2006. 11. 23 1/2 semiconductor technical data KDR582E schottky barrier type diode revision no : 0 for high speed switching. features low reverse current, low capacitance. small package : esc. maximum rating (ta=25 ) esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode 2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) type name marking s4 characteristic symbol rating unit repetitive peak reverse voltage v r 4 v reverse voltage v r 4 v forward current i f 130 ma power dissipation p d * 150 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit forward voltage v f i f =0.1ma 0.2 - 0.35 v i f =1ma 0.25 - 0.45 i f =10ma 0.35 - 0.6 reverse current i r v r =3v - - 0.25 a v r =3v, t a =60 - - 1.25 total capacitance c t v r =0v, f=1mhz 0.4 - 0.75 pf series resistance r s i f =5ma, f=10khz - - 15 * mounted on a glass epoxy circuit board of 20 20 , pad dimension of 4 4
2006. 11. 23 2/2 KDR582E revision no : 0 i r - v r c t - v r reverse voltage v r (v) 0 total capacitance c t (pf) 246810 0 0.1 0.2 0.3 0.4 0.5 0246810 v f - i f 10 0 forward current i f (ma) forward voltage v f (v) f=1mhz 1.0 0.8 0.6 0.4 0.0 0.2 10 -1 10 -2 10 2 10 3 10 1 10 0 ta=25 c reverse current i r ( a) reverse current v r (v) f=1mhz
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