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1 TGA4807 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com key features and performance ? single-ended input / output ? small signal gain 19db ? small signal bandwidth 10ghz ? wide drive range (3v to 11v) ? 25ps edge rates (20/80) ? power dissipation 2.25watts ? die size: 3.3 x 2 x 0.1 mm primary applications ? mach-zehnder modulator driver for metro and long haul. description the triquint TGA4807 is part of a series of optical driver amplifiers suitable for a variety of driver applications. the TGA4807 is a medium power wideband agc amplifier mmic die that typi cally provides 19db small signal gain with 19db agc range. rf ports are dc coupled enabling the user to customize system corner frequencies. the TGA4807 is an excellent choice for applications requiring high drive levels. the TGA4807 has demonstrated capability to amplify a 2v input signal to 11vpp saturated. the TGA4807 requires off-chip decoupling, a dc block and a bias tee. the TGA4807 is available in die form. lead-free and rohs compliant TGA4807 fixtured data vd(rfout)=7v, id=250ma, (pdc=1.75w) vout=11vpp, vin = 2vpp scale: 2v/div, 15ps/div measured performance vin=2v 10.7gb/s vout=11vpp 10.7gb/s modulator driver amplifier datasheet subject to change without notice www.datasheet.net/ datasheet pdf - http://www..co.kr/
2 TGA4807 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com symbol parameter 6 / value notes vd positive supply voltage drain voltage at rf output 7 v id positive supply current drain current 285 ma 1 / p d power dissipation 2.2 w 2 / vg ig negative gate voltage gate current 0 v to ?3 v 5 ma vctrl ictrl control gate voltage gate current vd/2 to ?3 v 5 ma 3 / p in rf input sinusoidal continuous wave power 23 dbm t ch operating channel temperature 200 c 4 / 5/ mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c notes: 1 / assure the combination of vd and id does not exceed maximum power dissipation rating. 2 / when operated at this bias condition with a base plate temperature of 70 c, the median life is 3.4e6 hours. 3 / assure vctrl never exceeds vd during bias on and off sequences, and normal operation. 4 / these ratings apply to each individual fet. 5 / junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6 / these ratings represent the maxi mum operable values for the device. maximum ratings www.datasheet.net/ datasheet pdf - http://www..co.kr/
3 TGA4807 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com parameter test condition p diss (w ) t base ( c) t ch ( c) jc ( c/w) tm (hrs) jc thermal resistance (channel to backside of carrier) vd(rfout)=7v id=250ma 1.75 70 122 30 1.2e7 thermal information notes: 1. assumes worst case power dissipation cond ition where no rf is applied at the input (no power is dissipated in the load). 2. thermal transfer is conducted thru the bottom of the TGA4807 into the mounting carrier. design the mounting interface to assure adequate thermal transfer to the base plate. 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 1.e+12 1.e+13 25 50 75 100 125 150 175 200 channel temperature ( c) median lifetime (hours) fet3 median lifetime (tm) vs. channel temperature www.datasheet.net/ datasheet pdf - http://www..co.kr/
4 TGA4807 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com dc probe test (ta = 25 c, nominal) limits notes symbol min max units 1/, 2/ |v bvgs | 13 v 1/, 2/ |v bvgd | 13 v notes: 1 / verified at die level on-wafer probe. 2 / v bvgs and v bvds are negative. definitions: v bvgs : breakdown voltage, gate to source v bvgd : breakdown voltage, gate to drain www.datasheet.net/ datasheet pdf - http://www..co.kr/
5 TGA4807 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com rf specifications (t a = 25 c nominal) note test measurement conditions value units min typ max small signal bw 10 ghz 1/, 2 / small-signal gain magnitude 2 ghz 4 ghz 6 ghz 10 ghz 14 ghz 18 17 16 15 12 db 1/, 2 / small signal agc range 2, 4, 6, 10, and 14ghz 20 db 1/, 2 / input return loss magnitude 2, 4, 6, 10, and 14ghz 10 db 1/, 2 / output return loss magnitude 2, 4, 6, 10, and 14ghz 12 db 3/, 4 / saturated output power 2, 4, 6, 10, and 14ghz 25 dbm 3/, 4 / eye amplitude vd(rfout) = 7v vd(rfout) = 6v vd(rfout) = 5v vd(rfout) = 4v 11.0 10.0 9.0 8.0 vpp 3/, 5 / additive jitter 5ps 3/ rise time 25 ps notes: 1 / verified at package level rf probe. 2 / bias: v + = 7 v, adjust vg1 to achieve id = 250 ma, vctrl = +1 v 3 / verified by design, TGA4807 assembled onto a demonstration board shown on page 9 then tested using the application circuit and bias procedure detailed on pages 7 and 8. 4 / vin = 2 v, data rate = 12.5 gb/s, vctr l and vg are adjusted for maximum output. 5 / computed using rss method where jpp_additive = sqrt(jpp_out 2 - jpp_in 2 ) www.datasheet.net/ datasheet pdf - http://www..co.kr/
