naina semiconductor ltd. NPS35 1 d-95, sector 63, noida C 201301, india ? tel: 012 0-4205450 ? fax: 0120-4273653 sales@nainasemi.com ? www.nainasemi.com press fit scr ?, 35 amps features ? improved glass passivation for high reliability ? exceptional stability at high temperatures ? metric thread type available ? low thermal resistance electrical characteristics (t a = 25 0 c unless otherwise specified) parameter symbol part numbers units maximum repetitive peak reverse voltage, v rrm 50 NPS350 v 100 NPS351 200 NPS352 400 NPS354 600 NPS356 rms on-state current i t(rms) 35 a non-repetitive peak surge on-state current, one cyc le i tsm 350 a peak gate trigger current i gtm 2 a peak gate power dissipation @ i gt i gtm p gm 20 w average gate power dissipation p g(av) 0.5 w peak off-state current i drm & i rrm 1.0 ma maximum instantaneous forward voltage drop v tm 1.6 v dc holding current i h 50 ma critical rate-of-rise of off-state voltage dv/dt 20 0 v/sec dc gate trigger current i gt 25 ma dc gate trigger voltage v gt 2.0 v gate controlled turn-on time tgt 2.5 sec thermal and mechanical specifications (t a = 25 o c, unless otherwise noted) parameters symbol values units maximum operating junction temperature range t j - 40 to +110 o c maximum storage temperature range t stg - 40 to +150 o c maximum thermal resistance, junction to case r (j-c) 0.9 o c/w approximate weight w 15 g to - 203 /f
naina semiconductor ltd. NPS35 2 d-95, sector 63, noida C 201301, india ? tel: 012 0-4205450 ? fax: 0120-4273653 sales@nainasemi.com ? www.nainasemi.com package outline (all dimensions in mm) ordering table nps 35 0,1,2,4,6 1 2 3 1 C press fit scr 2 C current, i f(av) 3 C voltage, v rrm (see table)
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