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H220M H101M H101M 2N5786 MIW2334 SP741 214A0 C74HC40
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  1. produc t profile 1.1 g eneral description pnp me dium po we r tr an sistor ser i es in su r f a c e - m oun te d de vice ( s m d ) p l astic p a ckag es. [1] v alid for all avail able sele ction gro up s . 1.2 features and benefit s ? hig h cu rr en t ? th re e cu rr en t ga in selection s ? high power diss ip ation c a p a bility ? expose d hea t s ink for exce llen t ther ma l a nd el ectr ical co ndu ctivity ( s ot8 9 , sot10 61) ? leadless very small smd pl as tic p a ckage w ith medium power c a p a bility (sot1061) ? aec-q101 qualified 1.3 a pplications ? l i nea r volt ag e re gu lator s ? high-side switches ? ba tte ry -d rive n d e v i c e s ? powe r man age men t ? mosfet drivers ? amplifiers 1.4 q u i ck referen ce d at a bcp52; bcx52; BC52PA 60 v, 1 a pnp medium power transistors rev. 9 ? 18 october 2011 product data sheet table 1. product overview type number [1] package npn complement nxp jeita je dec bcp52 s ot223 s c-73 - b cp55 bcx52 sot89 sc-62 t o- 243 bcx55 BC52PA sot1061 - - bc55pa table 2. quick reference data symbol parameter conditions min typ max unit v ceo col l ector-emitte r vol t ag e o pen ba se - - ? 60 v i c col lector cu rrent - - ? 1a i cm peak collector current single pulse; t p ? 1ms - - ? 2a pdf create 8 trial www.nuance.com http://
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 2 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors 2. pinning information h fe dc curren t ga in v ce = ? 2v ; i c = ? 15 0 m a 63 - 2 50 h fe sele ctio n - 1 0 v ce = ? 2v ; i c = ? 15 0 m a 63 - 1 60 h fe sele ctio n - 1 6 v ce = ? 2v ; i c = ? 15 0 m a 10 0 - 2 50 t a ble 2. qu ick refe ren ce da t a ?continu ed symbol parameter conditions min typ max unit table 3. pinning pin description simplified outline graphic symbol sot223 1b a s e 2 c ol lector 3e m i t t e r 4 c ol lector sot89 1e m i t t e r 2 c ol lector 3b a s e sot1061 1b a s e 2e m i t t e r 3 c ol lector 13 2 4 sym028 2, 4 3 1 321 006aaa231 2 1 3 transparent top view 12 3 sym013 3 2 1 pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 3 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors 3. ordering information [1] v alid for all avail able sele ction gro up s . 4. marking t a bl e 4. or de rin g i n fo rmati on type number [1] package name description ve r s i o n bcp52 s c-73 p l astic su rface - mo unted p a cka ge with increa sed h eat sink; 4 l e ads sot223 bcx52 s c-62 p l astic su rface - mo unted p a cka ge; e x posed d i e p a d for g ood he at transfer; 3 l e ads sot89 bc5 2 p a hu son3 p lastic the rma l e nha nced ul tra thin small o u tl ine p a ckage; no lea d s; 3 t ermina ls; bo dy 2 ? 2 ? 0.65 mm sot 106 1 t a ble 5. mark in g co des type number mark in g co de bcp52 b cp52 bcp52-10 bcp52/10 bcp52-16 bcp52/16 bcx52 a e bcx52-10 ag bcx52-16 am bc52p a bs bc52-10p a b t bc5 2 -16p a b u pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 4 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors 5. limiting values [1] d evice mount ed on an f r 4 p rinted- cir c uit boar d (pcb) , single-sided copp er , tin - plated and st andar d footpr int. [2] d evice mount ed on an f r 4 p cb, sing le- s ided copper , tin-plated, mountin g p ad for collector 1 c m 2 . [3] d evice mount ed on an f r 4 p cb, sing le- s ided copper , tin-plated, mountin g p ad for collector 6 c m 2 . [4] d evice mount ed on an f r 4 p cb, 4- layer copper , tin- plat ed and st andar d footpr int. [5] d evice mount ed on an f r 4 p cb, 4- layer copper , tin- plat ed, mounting p ad fo r collector 1 c m 2 . t a ble 6. limitin g va lu es in a ccordan ce w ith the abso lute ma ximum r a ting syste m (iec 6 0134 ). symbol parameter conditions min max unit v cbo coll ecto r-b a se volt age op en emitte r - ? 