6 TGA4807 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com typical small signal s-parameters www.datasheet.net/ datasheet pdf - http://www..co.kr/
7 TGA4807 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 2 rf(in) vd(rfout) vg vctrl TGA4807 vdt TGA4807 application circuit bias tee (pspl 5545) 4 6 13 19 rf(out) v + (no connection) dc block (pspl 5509) c1 c4 c5 c6 c3 c2 notes: recommended components are detailed on page 9. www.datasheet.net/ datasheet pdf - http://www..co.kr/
8 TGA4807 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com bias on 1. disable the rf source (ppg) 2. set vdt=0v vctrl=0v and vg=0v 3. set vg=-1.5v 4. increase vdt to 8v observing id. - assure id=0ma 5. set vctrl=+1.2v - id should still be 0ma 6. make vg more positive until idd=250ma . - typical value for vg is -0.2v 7. measure v + , adjust vdt such that v + is 7v. - this will set vd(rfout) to approximately 7v. - idd will increase slightly 8. adjust vg such that idd=250ma. 9. enable the rf source (ppg) - set vin=2v 10. output swing adjust: adjust vctrl slightly positive to increase output swing or adjust vctrl slightly negative to decrease the output swing. - typical value for vctrl is +1.2v for vo=11v. 11. crossover adjust: adjust: vg slightly positive to push the crossover down or adjust vg slightly negative to push the crossover up. - typical value for vg is -0.57v to center crossover with vo=11v. bias off 1. disable the output of the ppg 2. set vctrl=0v 3. set vdt=0v 4. set vg=0v bias procedure for 11v output notes: 1. assure vctrl never exceeds vd dur ing bias on and bias off sequences and during normal operation. www.datasheet.net/ datasheet pdf - http://www..co.kr/
9 TGA4807 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. recommended assembly diagram c4 c5 c1 c2 c6 c3 designator description manufacturer part number c1, c4 1500pf capacitor slc presidio sl5050x7r1522h5 c2, c5 0.1uf capacitor mlc ceramic avx 0603yc104kat c3 10uf capacitor mlc ceramic avx 0603yc102kat c6 0.01 uf capacitor mlc avx 0603yc103kat recommended components: rf(out) and vd(rfout) rf(in) vg v + vctrl www.datasheet.net/ datasheet pdf - http://www..co.kr/
10 TGA4807 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA4807 detector application circuit designator description manufacturer part number r1, r2 40k ohm resistor chip silicon msi msbc 2st-40001f-e c7, c8, c9 100pf capacitor slc ceramic avx gb015810ka6 c10 .01uf capacitor mlc ceramic avx vl303x7r103m16vg5 recommended components: 10 11 8 9 2 TGA4807 4 6 13 19 r1 c8 r2 vdet 5-8v vref c9 rf(in) rf(out) c10 c7 www.datasheet.net/ datasheet pdf - http://www..co.kr/
11 TGA4807 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com assembly notes: reflow attachment: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c use alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere adhesive attachment: organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical component pickup and placement: vacuum pencil and/or vacuum collet preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement interconnect: thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200 c assembly process notes www.datasheet.net/ datasheet pdf - http://www..co.kr/
12 TGA4807 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA4807 mechanical drawing 3.335 (0.131) 3.014 (0.119) 2.832 (0.111) 0.154 (0.006) 0.130 (0.005) 0.000 (0.000) 0.174 (0.007) 0.928 (0.037) 1.343 (0.053) 0.381 (0.015) 0.767 (0.030) 3.159 (0.124) 3.206 (0.126) 0.000 (0.000) 0.934 (0.037) 0.437 (0.017) 2.000 (0.079) 1.868 (0.074) 2.475 (0.097) 2.686 (0.106) 2.932 (0.115) 3.181 (0.125) 1.870 (0.074) 0.155 x 0.155 (0.006 x 0.006) 0.106 x 0.157 (0.004 x 0.006) 0.368 x 0.109 (0.014 x 0.004) 0.368 x 0.109 (0.014 x 0.004) 0.095 x 0.095 (0.004 x 0.004) 0.095 x 0.095 (0.004 x 0.004) 0.095 x 0.095 (0.004 x 0.004) 0.095 x 0.095 (0.004 x 0.004) 0.155 x 0.155 (0.006 x 0.006) 0.106 x 0.157 (0.004 x 0.006) 0.155 x 0.155 (0.006 x 0.006) 0.155 x 0.155 (0.006 x 0.006) units: millimeters (inches) thickness: 0.100 (0.004) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) rf gnd is backside of mmic bond pad #1 (rf in) bond pad #2 (vctrl) bond pad #3 (v+) bond pad #4 (v+ aux) bond pad #5 (vref) bond pad #6 (a) bond pad #7 (b) bond pad #8 (v det) bond pad #9 (rf out) bond pad #10 (vctrl aux) bond pad #11 (vg aux) bond pad #12 (vg) 1 2 34 5 6 7 8 9 10 11 12 www.datasheet.net/ datasheet pdf - http://www..co.kr/

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