\l cs , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BUZ54 powermos transistor general description n-channel enhancement mode field-effect power transistor in a metal envelope. this device is intended for use in switched mode power supplies (smps), motor control, welding, dc/dc and dc/ac converters, and in general purpose switching applications. quick reference data symbol vds id ptot rds(on) parameter drain-source voltage drain current (d.c.) total power dissipation drain-source on-state resistance max. 1000 5,1 125 2,0 unit v a w n mechanical data dimensions in mm net mass: 12 g pinning: 1 - gate 2 ? drain 3 " source 25,4 ~8,3~ 38,84 30,1 19,5 10,9-* ftg. 1 t03; drain connected to mounting base. 4,2 ,^j 1,55 1 max 7z?3??!.3 notes 1. observe the general handling precautions for electrostatic-discharge sensitive devices (esds) to prevent damage to mos gate oxide. 2. accessories supplied on request: refer to mounting instructions for to3 envelopes. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.b'eboth accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
ratings limiting values in accordance with the absolute maximum system (iec 134) symbol vds vdgr vgs id id !dm ptot tstg tj parameter drain-source voltage drain-gate voltage gate-source voltage drain current (d.c.) drain current (d.c.) drain current (pulse peak value) total power dissipation storage temperature junction temperature conditions _ rgs = 20 kn - tmb- 25 c tmb?100c tmb= 25 c tmb- 25 c - ? m1n. - - - - - - - -55 ? max. 1000 1000 20 5,1 3,2 20 125 iso 150 unit v v v a a a w c c thermal resistances from junction to mounting base from junction to ambient rthj-mb-l,ok/w rthj-a =35 k/w static characteristics tmb * 25 c unless otherwise specified symbol v(br)dss vgs |
