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this is information on a product in full production. october 2012 doc id 022339 rev 2 1/13 13 STL23NM50N n-channel 500 v, 0.170 typ., 14 a mdmesh? ii power mosfet in a powerflat? 8x8 hv package datasheet ? production data features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d STL23NM50N 550 v < 0.210 14 a (1) 1. the value is rated according to r thj-case 3 3 3 ' $ 0ower&,!4?x(6 "ottomview !-v $ ' 3 table 1. device summary order code marking package packaging STL23NM50N 23nm50n powerflat? 8x8 hv tape and reel www.st.com
contents STL23NM50N 2/13 doc id 022339 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STL23NM50N electrical ratings doc id 022339 rev 2 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 500 v v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case drain current (continuous) at t c = 25 c 14 a i d (1) drain current (continuous) at t c = 100 c 11 a i d (3) drain current (continuous) at t amb = 25 c 2.8 a i d (3) drain current (continuous) at t amb = 100 c 2.1 a i dm (1),(2) 2. pulse width limited by safe operating area drain current (pulsed) 56 a p tot (3) 3. when mounted on fr-4 board of inch2, 2oz cu total dissipation at t amb = 25 c 3 w p tot (1) total dissipation at t c = 25 c 125 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 4a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 300 mj dv/dt (4) 4. i sd 14 a, di/dt 400 a/s, v dspeak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1 c/w r thj-amb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-amb max 45 c/w
electrical characteristics STL23NM50N 4/13 doc id 022339 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 500 v i dss zero gate voltage drain current v ds = max rating v ds = max rating, t c =125 c v gs = 0 1 100 a a i gss gate-body leakage current v gs = 25 v, v ds = 0 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 7 a 0.170 0.210 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1330 84 4.8 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 400 v - 210 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 17 a, v gs = 10 v, (see figure 14) - 45 7 24 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20 mv open drain -4.6 - table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off-delay time fall time v dd = 250 v, i d = 17 a r g =4.7 v gs = 10 v (see figure 13) - 6.6 19 71 29 - ns ns ns ns
STL23NM50N electrical characteristics doc id 022339 rev 2 5/13 table 7. source drain diode symbol parameter test conditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 17 68 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 17 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s v dd = 60 v (see figure 18) - 286 3700 26 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 18) - 350 4800 27 ns nc a
electrical characteristics STL23NM50N 6/13 doc id 022339 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am10 3 72v1 10 -5 10 -4 10 - 3 10 -2 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 zth powerflat 8 x 8 hv ) $ 6 $3 6 ! 6 6 6 '3 6 !-v ) $ 6 '3 6 ! 6 $3 6 !-v bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 i d =1ma am10 3 74v1 r d s (on) 0.166 0.164 0.162 0.160 0 4 i d (a) ( ) 2 6 0.16 8 0.170 0.172 0.174 v g s =10v 10 8 12 14 0.176 0.17 8 am10 3 7 3 v1
STL23NM50N electrical characteristics doc id 022339 rev 2 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics 6 '3 1 g n# 6 6 $$ 6 ) $ ! 6 $3 6 $3 6 !-v # 6 $3 6 p& #iss #oss #rss !-v v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a am10 3 75v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.1 i d =7a am10 3 76v1 v s d 0 4 i s d (a) (v) 2 10 6 8 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c 12 14 1.4 am10 3 77v1
test circuits STL23NM50N 8/13 doc id 022339 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL23NM50N package mechanical data doc id 022339 rev 2 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. powerflat?8x8 hv mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.00 0.02 0.05 b 0.95 1.00 1.05 d8.00 e8.00 d2 7.05 7.20 7.30 e2 4.15 4.30 4.40 e2.00 l 0.40 0.50 0.60 aaa 0.10 bbb 0.10 ccc 0.10
package mechanical data STL23NM50N 10/13 doc id 022339 rev 2 figure 19. powerflat? 8x8 hv drawing mechanical data index area top view plane seating 0.08 c bottom view side view pin#1 id d e b a e2 d2 l 0.40 0.20 0.008 c bbb c a b b a aaa c aaa c a1 ccc c 8 222 8 71_rev_b
STL23NM50N package mechanical data doc id 022339 rev 2 11/13 figure 20. powerflat? 8x8 hv recommended footprint 7.30 1.05 2.00 7.70 4.40 0.60 footprint
revision history STL23NM50N 12/13 doc id 022339 rev 2 5 revision history table 9. document revision history date revision changes 10-oct-2011 1 first release. 08-oct-2012 2 updated title on the cover page. updated value for dv/dt on table 2: absolute maximum ratings . document status promoted from preliminary to production data.
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