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4 1 f o 1 e g a p 0 0 . 3 . v e r 0 0 3 0 j e 9 3 0 0 s d 9 0 r ma r 12, 2013 t he mark < r> s ho w s major rev is ed point s. t he revised point s can be easily s earched b y cop y i ng an "" in t h e pdf f ile and sp ecif y i ng it in t he " f ind w hat:" f ield. t e e h s a t a d NE5550234 silicon power mos fet fea t ure s ? hig h out put p o we r : p out = 3 3 . 0 d b m t y p. ( v d s = 7. 5 v , i dset = 40 m a , f = 460 m h z, p in = 15 dbm ) ? high powe r a d ded efficiency : add = 68% typ. ( v ds = 7.5 v , i dset = 40 m a , f = 460 mh z, p in = 15 db m ) ? high l i n ear g a i n : g l = 2 3 . 5 d b typ . ( v d s = 7 . 5 v, i dset = 4 0 m a , f = 4 6 0 m h z, p in = 0 db m ) ? high esd t o leran ce ? suitable fo r v h f t o uh f-b a n d class - a b p o we r am plifier. applications ? 1 5 0 m h z b a n d r a d i o s y s t e m ? 4 6 0 m h z b a n d r a d i o s y s t e m ? 9 0 0 m h z b a n d r a d i o s y s t e m ordering information pa rt numbe r orde r numbe r pack a g e marki ng supply i ng for m 5 v z a - 4 3 2 0 5 5 5 e n 4 3 2 0 5 5 5 e n ? 12 mm w i de e mbosse d tapin g ? ga te pin faces the perforati on side o f the ta p e n e 5 5 502 34-t 1 n e 5 5 502 34-t 1-a z 3-pin p o w e r minimold (34 pkg) (pb-f ree) ? 12 mm w i de e mbosse d tapin g ? ga te pin faces the perforati on side o f the ta p e ? qty 1 k p cs/reel rema r k t o order evalu a tion sam p les, pleas e contact y o ur n e arb y s a les o ffice. pa rt number fo r sa mple o rd e r: n e555 023 4-az absolute maxim u m ratings (t a = 25 c, unless otherw ise specified) o p eration in e x cess of a n y o n e o f t h ese p a r a m eters m ay resu lt i n p er m a n e n t d am ag e. para mete r symbol ratings unit drain to s o urc e voltag e v d s 30 v gate to source voltage v g s 6 .0 v i t n e r r u c n i a r d d s 0 .6 a drain c u rrent (50% dut y p u l sed) i d s - pul s e 1 .2 a t o tal p o w e r d i ssipati o n note p t o t 12.5 w chan n e l t e m per a t u r e t c h 150 c storage t e mperature t s t g ? 65 to + 150 c note: value at t c = 2 5 c ca utio n observe p r e c aution s wh en handlin g be cause these d evi ce s are se nsitive to electrostati c disch arg e. r09 d s0 039e j03 00 rev.3.00 mar 12, 20 13 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ne55 502 34 4 1 f o 2 e g a p 0 0 . 3 . v e r 0 0 3 0 j e 9 3 0 0 s d 9 0 r ma r 12, 2013 recommended operating range (t a = 25 c) pa rame ter sy mbol test condition s min. typ. m a x. unit drain to s o urc e voltag e v d s ? 7.5 9.0 v gate to source voltage v g s 1.65 2.20 2.85 v i t n e r r u c n i a r d d s ? 0.38 ? a p r e w o p t u p n i i n f = 460 mhz, v d s = 7.5 v ? 15 20 dbm electrical charact e r ist i cs (t a = 25 c, unless otherw ise specified) pa rame ter sy mbol test condition s min. typ. m a x. unit s c i t s i r e t c a r a h c c d ga te to source leaka ge curr ent i gss v g s = 6.0 v ? ? 100 na drain to s o urc e leak age c u r rent ( z ero gate vol t age dra i n cur rent) i d s s v d s = 25 v ? ? 10 a gate t h reshold voltag e v t h v d s = 7.5 v, i d s = 1.0 ma 1.15 1.65 2.25 v drain to so urc e breakd o w n v o l ta g e bv d s s i d s = 10 8 3 5 2 a ? v g e c n a t c u d n o c s n a r t m v d s = 7.5 v, i d s = 140 20 m a ? 0.44 ? s t hermal resistance r t h chan n e l to c a se ? 