60 v v ceo coll ecto r-e m itter volt age op en base - ? 60 v v ebo emitte r-base volt ag e o p en colle cto r - ? 5v i c collector current - ? 1a i cm pea k col l ector current sing le pul se; t p ? 1m s - ? 2a i b base curre nt - ? 0.3 a i bm pea k b a se current sing le pul se; t p ? 1m s - ? 0.3 a p to t tot a l powe r di ssi p ation t amb ? 25 ? c bcp52 [1] -0 . 6 5 w [2] -1 . 0 0 w [3] -1 . 3 5 w bcx52 [1] -0 . 5 0 w [2] -0 . 9 5 w [3] -1 . 3 5 w BC52PA [1] -0 . 4 2 w [2] -0 . 8 3 w [3] -1 . 1 0 w [4] -0 . 8 1 w [5] -1.65w t j jun c ti on te mp erature - 1 50 ? c t am b ambie n t tempe ratu re ? 55 + 150 ? c t stg stor age tempera t ure ? 65 + 150 ? c pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 5 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors (1) f r4 pcb, mounting p a d for collector 6 c m 2 (2) f r4 pcb, mounting p a d for collector 1 c m 2 (3) f r4 pcb, st andar d footprint (1) f r4 pcb, mount ing p ad for collector 6 c m 2 (2) f r4 pcb, mount ing p ad for collector 1 c m 2 (3) f r4 pcb, st andar d footpr int fi g 1. pow e r de rati ng c u rv es s ot 2 2 3 fi g 2 . pow e r de ra ti ng c u rv es so t8 9 (1) f r4 pcb, 4-layer copper , mo untin g p ad for collector 1 c m 2 (2) f r4 pcb, single-sided copper , mount ing p ad for collector 6 c m 2 (3) f r4 pcb, single-sided copper , mount ing p ad for collector 1 c m 2 (4) f r4 pcb, 4-layer copper , st and ard footp r int (5) f r4 pcb, single-sided copper , st andar d footpr int fi g 3. pow e r de rati ng c urv es s ot 1 0 6 1 t amb (c) ?75 175 125 25 75 ?25 006aac674 0.5 1.0 1.5 p tot (w) 0.0 (1) (2) (3) t amb (c) ?75 175 125 25 75 ?25 006aac675 0.5 1.0 1.5 p tot (w) 0.0 (1) (2) (3) t amb (c) ?75 175 125 25 75 ?25 006aac676 1.0 0.5 1.5 2.0 p tot (w) 0.0 (1) (2) (3) (4) (5) pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 6 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors 6. thermal characteristics [1] d evice mount ed on an f r 4 p cb, sing le- s i ded copper , tin-plated a nd st andard footprint. [2] d evice mount ed on an f r 4 p cb, sing le- s ided copper , tin-plated, mountin g p ad for collector 1 c m 2 . [3] d evice mount ed on an f r 4 p cb, sing le- s ided copper , tin-plated, mountin g p ad for collector 6 c m 2 . [4] d evice mount ed on an f r 4 p cb, 4- layer copper , tin- plat ed and st andar d footpr int. [5] d evice mount ed on an f r 4 p cb, 4- layer copper , tin- plat ed, mounting p ad fo r collector 1 c m 2 . t a ble 7. th erm a l c h ar acter is tics symbol parameter conditions min typ max unit r th (j -a ) thermal resist ance from j u nct i o n t o am bi e n t in fre e ai r bcp52 [1 ] -- 1 9 2 k / w [2] -- 1 2 5 k / w [3] -- 9 3 k / w bcx52 [1] -- 2 5 0 k / w [2] -- 1 3 2 k / w [3] -- 9 3 k / w bc52p a [1] -- 2 9 8 k / w [2] -- 1 5 1 k / w [3] -- 1 1 4 k / w [4] -- 1 5 4 k / w [5] -- 7 6k/w r th (j -s p) thermal resist ance from jun c ti on to sol der poi nt bcp52 - - 1 6 k/w bcx52 - - 1 6 k/w bc52 p a - - 20 k/w pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 7 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors f r 4 p cb, st andar d footprint fi g 4. t r a n s i en t th e r ma l impe da n c e fro m ju nc tio n to am bi en t a s a fu nc tio n of p u l se du ra ti o n for so t22 3; typical v alues f r 4 p cb, mounting p a d for collector 1 c m 2 fi g 5. t r a n s i en t th e r ma l impe da n c e fro m ju nc tio n to am bi en t a s a fu nc tio n of p u l se du ra ti o n for so t22 3; typical v alues 006aac677 10 1 10 2 10 3 z th(j-a) (k/w) 10 ?1 