rev.1.00, oct.05.20 05, page 1 of 3 H5N2802PF silicon n channel mos fet high speed power switching rej03g1298-0100 rev.1.00 oct.05.2005 features ? low on-resistance ? low leakage current ? high speed switching outline renesas package code: prss0003za-a (package name: to-3pfm) 1. gate 2. drain 3. source 1 2 3 d g s absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 280 v gate to source voltage v gss 30 v drain current i d 25 a drain peak current i d (pulse) note1 100 a body-drain diode reverse drain current i dr 25 a body-drain diode reverse drain peak current i dr (pulse) note1 100 a avalanche current i ap note3 13 a avalanche energy e ar note3 10.2 mj channel dissipation pch note2 60 w channel to case thermal impedance ch-c 2.08 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c 3. stch = 25 c, tch 150 c
H5N2802PF rev.1.00, oct.05.20 05, page 2 of 3 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 280 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 1 a v ds = 280 v, v gs = 0 gate to source leak current i gss ? ? 0.1 a v gs = 30 v, v ds = 0 gate to source cutoff voltage v gs(off) 3.0 ? 4.0 v v ds = 10 v, i d = 1 ma forward transfer admittance |y fs | 15 27 ? s i d = 12.5 a, v ds = 10 v note4 static drain to source on state resistance r ds(on) ? 0.057 0.066 ? i d = 12.5 a, v gs = 10 v note4 input capacitance ciss ? 3600 ? pf output capacitance coss ? 450 ? pf reverse transfer capacitance crss ? 32 ? pf v ds = 25 v, v gs = 0, f = 1 mhz turn-on delay time t d(on) ? 50 ? ns rise time t r ? 90 ? ns turn-off delay time t d(off) ? 120 ? ns fall time t f ? 75 ? ns i d = 12.5 a, v gs = 10 v, r l = 11.2 ? , rg = 10 ? total gate charge qg ? 72 ? nc gate to source charge qgs ? 18 ? nc gate to drain charge qgd ? 24 ? nc v dd = 220 v, v gs = 10 v, i d = 25 a body-drain diode forward voltage v df ? 0.88 1.40 v i f = 25 a, v gs = 0 note4 body-drain diode reverse recovery time t rr ? 200 ? ns body-drain diode reverse recovery charge q rr ? 1.4 ? c i f = 25 a, v gs = 0, di f /dt = 100 a/ s notes: 4. pulse test
H5N2802PF rev.1.00, oct.05.20 05, page 3 of 3 package dimensions 0.66 15.6 0.3 5.5 0.3 3.2 0.3 5.45 0.5 4.0 0.3 5.0 0.3 2.7 0.3 19.9 0.3 21.0 0.5 1.6 0.86 3.2 + 0.4 ? 0.2 2.6 0.86 5.45 0.5 5.0 0.3 + 0.2 ? 0.1 2.0 0.3 0.9 + 0.2 ? 0.1 package name prss0003za-a to-3pfm / to-3pfmv mass[typ.] 5.2g sc-93 renesas code jeita package code unit: mm ordering information part name quantity shipping container H5N2802PF-e 30 pcs plastic magazine note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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