10.0 ? c/w s c i t s i r e t c a r a h c f r p r e w o p t u p t u o out f = 460 mhz, v d s = 7.5 v, 31.5 33.0 ? dbm i t n e r r u c n i a r d d s p i n = 15 dbm, ? 0.38 ? a p o w e r dra i n e f ficienc y d i dse t = 40 ma ( r f off) ? 70 ? % p o w e r a d ded efficienc y add ? 68 ? % g n i a g r a e n i l l note 1 ? 23.5 ? db loa d vsw r t o lera nce note 2 f = 460 mhz, v d s = 9.0 v, p i n = 15 dbm, i dse t = 40 ma ( r f off) loa d vsw r = 20:1(all p h ase) no destro y p r e w o p t u p t u o out ? 33.0 ? dbm i t n e r r u c n i a r d d s ? 0.36 ? a p o w e r dra i n e f ficienc y d ? 74 ? % p o w e r a d ded efficienc y add ? 73 ? % g n i a g r a e n i l l note 3 f = 157 mhz, v d s = 7.5 v, p i n = 15 dbm, i dse t = 40 ma ( r f off) ? 25.8 ? db p r e w o p t u p t u o out ? 32.2 ? dbm i t n e r r u c n i a r d d s ? 0.35 ? a p o w e r dra i n e f ficienc y d ? 62 ? % p o w e r a d ded efficienc y add ? 60 ? % g n i a g r a e n i l l note 4 f = 900 mhz, v d s = 7.5 v, p i n = 17 dbm, i dse t = 40 ma ( r f off) ? 18.3 ? db notes: 1. p i n = 0 dbm 2 . t hese characteristics values are meas urem ent usin g meas urement tools especially by renesas. 3. p i n = ? 5 dbm 4. p i n = 7 dbm rema r k dc performa n c e is 100 % testing. r f perform anc e is testing several s a mples per w a fer. t he w a fer rej e ction criterio n for standar d d e vi ce s i s 1 rejec t fo r se ve ral sa mples. a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ne55 502 34 4 1 f o 3 e g a p 0 0 . 3 . v e r 0 0 3 0 j e 9 3 0 0 s d 9 0 r ma r 12, 2013 test circuit schematic for 460 mhz c20 c10 in out c22 c11 c12 c21 c1 v ds c1 l1 r1 v gs NE5550234 50 50 l20 l10 l11 c ompon e n ts of test c i r cuit for mea s uri n g elec t r i c a l c h arac ter istic s r e k a m e p y t e u l a v l o b m y s c1 1 a t a r u m l 8 8 a k 5 0 1 h 1 7 r m 1 3 m r g f a t a r u m 1 0 a j 0 7 2 h 1 c 2 8 8 1 m r g f p 7 2 0 1 c a t a r u m 1 0 z c 9 r 3 h 1 c 2 8 8 1 m r g f p 9 . 3 1 1 c a t a r u m 1 0 a j 0 8 1 h 1 c 2 8 8 1 m r g f p 8 1 2 1 c a t a r u m 1 0 a j 0 2 1 h 1 c 2 8 8 1 m r g f p 2 1 0 2 c a t a r u m 1 0 z c 5 r 1 h 1 c 2 8 8 1 m r g f p 5 . 1 1 2 c a t a r u m d 1 0 a j 1 0 1 h 1 c 2 6 1 2 m r g f p 0 0 1 2 2 c r1 4 . 7 k m s s r o t s i s e r p i h c w 0 1 / 1 2 7 4 b p 8 0 6 1 g r _ m s s l1 47.2 nh 0.4 mm, u o y g n a s e h o s n r u t 7 , m m 2 = d l10, l 1 1 12 nh ll1 608-f s1 2 n j toko l20 7.8 nh 0.4 mm, u o y g n a s e h o s n r u t 3 , m m 4 . 1 = d pcb ? r176 6, t = 0.8 mm, r = 4.8, si ze = 30 40 mm p anas onic sma conn ecte r ? a k a w 0 2 - 0 9 7 0 k 1 0 a k a w component layout of t est circuit for 460 mhz o u t v g s v d s c 1 c 1 i n c 1 c 1 r 1 r 1 l 1 l 1 c 1 0 c 1 0 c 1 1 c 1 1 l10 l 1 0 c 1 2 c 1 2 l 1 1 l11 l 2 0 l 2 0 c 2 0 c 2 0 c 2 1 c 2 1 c 2 2 c 2 2 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
NE5550234 r09ds0039ej0300 rev.3.00 page 4 of 14 mar 12, 2013 typical characteristics 1 (t a = 25 c) rf: f = 460mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40 ma, p in = ?15 to 20 dbm im: f1 = 460mhz, f2 = 461 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40ma, p out (2 tone) = 6 to 28 dbm 3rd/5th order intermodulation distortion im 3 /im 5 (dbc) 2 tones output power p out (2 tone) (dbm) im 3 /im 5 vs. 2 tones output power 2nd harmonics 2f 0 (dbc) 3rd harmonics 3f 0 (dbc) output power