10 ?5 10 10 ?2 10 ?4 10 2 10 ?1 t p (s) 10 ?3 10 3 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 006aac678 10 1 10 2 10 3 z th(j-a) (k/w) 10 ?1 10 ?5 10 10 ?2 10 ?4 10 2 10 ?1 t p (s) 10 ?3 10 3 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 8 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors f r 4 p cb, mounting p a d for collector 6 c m 2 fi g 6. t r a n s i en t th e r ma l impe da n c e fro m ju nc tio n to am bi en t a s a fu nc tio n of p u l se du ra ti o n for so t22 3; typical v alues f r 4 p cb, st andar d footprint fi g 7. t r a n s i en t th e r ma l impe da n c e fro m ju nc tio n to amb i e n t as a f u n c ti on o f pu ls e d u rat i on fo r sot 8 9; typical v alues 006aac679 10 1 10 2 10 3 z th(j-a) (k/w) 10 ?1 10 ?5 10 10 ?2 10 ?4 10 2 10 ?1 t p (s) 10 ?3 10 3 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 006aac680 10 1 10 2 10 3 z th(j-a) (k/w) 10 ?1 10 ?5 10 10 ?2 10 ?4 10 2 10 ?1 t p (s) 10 ?3 10 3 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 9 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors f r 4 p cb, mounting p a d for collector 1 c m 2 fi g 8. t r a n s i en t th e r ma l impe da n c e fro m ju nc tio n to amb i e n t as a f u n c ti on o f pu ls e d u rat i on fo r sot 8 9; typical v alues f r 4 p cb, mounting p a d for collector 6 c m 2 fi g 9. t r a n s i en t th e r ma l impe da n c e fro m ju nc tio n to amb i e n t as a f u n c ti on o f pu ls e d u rat i on fo r sot 8 9; typical v alues 006aac681 10 1 10 2 10 3 z th(j-a) (k/w) 10 ?1 10 ?5 10 10 ?2 10 ?4 10 2 10 ?1 t p (s) 10 ?3 10 3 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 006aac682 10 1 10 2 10 3 z th(j-a) (k/w) 10 ?1 10 ?5 10 10 ?2 10 ?4 10 2 10 ?1 t p (s) 10 ?3 10 3 1 0 duty cycle = 1 0.01 0.05 0.1 0.2 0.33 0.5 0.75 0.02 pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 10 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors f r 4 p cb, single-sided copper , st andar d footpr int fi g 10 . t ra ns i e n t th e r ma l impe da n c e fro m ju nc tio n to amb i e n t as a f u n c ti on o f pu ls e d u rat i on fo r sot 1 06 1 ; typical v alues f r 4 p cb, single-sided copper , mount ing p ad for collector 1 c m 2 fi g 1 1 . t ra ns i e n t th e r ma l impe da n c e fro m ju nc tio n to amb i e n t as a f u n c ti on o f pu ls e d u rat i on fo r sot 1 06 1 ; typical v alues 006aac683 10 1 10 2 10 3 z th(j-a) (k/w) 10 ?1 10 ?5 10 10 ?2 10 ?4 10 2 10 ?1 t p (s) 10 ?3 10 3 1 0 duty cycle = 1 0.01 0.05 0.1 0.2 0.33 0.5 0.75 0.02 0.25 006aac684 10 1 10 2 10 3 z th(j-a) (k/w) 10 ?1 10 ?5 10 10 ?2 10 ?4 10 2 10 ?1 t p (s) 10 ?3 10 3 1 0 duty cycle = 1 0.01 0.05 0.1 0.2 0.33 0.5 0.75 0.02 0.25 pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 11 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors f r 4 p cb, single-sided copper , mount ing p ad for collector 6 c m 2 fi g 12 . t ra ns i e n t th e r ma l impe da n c e fro m ju nc tio n to amb i e n t as a f u n c ti on o f pu ls e d u rat i on fo r sot 1 06 1 ; typical v alues f r 4 p cb, 4-layer copper , st and ard footp r int fi g 13 . t ra ns i e n t th e r ma l impe da n c e fro m ju nc tio n to amb i e n t as a f u n c ti on o f pu ls e d u rat i on fo r sot 1 06 1 ; typical v alues 006aac685 10 1 10 2 10 3 z th(j-a) (k/w) 10 ?1 10 ?5 10 10 ?2 10 ?4 10 2 10 ?1 t p (s) 10 ?3 10 3 1 0 duty cycle = 1 0.01 0.05 0.1 0.2 0.33 0.5 0.75 0.02 0.25 006aac686 10 1 10 2 10 3 z th(j-a) (k/w) 10 ?1 10 ?5 10 10 ?2 10 ?4 10 2 10 ?1 t p (s) 10 ?3 10 3 1 0 duty cycle = 1 0.01 0.05 0.1 0.2 0.33 0.5 0.75 0.02 0.25 pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 12 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors 7. characteristics [1] p ulse test: t p ? 