schottky barrier diode rb085b-40 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1) power mold type. (cpd) 2) low v f 3) high reliability ? construction ? structure silicon epitaxial planar ? taping dimensions (unit : mm) ? absolute maximum ratings (ta=25 ? c) symbol unit v rm v v r v io a i fsm a tj c tstg c ? electrical characteristic (ta=25 ? c) symbol min. typ. max. unit forward voltage v f - - 0.55 v i f =5.0a reverse current i r - - 200 ? a v r =40v thermal impedance ? jc - - 6.0 ? c/w junction to case parameter limits (*1) rating of per diode : io/2 junction temperature 150 storage temperature ? 40 to ? 150 average rectified forward current(*1) 10 reverse voltage (repetitive peak) 45 reverse voltag (dc) 40 conditions parameter forward current surge peak(60hz / 1cyc)(*1) 45 (1) (2) (3) cpd 1.6 2.3 1.6 2.3 3.0 2.0 6.0 6.0 1/3 2011.04 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb085b-40 ? electrical characteristic curves 0 5 10 15 20 25 30 ave:12.30ns ta=25 ? c i f =0.5a i r =1a irr=0.25*i r n=10pcs 0 5 10 15 0 5 10 15 20 dc d=1/2 sin( ? =180) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=100ma i f =3a 300us t ime mounted on epoxy board 10 100 1000 1 10 100 t ifsm 10 100 1000 1 10 100 8.3ms ifsm 1cyc 8.3ms 480 490 500 510 520 530 ave:504.0mv ta=25 ? c i f =5a n=30pcs 0 50 100 150 200 250 300 ave:20.3ua ta=25 ? c v r =40v n=30pcs 700 710 720 730 740 750 760 770 780 790 800 ave:728.1pf ta=25 ? c f=1mhz v r =0v n=10pcs 1 10 100 1000 0102030 f=1mhz 0.01 0.1 1 10 100 1000 10000 100000 010203040 ta=150 ? c ta=125 ? c ta=75 ? c ta=25 ? c ta=-25 ? c 0.01 0.1 1 10 0 100 200 300 400 500 600 ta=150 ? c forward voltage : v f (mv) v f -i f characteristics forward current:i f (a) reverse current:i r (ua) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage : v r (v) v r -ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (ua) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map peak surge forward current:i fsm (a) peak surge forward current:i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current:i fsm (a) time:t(ms) i fsm -t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth ( ? c/w) forward power dissipation:pf(w) average rectified forward current : io(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) 0 50 100 150 200 250 300 ave:156.0a 8.3ms ifsm 1cyc ta=125 ? c ta=75 ? c ta=-25 ? c ta=25 ? c i fsm dispersion map 2/3 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb085b-40 0 1 2 3 4 5 0 10203040 sin( ? 180) d=1/2 dc 0 10 20 30 0 25 50 75 100 125 150 t tj=150 ? c d=t/t t v r io v r =20 v 0a 0v sin( ?? 180) d=1/2 dc 0 10 20 30 0 25 50 75 100 125 150 t tj=150 ? c d=t/t t v r io v r =20 v 0a 0v dc d=1/2 sin( ? =180) reverse power dissipation:p r (w) reverse voltage : v r (v) v r -p r characteristics ambient temperature:ta( ? c) derating curve (io-ta) average rectifide forward current:io(a) average rectified forward current:io(a) case temparature:tc( ? c) derating curve (io-tc) electrostatic ddischarge test esd(kv) esd dispersion map 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k ? c=200pf r=0 ? ave:11.5kv 3/3 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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