p out (dbm) 2f 0 , 3f 0 vs. output power power gain g p (db) power added efficiency add (%) input power p in (dbm) power gain, power added efficiency vs. input power 2f 0 - 3.6 v 2f 0 - 4.5 v 2f 0 - 7.5 v 2f 0 - 9 v 3f 0 - 3.6 v 3f 0 - 4.5 v 3f 0 - 9 v 3f 0 - 7.5v 3f 0 - 6 v 2f 0 - 6 v ?70 0 ?10 ?20 ?30 ?40 ?50 ?60 40 252015 0510 30 im 3 - 3.6 v im 3 - 4.5 v im 3 - 7.5 v im 3 - 9 v im 5 - 3.6 v im 5 - 4.5 v im 5 - 9 v im 5 - 7.5 v im 5 - 6 v im 3 - 6 v ?70 0 ?10 ?20 ?30 ?40 ?50 ?60 30252015 0510 output power p out (dbm) drain current i ds (a) input power p in (dbm) output power, drain current vs. input power p out - 3.6 v p out - 4.5 v p out - 7.5 v p out - 9 v p out - 6 v i ds - 7.5 v i ds - 4.5 v i ds - 6 v i ds - 9 v 0 40 35 30 25 20 15 10 5 2520 1050 ?20 ?10 ?5 15 0.0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 ?15 add - 3.6 v add - 7.5 v add - 4.5 v add - 6 v add - 9 v g p - 3.6 v g p - 4.5 v g p - 7.5 v g p - 9 v g p - 6 v 0 0 40 80 35 70 30 60 25 50 20 40 15 30 10 20 51 0 2520 1050 ?20 ?10 ?5 15 ?15 35 i ds - 3.6 v remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550234 r09ds0039ej0300 rev.3.00 page 5 of 14 mar 12, 2013 test circuit schematic for 157 mhz c20 c10 in out c22 c11 c21 c2 v ds c1 l1 r1 v gs NE5550234 50 50 l11 l10 r10 components of test circuit for measuring electrical characteristics symbol value type maker c10 27 pf gqm1882c1h270jb01 murata c11 6.8 pf gqm1882c1h6r8db01 murata c20 8.2 pf gqm1882c1h8r2db01 murata c21 27 pf gqm1882c1h270jb01 murata c22 100 pf gqm1882c1h101jb01 murata c1 1 f grm21bb31h105ka2l murata c2 1 f grm21bb31h105ka2l murata l10 100 nh ll1608-fslr10j toko l11 47 nh d20-47n2 ohesangyou l1 74 nh d20-74n7 ohesangyou r10 5.6 mcr03j5r6 rohm r1 4.7 k mcr03j472 rohm pcb ? r1766, t = 0.8 mm, r = 4.8, size = 30 40 mm panasonic sma connecter ? waka 01k0790-20 waka a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550234 r09ds0039ej0300 rev.3.00 page 6 of 14 mar 12, 2013 component layout of test circuit for 157 mhz c10 c11 c20 c21 c22 c1 r10 l1 c2 l10 rf in rf out v gs v ds l11 r1 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550234 r09ds0039ej0300 rev.3.00 page 7 of 14 mar 12, 2013 typical characteristics 2 (t a = 25 c) rf: f = 157 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40 ma, p in = ?10 to 20 dbm add - 3.6 v add - 6 v add - 4.5 v add - 9 v add - 7.5 v p out - 3.6 v p out - 4.5 v p out - 6.0 v p out - 7.5 v p out - 9 v output power p out (dbm) drain current i ds (a) input power p in (dbm) output power, drain current vs. input power 0 0.0 40 0.8 35 0.7 30 0.6 25 0.5 20 0.4 15 0.3 10 0.2 5 0.1 25 1050 ?15 ?10 ?5 15 power gain g p (db) power added efficiency add (%) input power p in (dbm) power gain, power added efficiency vs. input power g p - 3.6 v g p - 4.5 v g p - 6 v g p - 7.5 v g p - 9 v 00 40 80 35 70 30 60 25 50 20 40 15 30 10 20 510 i ds - 3.6 v i ds - 6 v i ds - 4.5 v i ds - 9 v i ds - 7.5 v 20 25 1050 ?15 ?10 ?5 15 20 remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550234 r09ds0039ej0300 rev.3.00 page 8 of 14 mar 12, 2013 test circuit schematic for 900 mhz c10 in out c22 c21 c20 c2 v ds c1 l1 r1 v gs NE5550234 50 50 l11 l10 components of test circuit for measuring electrical characteristics symbol value type maker c10 10 pf gqm1882c1h100jb01 murata c20 6.8 pf gqm1882c1h6r8db01 murata c21 1 pf