300 ? s; ? = 0.02. f r 4 p cb, 4-layer copper , mo untin g p ad for collector 1 c m 2 fi g 14 . t ra ns i e n t th e r ma l impe da n c e fro m ju nc tio n to amb i e n t as a f u n c ti on o f pu ls e d u rat i on fo r sot 1 06 1 ; typical v alues 006aac687 10 1 10 2 10 3 z th(j-a) (k/w) 10 ?1 10 ?5 10 10 ?2 10 ?4 10 2 10 ?1 t p (s) 10 ?3 10 3 1 0 duty cycle = 1 0.01 0.05 0.1 0.2 0.33 0.5 0.75 0.02 0.25 t a ble 8. ch arac teristics t amb =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit i cbo col l ector-base cut-of f current v cb = ? 30 v ; i e =0a - - ? 100 na v cb = ? 30 v ; i e =0a ; t j = 150 ? c -- ? 10 ? a i ebo em it ter-base cut-of f current v eb = ? 5v ; i c =0a - - ? 100 na h fe dc curren t ga in v ce = ? 2v i c = ? 5m a 6 3 - - i c = ? 15 0 m a 6 3 - 25 0 i c = ? 50 0 m a [1 ] 40 - - dc curren t ga in v ce = ? 2v h fe sele ctio n - 1 0 i c = ? 15 0 m a 6 3 - 16 0 h fe sele ctio n - 1 6 i c = ? 15 0 m a 1 00 - 25 0 v cesa t collector-emitter saturation volt age i c = ? 50 0 m a; i b = ? 50 ma [1] -- ? 0.5 v v be ba se -e mi tt er vo lt ag e v ce = ? 2v ; i c = ? 50 0 m a [1] -- ? 1v c c col lector ca p a cit ance v cb = ? 10 v ; i e =i e =0a ; f=1m h z -1 5 - p f f t transitio n freq uen cy v ce = ? 5v ; i c = ? 50 ma; f=1 0 0m h z - 145 - mhz pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 13 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors v ce = ? 2v (1) t amb = 100 ? c (2) t amb =2 5 ? c (3) t amb = ? 55 ? c t am b =2 5 ? c fi g 15 . d c c urren t g a i n as a f u n c ti on of c o ll e c to r curr ent; typica l valu e s f i g 16. co lle c tor cu rr ent as a fun c tion o f c o llec tor - emitte r volt ag e; ty pical value s v ce = ? 2v (1) t amb = ? 55 ? c (2) t amb =2 5 ? c (3) t amb = 100 ? c i c /i b =1 0 (1) t am b = 100 ? c (2) t am b =2 5 ? c (3) t am b = ? 55 ? c f i g 1 7 . ba se-emitter vo lt ag e as a fun c tion o f c o lle c tor curr ent; typica l valu e s fi g 1 8 . c oll ec to r- em it ter sa tu ra tio n vo lt ag e a s a fu nc tio n of co llecto r cu rren t; ty pical value s 006aac688 100 200 300 h fe 0 i c (a) ?10 ?4 ?10 ?1 ?10 ?3 ?10 ?1 ?10 ?2 (1) (2) (3) v ce (v) 0 ? 2.0 ? 1.6 ? 0.8 ? 1.2 ? 0.4 006aaa230 ? 0.8 ? 0.4 ? 1.2 ? 1.6 i c (a) 0 ? 4.5 ? 9 ? 13.5 ? 18 ? 22.5 ? 27 ? 31.5 i b (ma) = ? 45 ? 40.5 ? 36 006aac689 ?0.4 ?0.8 ?1.2 v be (v) 0.0 i c (ma) ?10 ?1 ?10 4 ?10 3 ?1 ?10 2 ?10 (1) (2) (3) 006aac690 ?1 ?10 ?1 ?10 v cesat (v) ?10 ?2 i c (ma) ?10 ?1 ?10 4 ?10 3 ?1 ?10 2 ?10 (1) (2) (3) pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 14 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors 8. t e st information 8. 1 q u ali ty i n formation this product has been qualified in accordance with the automotive electronics council (aec) standard q101 - stress test qualificat ion for discrete semiconductors , and is suitable for use in automotive applications. 9. package outline fig 19 . p ack age o u tline sot22 3 (sc - 7 3 ) fig 20 . p ack age o u tline sot89 ( sc-62 / t o -243) 04-11-10 dimensions in mm 6.7 6.3 3.1 2.9 1.8 1.5 7.3 6.7 3.7 3.3 1.1 0.7 13 2 4 4.6 2.3 0.8 0.6 0.32 0.22 06-08-29 dimensions in mm 4.6 4.4 1.8 1.4 1.6 1.4 1.2 0.8 3 1.5 0.48 0.35 0.44 0.23 0.53 0.40 2.6 2.4 4.25 3.75 12 3 pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 15 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors 10. packing information [1] f or furthe r information and the availability o f p acking method s, see secti o n 1 4 . [2] v alid for all avail able sele ction gro up s . [3] t 1: n ormal t aping [4] t 3: 9 0 ? rot ated t aping fig 21 . p ack age o u tline sot10 6 1 ( huson 3) 09-11-12 dimensions in mm 0.65 max 2.1 1.9 1.6 1.4 0.35 0.25 0.45 0.35 2.1 1.9 1.1 0.9 0.3 0.2 1.05 0.95 1.3 2 3 1 t a