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| zpd2v7b...zpd75b silicon epitaxial planar zener diodes absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 500 1) mw junction temperature t j 175 o c storage temperature range t stg - 55 to + 175 o c 1) valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r tha 0.3 1) k/mw forward voltage at i f = 100 ma v f 1 v 1) valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. max. 3.9 max. 1.9 glass case do-35 max. 0.5 min. 27.5 min. 27.5 xxx cathode band part no. st "st" brand dimensions in mm black black black ? product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com semtech
characteristics (t a = 25 o c unless otherwise noted) type zener voltage range 1) dynamic resistance min. reverse voltage v r (v) at i r = 100 na admissible zener current 2) v znom v zt at l zt z zt z zk at i zk at t a = 45 o c i z (ma) at t a = 25 o c i z (ma) (v) (v) (ma) max.( ? )max.( ? ) (ma) zpd2v7b 2.7 2.65...2.75 5 83 500 1 - 135 160 zpd3v0b 3.0 2.94...3.06 5 95 500 1 - 117 140 zpd3v3b 3.3 3.23...3.37 5 95 500 1 - 109 130 zpd3v6b 3.6 3.53...3.67 5 95 500 1 - 101 120 zpd3v9b 3.9 3.82...3.98 5 95 500 1 - 92 110 zpd4v3b 4.3 4.21...4.39 5 95 500 1 - 85 100 zpd4v7b 4.7 4.61...4.79 5 78 500 1 - 76 90 zpd5v1b 5.1 5...5.2 5 60 480 1 0.8 67 80 zpd5v6b 5.6 5.49...5.71 5 40 400 1 1 59 70 zpd6v2b 6.2 6.08...6.32 5 10 200 1 2 54 64 zpd6v8b 6.8 6.66...6.94 5 8 150 1 3 49 58 zpd7v5b 7.5 7.35...7.65 5 7 50 1 5 44 53 zpd8v2b 8.2 8.04...8.36 5 7 50 1 6 40 47 zpd9v1b 9.1 8.92...9.28 5 10 50 1 7 36 43 zpd10b 10 9.8...10.2 5 15 70 1 7.5 33 40 zpd11b 11 10.8...11.2 5 20 70 1 8.5 30 36 zpd12b 12 11.8...12.2 5 20 90 1 9 28 32 zpd13b 13 12.7...13.3 5 25 110 1 10 25 29 zpd15b 15 14.7...15.3 5 30 110 1 11 23 27 zpd16b 16 15.7...16.3 5 40 170 1 12 20 24 zpd18b 18 17.6...18.4 5 50 170 1 14 18 21 zpd20b 20 19.6...20.4 5 50 220 1 15 17 20 zpd22b 22 21.6...22.4 5 55 220 1 17 16 18 zpd24b 24 23.5...24.5 5 80 220 1 18 13 16 ZPD27B 27 26.5...27.5 5 80 250 1 20 12 14 zpd30b 30 29.4...30.6 5 80 250 1 22.5 10 13 zpd33b 33 32.3...33.7 5 80 250 1 25 9 12 zpd36b 36 35.3...36.7 5 90 250 1 27 9 11 zpd39b 39 38.2...39.8 5 90 300 1 29 8 10 zpd43b 43 42.1...43.9 5 100 700 1 32 7 9.2 zpd47b 47 46.1...47.9 5 100 750 1 35 6 8.5 zpd51b 51 50...52 5 100 750 1 38 6 7.8 zpd56b 56 54.9?57.1 2. 5 135 1000 0.5 42 5.2 7.1 zpd62b 62 60.8?63.2 2. 5 150 1000 0.5 47 4.8 6.4 zpd68b 68 66.6?69.4 2. 5 200 1000 0.5 51 4.1 5.8 zpd75b 75 73.5..76.5 2. 5 250 1500 0.5 55 3.9 5.3 1) tested with pulses t p = 20 ms. 2) valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. zpd2v7b...zpd75b silicon epitaxial planar zener diodes ? product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com semtech 10 v 9 78 6 45 3 2 01 iz 10 0 test current iz 5ma 0 10 30 20 vz 20 breakdown characteristics t j = constant (pulsed) ma 30 vz 40 v zpd... tj=25 c o iz test current iz 5ma 10 0 20 30 40 breakdown characteristics t j = constant (pulsed) tj=25 c 50 ma o zpd... zpd 1b zpd2v7b zpd3v9b zpd3v3b zpd4v7b zpd5v6b zpd6v8b zpd8v2b zpd10b zpd12b zpd15b zpd18b zpd22b ZPD27B zpd33b zpd36b zpd2v7b...zpd75b silicon epitaxial planar zener diodes ? product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com semtech |
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