zss.mi-condu.ckoi \p\oducti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 general description n-channel enhancement mode field-effect power ttansistoi in a metal envelope. this device is intended for use in switched mode power supplies (smps), motor control, welding, dc/dc and dc/ac converters, and in general purpose switching applications. BUZ54A power mos transistor quick reference data symbol vds id ptot rds(on) parameter dialn-source voltage drain current (d.c.) total power dissipation drain-source on-state resistance max 1000 4,5 125 2,6 unit v. a w n mechanical data dimensions in mm net man: 12 g pinning: 1 = gate 2 - drain 3 = source 25,4- *8,3*i 38,84 30,1 19,5 4,2 d?* 1,55 *10,9-~ 1,6? -*-11,o-j fig, i to3; drain connected to mounting base. notes 1. observe the general handling precautions for electrostatic-discharge sensitive devices (esds) to prevent damage to mos gate oxide. 2. accessories supplied on request: refer to mounting instructions for to3 envelopes. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
ratings limiting values in accordance with the absolute maximum system (iec 134) symbol vds vdgr vgs id id idm plot tstg tj parameter drain-source voltage drain-gate voltage gate-source voltage drain current (d.c.) drain current (d.c.) drain current (pulse peak value) total power dissipation storage temperature junction temperature conditions - rgs ? 20 kn - tmb= 25-0 tn.b-100-c tmb= 25 "c tmb = 25 'c - - min. - - - - ? - - -55 - max. 1000- 1000 20 4,5 2,8 18 125 150 150 unit v v v a a a w "c c thermal resistances from junction to mounting base from junction to ambient rthj-mb rthj-a = 1,0 k/w = 35 k/w static characteristics tmb ~ 25 c unless otherwise specified symbol v(br)dss vgs(to) idss idss igss rds(on) parameter drain-source breakdown voltage. gate threshold voltage zero gate voltage drain current zero gate voltage drain current gate source leakage current drain-source on-state resistance conditions vgs-ov; id "0,25ma yds = vgs: id = ima vds =1000 v;vgs = o v;tj = 25 c vds = 1000 v;vgs = 0 v;tj = 125 c vgs = 20v;vds = ov vgs - 10 v; id = 2,6 a min. 1000 2,1 typ. 3,0 20 0,1 10 2.3 max. 4,0 2so 1,0 100 2,6 unit v v ma ma na ft dynamic characteristics tmb * 25 c unless otherwise specified symbol gfs qss gojs cm *d on tr tdoff tf ld ls parameter forward transconductance input capacitance output capacitance feedback capacitance turn-on delay time turn-on rise time turn-off delay time turn-off fall time internal drain inductance internal source inductance conditions vds = 25v; id = 2,6 a vgs = 0 v; yds " 25 v;f = 1 mhz vdd=30v;id = 2.4a; vgs ? 10 v; rgs ? so n; rgen = 50 n measured from contact screw on header closei to source pin and centre of die measured from source lead 6 mm from package to source bond pad min. 1,4 - - - typ. 3,5 3900 180 60 60 90 330 110 5,0 12,5 max, - 5000 300 90 90 140 430 140 - unit s pf pf pf ns ns ns ns nh nh
reverse diode ratings and characteristics tmb ? 25 c unless otherwise specified symbol jdr idrm vsd trr qrr parameter continuous reverse drain current pulsed reverse drain current diode forward on-voltage reverse recovery time reverse recovery charge conditions tufc-wc tmb- 25 "c lf = 9a;vos = ov; tj = 25c if = 4,5 a;tj = 25c -dif/dt = 100 a/ms; tj = 25c; vcs = 0 v; vr = 100 v min. - - typ. 1,5 2000 30 max 4,5 18 1,4 - unit a a v ns ?ic 140 w p 120 pd t 100 80 60 40 20 0 fig. 2 s s s s s s \ \ \ 50 100 "c 150 ? -rc power dissipation pj) = f(tmb), 10" 10 5 10' 5 102 5 103 v ?? vds fig. 4 safe operating area lo(dc) and parameter: tp: d = 0,01; tmb = 25c. fig.3 topical output characteristics id - f(vos) parameter: vcs- &0 *" p"lse tes'! 10 a id s fig.5 1 (. t j 1 i / \ 1 ) s v 10 -vk ypical transfer characteristic id =f(^gs) conditions: so impulse test; vd$= 25 v, "mb-2sc.
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