ble 9. pack in g meth od s the indicated -xxx are the last thre e digits of the 12nc ordering code. [1] type number [2] package description packing quantity 1000 3000 40 0 0 bcp52 s ot2 2 3 8 mm p i tch, 12 mm t a p e and ree l -1 1 5 - - 135 bcx52 s ot8 9 8 mm p i tch, 12 mm t a p e and ree l ; t 1 [3] -1 1 5 - - 135 8 mm p i tch, 12 mm t a p e and ree l ; t 3 [4] -146 - - bc5 2 p a sot1 061 4 mm p i tch, 8 mm t ape a nd reel - - 1 1 5 - pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 16 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors 1 1 . so lderin g fig 22 . r eflow sold ering fo otp r int sot 223 (sc-73 ) fi g 23 . w ave s o l d e rin g fo otpr in t so t2 23 (sc-73) sot223_fr 1.2 (4 ) 1.2 (3 ) 1.3 (4 ) 1.3 (3 ) 6.15 7 3.85 3.6 3.5 0.3 3.9 7.65 2.3 2.3 6.1 4 23 1 solder lands solder resist occupied area solder paste dimensions in mm sot223_fw 1.9 6.7 8.9 8.7 1.9 (3 ) 1.9 (2 ) 1.1 6.2 2.7 2.7 2 4 3 1 solder lands solder resist occupied area preferred transport direction during soldering dimensions in mm pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 17 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors fig 24 . r eflow sold ering fo otp r int sot 8 9 ( sc-62/t o -2 43) fi g 25 . w ave s o l d e r in g fo otpr in t so t8 9 ( sc -6 2/ t o -24 3) solder lands solder resist occupied area solder paste sot089_fr 1.2 1.9 2 2.25 4.75 1 (3 ) 0.7 (3 ) 0.6 (3 ) 1.1 (2 ) 1.2 0.85 0.2 0.5 1.7 4.85 3.95 4.6 1.5 1.5 dimensions in mm solder lands solder resist occupied area preferred transport direction during soldering sot089_fw 0.7 5.3 6.6 2.4 3.5 0.5 1.8 (2 ) 1.5 (2 ) 7.6 1.9 1.9 dimensions in mm pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 18 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors reflow soldering is the o nly recommende d solder ing met hod. fig 26 . r eflow sold ering fo otpr int sot106 1 ( h u son3 ) occupied area solder paste = solder lands dimensions in mm sot1061_fr solder resist 0.4 2.1 1.3 0.25 0.25 0.25 1.1 1.2 0.55 0.6 2.3 0.5 (2 ) 0.5 (2 ) 0.6 (2 ) 0.4 (2 ) 0.5 1.6 1.7 1.05 pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 19 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors 12. revision history t a b le 1 0 . r ev is i on hi st ory document id release date data sheet status change notice su pe rsed es bc p5 2_bcx5 2_bc52 p a v .9 201 1 101 8 p ro duct d a t a sh eet - b cp5 2_bcx52 v . 8 modifications: ? adde d t y pe nu mb ers: bc52 p a , bc52-10 p a an d bc52-16 p a ? section 1 ? product profile ? : upd ated ? table 6 and 7 : upda te d accordin g to la te st measure m e n t s ? figure 1 to 9 , 15 , 17 , 18 and 21 : u pda te d ? figure 10 to 14 : add ed ? section 8 ? test information ? : a dded ? section 11 ? soldering ? : ad ded ? section 13 ? legal information ? : u pdated bc p5 2_bcx5 2 v . 8 200 802 25 pro duct d at a sh eet - b c6 38_ bc p52_bcx5 2 v . 7 bc 638_ bcp52_ bc x5 2 v .7 200 706 26 pro duct d at a sh eet - b c6 38_ bc p52_bcx5 2 v . 6 bc 638_ bcp52_ bc x5 2 v .6 200 603 29 pro duct d at a sh eet - b c6 36_ 638_ 640 v . 5 bcp5 1_52 _53 v . 5 bcx5 1_52 _53 v . 4 bc 636_ 638 _640 v . 5 200 410 1 1 pro duct sp ecification - bc6 36_ 638_ 640 v . 4 bc p5 1_5 2_53 v . 5 200 302 06 pro duct sp ecification - bcp5 1_52 _53 v . 4 bc x5 1_5 2_53 v . 4 200 1 1 0 1 0 p ro duct sp ecification - bcx51_52_53 v.3 pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 20 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors 13. legal information 13.1 dat a sheet st atus [1 ] p le ase con s ul t t h e mo st r e cent ly iss ued do cum e n t b e fo r e i n i t i a ti ng or co mp l e ti ng a de sig n . [2 ] t h e te r m ? sh o r t d a t a sh ee t? is e xplaine d i n secti o n ?de finition s?. [3 ] t h e pr od uct st a tus o f de vice ( s ) d e scr i bed i n th is d o cu me nt m a y h a ve cha nge d si nce thi s d o cum e nt w a s p u b l i s h e d a n d ma y di f fe r in case of mu ltip le de vice s . the la test p r o d u c t st atu s i nf or m ati on i s a v ai l abl e on th e i ntern et at u r l htt p :// w w w .nxp .com . 