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mosfet metaloxidesemiconductorfieldeffecttransistor coolmos?ce 500vcoolmos?cepowertransistor ipx50r500ce datasheet rev.2.1 final powermanagement&multimarket
2 500vcoolmos?cepowertransistor IPP50R500CE rev.2.1,2014-06-06 final data sheet to-220 1description coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?ceseriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation whilerepresentingacostappealingalternativecomparedtostandard mosfetsintargetapplications.theresultingdevicesprovideallbenefits ofafastswitchingsjmosfetwhilenotsacrificingeaseofuse. extremelylowswitchingandconductionlossesmakeswitching applicationsevenmoreefficient,morecompact,lighterandcooler. features ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforindustrialgradeapplicationsaccordingtojedec(j-std20 andjesd22) applications pfcstages,hardswitchingpwmstagesandresonantswitchingpwm stagesfore.g.pcsilverbox,lcd&pdptvandlighting. table1keyperformanceparameters parameter value unit v ds @ t j,max 550 v r ds(on),max 0.5 w q g.typ 18.7 nc i d,pulse 24 a e oss @400v 2.02 j body diode di/dt 500 a/s type/orderingcode package marking relatedlinks IPP50R500CE pg-to 220 5r500ce see appendix a tab d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
3 500vcoolmos?cepowertransistor IPP50R500CE rev.2.1,2014-06-06 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 tab d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
4 500vcoolmos?cepowertransistor IPP50R500CE rev.2.1,2014-06-06 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 7.6 4.8 a t c = 25c t c = 100c pulsed drain current 2) i d,pulse - - 24 a t c =25c avalanche energy, single pulse e as - - 129 mj i d =2.9a; v dd = 50v avalanche energy, repetitive e ar - - 0.20 mj i d =2.9a; v dd = 50v avalanche current, repetitive i ar - - 2.9 a - mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...400v gate source voltage v gs -20 -30 - - 20 30 v static; ac (f>1 hz) power dissipation (non fullpak) to-220 p tot - - 57 w t c =25c operating and storage temperature t j , t stg -55 - 150 c - mounting torque (non fullpak) to-220 - - - 60 ncm m3 and m3.5 screws continuous diode forward current i s - - 6.6 a t c =25c diode pulse current 2) i s,pulse - - 24.0 a t c = 25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c, t cond <2 m s maximum diode commutation speed 3) di f /dt - - 500 a/ m s v ds =0...400v, i sd <= i s , t j =25c, t cond <2 m s 3thermalcharacteristics table3thermalcharacteristics(nonfullpak)to-220 values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 2.19 c/w - thermal resistance, junction - ambient r thja - - 62 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s 1) limited by t j max . maximum duty cycle d=0.75 2) pulse width t p limited by t j,max 3) v dclink =400v; v ds,peak < v (br)dss ;identicallowsideandhighsideswitchwithidentical r g tab d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
5 500vcoolmos?cepowertransistor IPP50R500CE rev.2.1,2014-06-06 final data sheet 4electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 500 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 2.50 3 3.50 v v ds = v gs , i d =0.2ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =500v, v gs =0v, t j =25c v ds =500v, v gs =0v, t j =150c gate-source leakage curent i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.45 1.18 0.50 - w v gs =13v, i d =2.3a, t j =25c v gs =13v, i d =2.3a, t j =150c gate resistance r g - 3 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 433 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 31 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 25 - pf v gs =0v, v ds =0...400v effective output capacitance, time related 2) c o(tr) - 100 - pf i d =constant, v gs =0v, v ds =0...400v turn-on delay time t d(on) - 6 - ns v dd =400v, v gs =13v, i d =2.9a, r g =3.4 w rise time t r - 5 - ns v dd =400v, v gs =13v, i d =2.9a, r g =3.4 w turn-off delay time t d(off) - 30 - ns v dd =400v, v gs =13v, i d =2.9a, r g =3.4 w fall time t f - 12 - ns v dd =400v, v gs =13v, i d =2.9a, r g =3.4 w table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 2.3 - nc v dd =400v, i d =2.9a, v gs =0to10v gate to drain charge q gd - 10 - nc v dd =400v, i d =2.9a, v gs =0to10v gate charge total q g - 18.7 - nc v dd =400v, i d =2.9a, v gs =0to10v gate plateau voltage v plateau - 5.3 - v v dd =400v, i d =2.9a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to80%v (br)dss 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to80%v (br)dss tab d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
