20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 designer's? data sheet switchmode series npn silicon power transistors these transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. they are particularly suited for line-operated switchmode applications. the MJ16012 and mjw16012 are selected high gain versions of the mj16010 and mjw16010 for applications where drive current is limited. mj16010 mjw16010 MJ16012* mjw16012 switching regulators inverters solenoids relay drivers motor controls deflection circuits fast turn-off times ? tc = 100c 50 ns inductive fall time (typ) 90 ns inductive crossover time (typ) 800 ns inductive storage time (typ) 100c performance specified for: reverse-biased soa with inductive loads switching times with inductive loads saturation voltages leakage currents 15 ampere npn silicon power transistors 450 volts 135 and 175 watts maximum ratings rating collector-emitter voltage collector-emitter voltage emitter-base voltage collector current ? continuous -peak(1) base current ? continuous -peak(1) total device dissipation @tc = 25c @tc = 100c derate above 25c operating and storage junction temperature range symbol vceo vcev veb ig 'cm ib ibm pd tj. tstg mj 16010 MJ16012 mjw16010 mjw16012 450 850 6.0 15 20 10 15 1 75 100 1.0 -65 to 200 135 538 1.11 -55 to 150 unit vdc vdc vdc adc adc watts w/c c thermal characteristics characteristic thermal resistance, junction to case lead temperature for soldering purposes, 1/8" from case for 5 seconds symbol rsjc tl max 1.0 0.93 275 unit c/w c (to-3) mj16010 MJ16012 to-247ae mjw16010 mjw16012 (1) pulse test: pulse width s 50 us, duty cycle > 10% nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
mj16010 mjw16o10 MJ16012 mjw16012 electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector-emitter sustaining voltage (table 2) (1c = 100 ma, ib = 0) collector cutoff current (vcev = 850 vdc, vbe(off) = 1 -5 vdc) (vcev = 850 vdc, vbe(off) = 1-5 vdc, tc = 100c) collector cutoff current (vce = 850 vdc, rbe = so u, tc = iooc) emitter cutoff current (veb = 6.0 vdc, ig = o) vceo(sus) 'cev icer iebo 450 ? ? ? ? ? ? ? ? 0.25 1.5 2.5 10 vdc madc madc madc second breakdown second breakdown collector current with base forward biased clamped inductive soa with base reverse biased 's/b rbsoa see figure 15 see figure 16 on characteristics (1) collector-emitter saturation voltage (1c = 5.0 adc, ib = 0.7 adc) (ic = 10adc, ib = 1.3 adc) (lc = 10 adc, ib = 1.3 adc, tc = 100c) base-emitter saturation voltage (\ = 10 adc, ib = 1.3 adc) (1c = 10 adc, ib = 1.3 adc, tc = 100c) dc current gain (ic = 15 adc, vce = 5.0vdc) vce(sat) vbe(sat) hfe ? ? ? 5.0 ? ? ? ? ? 2.5 3.0 3.0 1.5 1.5 ? vdc vdc ? dynamic characteristics output capacitance (vcb = 10 vdc, ie = 0, ftest = 1 -0 khz) cob ? ? 400 pf switching characteristics resistive load (table 1) delay time rose time storage time fall time storage time fall time (1c = 10 adc, vcg = 250 vdc, 'bi ~ 1 3 adc pw = 30 us, duty cycle < 2.0%) (lb2 = 2.6adc, rb2=1.6fl) (vbe(off) = 5-0 vdc) td tr ts tf ?8 tf ? ? ? ? ? ? 20 200 1200 200 650 80 ? ? ? ? ? ? ns inductive load (table 2) storage time fall time crossover time storage time fall time crossover time ib1 = 1.3 adc, vbe(off) = 5.0 vdc, vce(pk) = 400 vdc) (tc = 100c) (tc = 150c) tsv tfi tc ?sv tfi tc ? ? ? ? ? 800 50 90 1050 70 120 1800 200 250 ? ? ? ns (1) pulse test: pulse width = 300 us, duty cycle < 2.0%
mj16010 mjw16010 mj16o12 mjw16012 electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector-emitter sustaining voltage (table 2) (ic = 100ma, ib = 0) collector cutoff current (vcev = 850 vdc, vbe(off) = 1 -5 vdc) (vcev = 850 vdc, vbe(off) = 1 -5 vdc. tc = 1 00c) collector cutoff current (vce = 850 vdc, rbe = so n, tc = iooc) emitter cutoff current ir/ i \ 4do vrtrm (tc = 100c) (tc = 150c) tsv tfl tc tsv tfi tc ? ? ? ? ? ? 650 30 50 850 30 70 1500 150 200 ? ? ns (1) pulse test: pulse width = 300 us, duty cycle < 2.0%
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