13.2 definitions dr a f t ? the do c u m e nt is a draf t versi on onl y . the cont ent is st ill unde r int e rn al review and subje c t to f o rmal ap proval, which m a y re su lt in modif i cat i ons or add itio ns. nxp se miconduct o rs does not g i ve a n y rep resent a t io ns o r wa rrant ies as t o t he accu racy or compl e te ness o f inf o rma tio n in c l u ded her ein and shall hav e no liab ilit y fo r t he consequ ences o f use of such inf o rmat i on . short dat a sheet ? a shor t dat a she et is an extr act fr om a f ull da t a sh eet wit h t he same pr oduct t y pe numbe r(s) and t i t l e. a shor t dat a sh eet is int end ed for qu ick r efe rence only an d shou ld no t b e rel i ed u pon to cont ain det ailed and fu ll inf ormat i on. for det a iled and f ull inf orma tio n se e t he re levant f ull da t a sheet , which is availab l e on requ est vi a the lo c a l nx p semicond ucto rs sale s of fi ce . in case of a ny in co nsist en c y or conf lict wit h t he shor t dat a she et, th e fu ll dat a shee t shall pre v a il. p r o d u ct sp ec if i c a t io n ? the inf orma tio n and dat a p r ovide d i n a p r oduct dat a she et shal l d efi ne the spe c if icat ion of the pr oduct a s agr eed be tween nxp se mico nduct ors and it s cu st omer , u n less nx p s e micond uctor s an d custome r have explicit ly ag reed ot her wis e i n wri t in g. i n no event h owever , shall an ag reemen t be valid in which t he nxp semi co nduct ors p r odu ct is dee med to of f er fu nctio ns and quali t ies beyon d t hos e descri bed in th e pro duct da t a sh eet . 13.3 disclaimers li mi te d wa rr a n ty an d li a b il it y ? i nf ormat i on in th is documen t is bel ieved to be accurat e and re liabl e. however , nxp s emicondu ct ors doe s not give any rep resent a t io ns o r wa rrant ies, e x p ressed or implie d, as to t he accuracy or completen e ss of such informa tio n a nd shall have no lia bility for the consequ ences o f use of such inf o rmat i on . in n o e v e nt shall nxp s emicond uctor s be lia ble fo r a ny in dire ct , in cid ent a l , pun itive, spe c i a l or consequ ent ial damag es (inclu ding - wit hou t limit a t io n - lost prof it s , lost savings, business int e rrupt ion, cost s related t o the remov a l or rep l acement of an y pro duct s o r rework ch arge s) whe t he r or not such dama ges a r e based on t ort ( i ncludi ng negli gence) , warra nty , bre ach of cont ract or an y ot her le gal th eory . not with s t andin g a n y d a mages th at cust omer might incur fo r any r eason what soe v e r , nxp semi co nduct ors? ag greg at e and cumulat i ve l i abil i ty t oward s custome r for t he pro duct s d escr i bed he rein shall be li mite d i n a c cor dance wit h t he t e rms a nd condit i on s of comme rcial sale of nxp s e micondu ct or s. ri ght to m ake c h a n ge s ? nx p semicon ducto rs re s e rves t he rig ht t o ma k e chang es t o inf o rmat i on pu blished in t his documen t, i ncludin g wit ho ut limit a t io n sp ecificat ion s an d p r odu ct descript i ons, a t any time a nd with out not ice. this documen t super sed e s a nd repla c e s all inf o rma tio n sup p lied pr ior to t he pu blicat ion her eof . s u it a b il it y f o r us e ? nx p semicon ducto rs pr oduct s are no t design ed, aut hor ized or warran t e d t o be suit a b le fo r use i n l i fe supp