gqm1884c2a1r0cb01 murata c22 100 pf gqm1882c1h101jb01 murata c1 1 f grm21bb31h105ka2l murata c2 1 f grm21bb31h105ka2l murata l10 2.7 nh ll1608-fsl2n7s toko l1 74 nh d20-74n7 ohesangyou r1 4.7 k mcr03j472 rohm pcb ? r1766, t = 0.8 mm, r = 4.8, size = 30 40 mm panasonic sma connecter ? waka 01k0790-20 waka a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550234 r09ds0039ej0300 rev.3.00 page 9 of 14 mar 12, 2013 component layout of test circuit for 900 mhz c10 c20 c21 c22 c1 r1 l1 c2 l10 rf in rf out v gs v ds a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550234 r09ds0039ej0300 rev.3.00 page 10 of 14 mar 12, 2013 typical characteristics 3 (t a = 25 c) rf: f = 900 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40 ma, p in = ?10 to 20 dbm input power p in (dbm) power gain, drain current vs. input power 0 35 30 25 20 15 10 5 0 35 30 25 20 15 10 5 0 100 80 60 40 20 2520 1050 ?15 ?10 ?5 15 2520 1050 ?15 ?10 ?5 15 power gain g p (db) power added efficiency add (%) input power p in (dbm) output power, power added efficiency vs. input power output power p out (dbm) drain current i ds (a) 140 120 0 0.5 0.4 0.3 0.2 0.1 0 100 80 60 40 20 0 100 80 60 40 20 0.7 0.6 add - 6.0 v add - 4.5 v add - 7.5 v add - 9 v add - 3.6 v g p - 3.6 v g p - 4.5 v g p - 6 v g p - 7.5 v g p - 9 v i ds - 3.6 v i ds - 6.0 v i ds - 4.5 v i ds - 9 v i ds - 7.5 v p out - 3.6 v p out - 4.5 v p out - 6.0 v p out - 7.5 v p out - 9 v remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550234 r09ds0039ej0300 rev.3.00 page 11 of 14 mar 12, 2013 s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/ a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550234 r09ds0039ej0300 rev.3.00 page 12 of 14 mar 12, 2013 mounting pad layout dimensions 3-pin power minimold (34 pkg) (unit: mm) 2.2 1.0 2.0 2.0 1.0 1.0 1.4 0.4 0.9 2.8 45 45 remark the mounting pad layout in this document is for reference only. when designing pcb, please consider workability of moun ting, solder joint reliability, prevention of solder bridge and so on, in order to optimize the design. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550234 r09ds0039ej0300 rev.3.00 page 13 of 14 mar 12, 2013 package dimensions 3-pin power minimold (34 pkg) (unit: mm) (bottom view) (side view) pin connections 1. drain 2. source 3. gate 1.50.1 0.41 +0.03 ?0.06 4.50.1 0.420.06 0.420.06 1.60.2 3.0 1.5 2 13 2.50.1 4.00.25 0.8 min. 0.470.06 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
NE5550234 r09ds0039ej0300 rev.3.00 page 14 of 14 mar 12, 2013 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (pack age surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ws260 partial heating peak temperature (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below hs350 caution do not use different soldering methods together (except for partial heating). a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history NE5550234 data sheet description rev. date page summary 1.00 apr 25, 2012 ? first edition issued 2.00 jul 04, 2012 p.2 modification of electrical characteristics 3.00 mar 12, 2013 p3 modification of components of test circuit for measuring electrical characteristics p5 modification of test circuit schematic for 157 mhz p8 modification of components of test circuit for measuring electrical characteristics

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