1n5719, 1n5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 pin diodes for rf switching and attenuating data sheet description/applications these general purpose switc h ing diodes are intended for low power switching applications such as rf duplexers, antenna switching matrices, digital phase shifters, and time multi plex flters. the 5082-3188 is optimized for vhf/uhf bandswitching. the rf resistance of a pin diode is a function of the current fowing in the diode. these current controlled resistors are specifed for use in control appl i cations such as variable rf attenuators, automatic gain control circuits, rf modula - tors, electrically tuned flters, analog phase shifters, and rf limiters. outline 15 diodes are available on tape and reel. the tape and reel specifcation is patterned after rs-296-d. outline 15 maximum ratings junction operating and storage temperature range ......................... -65c to +150c power dissipation 25c ................................................. 250 mw (derate linearly to zero at 150c) peak inverse voltage (piv) ...................................... same as v br maximum soldering temperature ............... 260c for 5 sec features ? low harmonic distortion ? large dynamic range ? low series resistance ? low capacitance 0.41 (.016) 0.36 (.014) 25.4 (1.00) min. 25.4 (1.00) min. 1.93 (.076) 1.73 (.068) cathode dimensions in millimeters and (inches). 4.32 (.170) 3.81 (.150)
2 mechanical specifcations the avago outline 15 package has a glass hermetic seal with dumet leads. the lead fnish is 95-5 tin-lead (snpb) for all pin diodes. the leads on the outline 15 package should be restricted so that the bend starts at least 1/16 inch (1.6 mm) from the glass body. typ i cal package inductance and ca - pacitance are 2.5 nh and 0.13 pf, respectively. marking is by digital coding with a cathode band. general purpose diodes electrical specifcations at t a = 25c maximum minimum maximum part total breakdown residual series efective carrier reverse recovery number capacitance voltage resistance lifetime time 5082- c t (pf) v br (v) r s ( ? ) (ns) t rr (ns) general purpose switching and attenuating 3001 0.25 200 1.0 100 (min.) 100 (typ.) 3039 0.25 150 1.25 100 (min.) 100 (typ.) 1n5719 0.3** 150 1.25 100 (min.) 100 (typ.) 3077 0.3 200 1.5 100 (min.) 100 (typ) band switching 3188 1.0* 35 0.6** 70 (typ.)* 12 (typ.) test v r = 50 v v r = v br i f =100 ma i f = 50 ma i f = 20 ma conditions *v r = 20 v measure *i f = 20 ma i r = 250 ma v r = 10 v **v r = 100 v i r 10 a **i f = 10 ma *i f = 10 ma 90% recovery f = 1 mhz f = 100 mhz *i r = 6 ma notes: typical cw power switching capability for a shunt switch in a 50? system is 2.5 w. rf current controlled resistor diodes electrical specifcations at t a = 25c max. max. high low diference efective min. residual max. resistance resistance in carrier breakdown series total limit, r h ( ? ) limit, r l ( ? ) resistance part lifetime voltage resistance capacitance vs. bias number (ns) v br (v) r s ( ? ) c t (pf) min. max. min. max. slope, dc 5082-3080 1300 (typ.) 100 2.5 0.4 1000 8** 1n5767* 1300 (typ.) 100 2.5 0.4 1000 8** 5082-3379 1300 (typ.) 50 0.4 8** 5082-3081 2500 (typ.) 100 3.5 0.4 1500 8** test i f = 50 ma v r = v br , i f = 100 ma v r = 50 v i f = 0.01 ma i f = 1.0 ma batch conditions i r = 250 ma measure f = 100 mhz f = 1 mhz f = 100 mhz i f = 20 ma** matched at i r 10 a f = 100 mhz i f = 0.01 ma and 1.0 ma f = 100 mhz *the 1n5767 has the additional specifcations: = 1.0 msec minimum i r = 1 a maximum at v r = 50 v v f = 1 v maximum at i f = 100 ma.
3 typical parameters at t a = 25c (unless otherwise noted) i f ? forward bias current (ma) figure 2. typical rf resistance vs. forward bias current. 10,000 1000 100 10 1 0.1 rf resistance (ohms) 0.001 0.01 0.1 1 10 100 5082-3001 5082-3039 5082-3077 in5719 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 i f ? forward current (ma) v f ? forward voltage (v) figure 1. forward current vs. forward voltage. 5082-3001, 3039, 3077, 3080 in5719 125 c 25 c ?60 c figure 3. typical rf resistance vs. forward bias current. i f ? forward bias current (ma) 100,000 10,000 1000 100 10 1 rf resistance (ohms) 0.001 0.01 0.1 1 10 100 5082-3080 5082-3379 5082-3081 reverse voltage (v) figure 4. typical capacitance vs. reverse voltage. 1.0 .5 0 capacitance (pf) 0 1 0 2 0 30 40 50 60 70 figure 5. typical capacitance vs. reverse voltage. 5082-3001 3039 3077 in571 9 5082-3039 in571 9 5082-3001 reverse voltage (v) 2.5 .5 1.0 1.5 2.0 0 capacitance (pf) 0 1 0 2 0 30 40 50 60 70 5082-3080 5082-3081 5082-3379 5082-3188 figure 7. typical second order intermodulation distortion. frequency (mhz) 0 80 60 40 20 100 below first order (db) 0 1 0 2 0 30 40 50 60 80 70 10 db bridged tee attenuator 40 db mv output levels one input frequency fixed 100 mhz 5082-3081 figure 6. typical reverse recovery time vs. forward current for various reverse driving voltages. forward current (ma) reverse recovery time (ns) 0 1 0 2 0 3 0 v r = 5 v v r = 1 0 v v r = 20 v 1000 100 1 0 5082-3080 5082-3379 figure 8. typical cross intermodulation distortion. modulated frequency (mhz) 1 0 70 60 50 40 30 20 80 below first order (db) 0 1 0 2 0 30 40 50 60 80 70 pin diode cross modulation 10 db bridged tee attenuator unmodulated frequency 100 mhz 100% modulation 15 khz 40 db mv output levels 5082-3081 5082-3080 5082-3379
diode package marking 1n5xxx 5082-xxxx would be marked: 1nx xx xxx xx yww yww where xxxx are the last four digits of the 1nxxxx or the 5082 - xxxx part num - ber. y is the last digit of the calendar year. ww is the work week of manufac - ture. examples of diodes manufactured during workweek 45 of 1999: 1n5712 5082-3080 would be marked: 1n5 30 712 80 945 945 part number ordering information part number no. of devices container 5082-3xxx#t25/1n57xx#t25 2500 tape & reel 5082-3xxx#t50/ 1n57xx#t50 5000 tape & reel 5082-3xxx/ 1n57xx 100 antistatic bag for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, pte. in the united states and other countries. data subject to change. copyright ? 2006 avago technologies pte. all rights reserved. obsoletes 5989-3339en av02-0477en - june 6, 2007
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