ort , lif e-crit ical or safe ty-crit i cal syst ems o r e quip ment , nor in ap plicat ions where f a ilu re or malf unct i on of an nx p s emicond uctor s pro duct can rea s o nabl y be expe ct ed to result in per sonal inju ry , d eat h or seve re prop ert y or envi ronme nt al damag e. nxp s e micondu c t ors accept s no liab ilit y f o r inclusion an d/o r use o f nxp semicon duct ors p r odu ct s in such equip m ent o r a pplicat ion s and th eref ore such inclusion a nd/ or use is at the cust omer ? s own risk. ap plic ation s ? a ppli c a t ions t hat a r e describe d h erei n f or an y of t hese prod uct s ar e for il lustra tive pu rpos es only . nxp se mico nduct o rs makes no repr esent a t io n o r wa rran t y tha t such a pplication s will be suit a b le for the specifi ed use w i tho ut f urt her t esti ng or modif i cat i on. custome rs ar e responsib le for t he desig n a nd ope rat i on of t hei r a pplicat ion s and pr oduct s using nxp s emicondu ct or s pro duct s, and nxp semi conduct ors acce pt s no liabi lity fo r any a s sist a n ce wit h app licati ons o r cu st omer pr oduct design . it is cust omer ? s sol e r e sponsib ilit y t o d e t e rmine whe t he r t h e nxp semicon ducto rs p r odu ct is sui t able a nd f i t f or t he custome r ? s a pplicat ion s an d prod uct s pl anne d, as well as f o r t he plan ned app licati on and use of cu st ome r ? s t h ird p a rt y cust omer( s ) . custo mers sho u ld pro v id e appro p ria t e design an d o pera t in g saf eg uard s t o min i mize the r i sks asso cia t e d wit h t heir appl ica t ions a nd prod uct s. nxp semicon duct o rs d oes n o t accept any liabil i ty rela ted t o any def ault , damag e, cost s o r probl em wh ich is based on a n y weakne ss or def aul t in th e cu st ome r ? s ap plicat ions or prod uct s , or t he appl ica t io n o r use b y custo m er ? s th ird p a rt y custo mer(s). c u st omer is respo n sible f o r doing a ll n e cessa ry te st ing f o r th e cu st omer ? s app lic at ions and pro duct s u s i ng nxp semicon ducto rs p r oduct s in orde r to av oid a de fau l t of the ap plicat ions and th e p r odu ct s or of t he ap plicat ion or use by cu st omer ? s t hird p art y cu st ome r(s). nxp d oes n ot accept a n y liab ilit y in t h is r e sp ec t. li mi ting v a l ues ? s t ress above one or mo re limit ing values (as def ined in th e a b solut e maximum rati ngs s y s t em of i e c 6013 4) will c a use p e rman ent damag e t o the device. li miti ng va lues are stre ss rat i ngs onl y and (prope r) oper ati on of t he device at t hese or an y ot her cond iti ons a bove th ose g i ven in th e re co mm e nded o perat ing con dit ions se ct ion (if presen t) or t he chara c t e rist ics sect ions of t h is d o cument is no t warra nte d . const a nt or repe ate d exposure t o limit ing values will perma nent ly and irre v e rsibly af f e ct th e q uality a nd relia bility o f th e device. t e rms a n d condi tions o f comm ercial s a le ? n x p semic onduc tors prod uct s ar e so ld su bject t o the g ener a l t er m s and cond iti ons o f commercial sa le, a s pub lished at ht tp :/ /www .n xp .c om / p ro file /t er m s , unle s s ot herwise agre ed in a va lid writ ten in dividua l a gree m ent . in case an ind i vidual agre ement is conclud ed only th e t er m s and cond iti ons o f t he respect i ve agre ement sh all appl y . nxp s emicondu ct ors her eby e x p r essly ob ject s t o appl yin g the cust omer ? s gene ral te rms an d con dit ions with re gard t o th e purcha s e of nxp semicon duct o rs p r odu ct s by cu st omer . no offe r to sel l or l i ce nse ? not h ing i n th is documen t may be int e rpr e t ed or co nstr ued a s an