6 500vcoolmos?cepowertransistor IPP50R500CE rev.2.1,2014-06-06 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.85 - v v gs =0v, i f =2.9a, t f =25c reverse recovery time t rr - 180 - ns v r =400v, i f =2.9a,d i f /d t =100a/s reverse recovery charge q rr - 1.2 - c v r =400v, i f =2.9a,d i f /d t =100a/s peak reverse recovery current i rrm - 12 - a v r =400v, i f =2.9a,d i f /d t =100a/s tab d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
7 500vcoolmos?cepowertransistor IPP50R500CE rev.2.1,2014-06-06 final data sheet 5electricalcharacteristicsdiagrams powerdissipation(nonfullpak) t c [c] p tot [w] 0 40 80 120 160 0 10 20 30 40 50 60 70 p tot =f( t c ) max.transientthermalimpedance(nonfullpak) t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t safeoperatingarea(nonfullpak)tj=25c v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p safeoperatingarea(nonfullpak)tj=80c v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p tab d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
8 500vcoolmos?cepowertransistor IPP50R500CE rev.2.1,2014-06-06 final data sheet typ.outputcharacteristicstj=25c v ds [v] i d [a] 0 5 10 15 20 0 5 10 15 20 25 30 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs typ.outputcharacteristicstj=125c v ds [v] i d [a] 0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 5 10 15 0.80 1.00 1.20 1.40 1.60 1.80 5 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 98% typ r ds(on) =f( t j ); i d =2.3a; v gs =13v tab d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
9 500vcoolmos?cepowertransistor IPP50R500CE rev.2.1,2014-06-06 final data sheet typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 0 5 10 15 20 25 30 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j typ.gatecharge q gate [nc] v gs [v] 0 5 10 15 20 25 0 1 2 3 4 5 6 7 8 9 10 400 v 120 v v gs =f( q gate ); i d =2.9apulsed;parameter: v dd avalancheenergy t j [c] e as [mj] 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 e as =f( t j ); i d =2.9a; v dd =50v drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -60 -20 20 60 100 140 180 440 460 480 500 520 540 560 580 v br(dss) =f( t j ); i d =1ma tab d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
10 500vcoolmos?cepowertransistor IPP50R500CE rev.2.1,2014-06-06 final data sheet typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e oss = f (v ds ) forwardcharacteristicsofreversediode v sd [v] i f [a] 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 10 2 125 c 25 c i f =f( v sd );parameter: t j tab d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
11 500vcoolmos?cepowertransistor IPP50R500CE rev.2.1,2014-06-06 final data sheet 6testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload tab d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
12 500vcoolmos?cepowertransistor IPP50R500CE rev.2.1,2014-06-06 final data sheet 7packageoutlines figure1outlinepg-to220,dimensionsinmm/inches tab d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
13 500vcoolmos?cepowertransistor IPP50R500CE rev.2.1,2014-06-06 final data sheet 8appendixa table11relatedlinks ? ifxcoolmoswebpage: www.infineon.com ? ifxdesigntools: www.infineon.com tab d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
14 500vcoolmos?cepowertransistor IPP50R500CE rev.2.1,2014-06-06 final data sheet revisionhistory IPP50R500CE revision:2014-06-06,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.0 2012-06-29 release of final version 2.1 2014-06-06 removal of to-220fp welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. tab d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d

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