1 n-channel 20-v (d-s) mosfet fe atu res ? halo gen-free ? tren chfet ? power mosfet appli cations ? load sw itches for portable devices no tes : a. package limited, t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 95 c/w. e. see reliability manual for profile. the chipfet is a leadless package. the end of t he lead terminal is exposed copper (not pl ated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. product summary v ds (v) r ds(on) ( ) i d (a ) a q g (t yp.) 20 0.033 at v gs = 4.5 v 6.8 10 nc 0.045 at v gs = 2.5 v 6.8 n - c hannel m os fet g d s ab solute ma ximum ratings t a = 25 c, unless otherwise noted p arameter symbol limit unit dr a i n-s ource voltage v ds 20 v gate-sou rce v oltage v gs 12 con tinuous drain current (t j = 150 c) t c = 2 5 c i d 6.8 a a t c = 7 0 c 6 a t a = 25 c 6.8 a, b , c t a = 70 c 6 a, b , c pulsed drain current i dm 30 con tinuous source-drain diode current t c = 2 5 c i s 5.2 t a = 25 c 2.1 b, c maxim um po wer dissipation t c = 2 5 c p d 6.3 w t c = 7 0 c 4 t a = 25 c 2.5 b, c t a = 70 c 1.6 b, c oper ating junction and stor age temperature range t j , t stg - 55 to 150 c soldering recommendations (p eak temperature) e, f 260 thermal res ist ance ratings p aram eter s y mbo l typical maximum u nit ma ximum junction-to-ambient a, c , d t 5 s r th ja 40 50 c/w maxim um j unction-to-foot (drain) steady state r th jf 15 20 rohs compliant d g s d dt c2058 www.din-tek.jp
2 no te s: a. p ulse test; pulse width d 300 s, duty cycle d 2 % b. guaranteed by design, not s ubject to production testing. st resses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecifications t j = 25 c, unless otherwise noted p arame ter s ymbol t est c onditions min. typ. max. unit static drain-source breakdo wn v oltage v ds v gs = 0 v , i d = 250 a 20 v v ds t emperature coefficient ' v ds /t j i d = 250 a 25 mv/c v gs( th) t emperature co efficient ' v gs( th) /t j - 4. 0 gate-so urce threshold voltage v gs( th) v ds = v gs , i d = 250 a 0.6 1.5 v gate-source leakage i gss v ds = 0 v , v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 20 v , v gs = 0 v 1 a v ds = 20 v , v gs = 0 v , t j = 55 c 10 on-state dr ain current a i d(on) v ds t 5 v , v gs = 4.5 v 30 a drain-source on-state resista nce a r ds( on ) v gs 4.5 v , i d = 8.3 a 0.026 0.033 : v gs 2.5 v , i d = 4.5 a 0.030 0.045 forward transconductance a g fs v ds = 10 v , i d = 8.3 a 45 s dy nami c b inpu t capacitance c iss v ds = 10 v , v gs = 0 v , f = 1 mhz 1200 pf output capacitance c os s 220 re verse transfer capacitance c rs s 100 t otal gate charge q g v ds = 10 v , v gs = 10 v , i d = 8.3 a 22 33 nc v ds = 10 v , v gs = 4.5 v , i d = 8.3 a 10 15 gate-so urce charge q gs 2.5 gate- dra in charge q gd 1.7 g ate resistance r g f = 1 mhz 2.4 : tur n -on delay time t d( on) v dd = 10 v , r l = 1.5 : i d # 6.7 a, v gen = 4.5 v , r g = 1 : 15 25 ns rise time t r 10 15 t ur n -off delay time t d( off) 35 55 fal l time t f 12 20 tur n-on delay time t d( on) v dd = 10 v , r l = 1.5 : i d # 6.7 a, v gen = 10 v , r g = 1 : 10 15 rise time t r 12 20 tur n-off delay time t d( off) 25 40 fal l time t f 10 15 drain - so ur ce body diode characteristics continuous source-drain diode current i s t c = 25 c 5.2 a pulse diode f orw ard current i sm 30 body diode v oltage v sd i s = 6.7 a, v gs = 0 v 0.8 1.2 v body diode re verse recovery time t rr i f = 6.7 a, di /dt = 100 a/s, t j = 25 c 20 40 ns body diode re v erse recovery charge q rr 10 20 nc re verse recovery fall time t a 10 ns re verse reco v ery rise time t b 10 ' 7 & |