of f er t o sel l pro duct s t hat is ope n f or accept ance o r t he gr ant , co nveyance or implicat ion o f any lic ense unde r any cop y r i ght s, p a ten t s o r ot her indu st ria l o r inte llect ual pro pert y ri ght s. export c o nt r ol ? thi s docume n t as well as t h e it em(s) describ ed here i n may b e sub j ect t o e x p ort control regulations. export might require a prior authorization from competent authorities. document status [1] [2] product status [3] defi niti on obje ct ive [sho rt] dat a shee t d evelop ment this d ocument con t ain s dat a fro m t he obj ecti ve specif icati on fo r p roduct d e velop ment . preli minary [sho rt] dat a shee t q ua lif ica t io n t his d o cument con t ain s dat a fro m t he pre liminar y specif icat ion. product [short] data sheet production this document contains the product specification. pdf create 8 trial www.nuance.com
b c p52 _ bcx 52_ bc52 p a al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 1. al l r i ght s r e se r v e d. product data sheet rev. 9 ? 18 october 2011 21 of 22 nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors qui ck re fer ence dat a ? t h e q uick r efe rence dat a is an ext r act of th e pro duct dat a given in th e limit i ng values and cha r acte risti c s se ct ion s of t his docume nt, and as su ch is not comp le t e , exha ustive or leg a lly bindi ng. 13.4 t r ademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. cont act information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com pdf create 8 trial www.nuance.com
nxp semiconductors bcp52; bcx52; bc52p a 60 v, 1 a pnp medium power transistors ? nxp b . v . 20 11 . a l l r i g h t s re se rv ed. for m o r e i n for m a t i o n , plea se visit: htt p :// w ww.n x p.co m for sale s of fice a d d r e sses, plea se se nd an ema i l t o : s a lesa ddre sses@ nxp . com date of release: 18 october 2011 document identifier: bcp52_bcx52_BC52PA please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. content s 1 prod uct profi l e . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 gener a l description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benef i t s . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick ref e rence dat a . . . . . . . . . . . . . . . . . . . . 1 2 pi nn ing i n fo rmatio n . . . . . . . . . . . . . . . . . . . . . . 2 3 o r d e ri ng in formatio n . . . . . . . . . . . . . . . . . . . . . 3 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 l i miti ng val u es . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6 t h ermal characteri s tics . . . . . . . . . . . . . . . . . . 6 7 ch aract e ristics . . . . . . . . . . . . . . . . . . . . . . . . . 12 8 t e st inf o rmati on . . . . . . . . . . . . . . . . . . . . . . . . 14 8.1 qualit y information . . . . . . . . . . . . . . . . . . . . . 14 9 packag e ou tlin e . . . . . . . . . . . . . . . . . . . . . . . . 14 10 packi n g in fo rmatio n . . . . . . . . . . . . . . . . . . . . 15 1 1 so ld erin g . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12 revi sion h istory . . . . . . . . . . . . . . . . . . . . . . . . 19 13 l e g a l in fo rmatio n . . . . . . . . . . . . . . . . . . . . . . . 20 13. 1 dat a sheet st at us . . . . . . . . . . . . . . . . . . . . . . 20 13. 2 def i nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 13. 3 dis c laimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 13. 4 t r ademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 14 co nt act i n fo rmatio n . . . . . . . . . . . . . . . . . . . . . 21 15 co ntent s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 pdf create 8 trial www.nuance.com


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