a 70 v v f forward voltage i f = 1ma i f = 15ma 410 1000 mv mv i r reverse leakage v r = 50v 0.2 a trr reverse recovery time i f = i r = 10ma, irr= 0.1i r 8.0 ns c j junction capacitance v r = 0, f = 1.0mhz 3.0 pf
BAS70SL ? schottky barrier diodes ? 2007 fairchild semiconductor corporation www.fairchildsemi.com BAS70SL rev. 1.0.0 2 typical performance characteristics figure 1. forward current characteristics 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t j = 25 o c t j = 75 o c t j = 125 o c forward voltage drop, v f [v] forward current, i f [ma] figure 2. reverse leakage current 10 20 30 40 50 60 70 80 90 100 1 10 100 1000 10000 100000 t j =125 o c t j =25 o c reverse current, i r [na] reverse voltage, v r [v] t j =75 o c figure 3. junction capacitance 0246810 1.0 1.3 1.5 1.8 2.0 2.3 2.5 f=1mhz juntion capacitance, c j [pf] reverse voltage, v r [v] figure 4. power derating 0 25 50 75 100 125 150 0 50 100 150 200 250 300 power dissipation, [mw] ambient temperature, t a [ o c]
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