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this is information on a product in full production. february 2014 docid025280 rev 2 1/18 18 stf15n95k5, stp15n95k5, STW15N95K5 n-channel 950 v, 0.41 typ., 12 a supermesh? 5 power mosfets in to-220fp, to-220 and to-247 packages datasheet - production data figure 1. internal schematic diagram features ? to-220 worldwide best r ds(on) ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using supermesh? 5 technology. this revolutionary, avalanche-rugged, high voltage power mosfet technology is based on an innovative proprietary vertical structure. the result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. to-220 1 2 3 tab 1 2 3 1 2 3 to-220fp to-247 d(2,tab) g(1) s(3) am01476v1 order codes v ds r ds(on)max i d p tot stf15n95k5 950 v 0.5 12 a 30 w stp15n95k5 170 w STW15N95K5 table 1. device summary order codes marking package packaging stf15n95k5 15n95k5 to-220fp tube stp15n95k5 15n95k5 to-220 STW15N95K5 15n95k5 to-247 www.st.com
contents stf15n95k5, stp15n95k5, STW15N95K5 2/18 docid025280 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid025280 rev 2 3/18 stf15n95k5, stp15n95k5, STW15N95K5 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-247 to-220fp v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 12 12 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 7.6 7.6 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 48 48 (1) a p tot total dissipation at t c = 25 c 170 30 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 4a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 124 mj esd gate-source human body model (r= 1,5 k , c = 100 pf) 2kv v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (3) 3. i sd 12, di/dt 100 a/ s, v ds(peak) v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (4) 4. v ds 760 v mosfet dv/dt ruggedness 50 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit to-220 to-247 to-220fp r thj-case thermal resistance junction-case max 0.74 4.2 c/w r thj-amb thermal resistance junction-amb max 62.5 50 62.5 c/w
electrical characteristics stf15n95k5, stp15n95k5, STW15N95K5 4/18 docid025280 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage drain current (v gs = 0) v ds = 950 v, 1 a v ds = 950 v, tc=125 c 50 a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a345v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 6 a 0.41 0.50 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 - 855 - pf c oss output capacitance - 65 pf c rss reverse transfer capacitance -1 pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 760 v - 104 - pf c o(er) (2) 2. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -38-pf r g intrinsic gate resistance f = 1 mhz open drain - 6 - q g total gate charge v dd = 760 v, i d = 12 a v gs =10 v (see figure 20 ) -30-nc q gs gate-source charge - 5 - nc q gd gate-drain charge - 22 - nc
docid025280 rev 2 5/18 stf15n95k5, stp15n95k5, STW15N95K5 electrical characteristics the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(v) voltage delay time v dd = 475 v, i d = 6 a, r g =4.7 , v gs =10 v (see figure 22 ) -23-ns t r(v) voltage rise time - 20 - ns t f(i) current fall time - 62 - ns t c(off) crossing time - 11 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) - 12 48 a a v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 12 a, v gs =0 - 1.5 v t rr reverse recovery time i sd = 12 a, v dd = 60 v di/dt = 100 a/ s, (see figure 21 ) - 444 ns q rr reverse recovery charge - 7 c i rrm reverse recovery current - 32 a t rr reverse recovery time i sd = 12 a,v dd = 60 v di/dt=100 a/ s, tj=150 c (see figure 21 ) - 630 ns q rr reverse recovery charge - 9.2 c i rrm reverse recovery current - 29 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d = 0 30 - - v
electrical characteristics stf15n95k5, stp15n95k5, STW15N95K5 6/18 docid025280 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp figure 3. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10 s 1ms 100 s 0.01 tj=150c tc=25c single pulse 10ms 100 am18027v1 figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10 s 1ms 100 s 0.1 tj=150c tc=25c single pulse 10ms 100 am18028v1 i d 10 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10 s 1ms 100 s 0.1 tj=150c tc=25c single pulse 10ms 100 am18029v1
docid025280 rev 2 7/18 stf15n95k5, stp15n95k5, STW15N95K5 electrical characteristics figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 25 15 5 0 0 5 v ds (v) 10 (a) 15 6v 7v v gs =10, 11v 10 20 8v 9v 20 am18030v1 i d 20 10 0 5 7 v gs (v) 9 (a) 6 8 10 5 15 25 v ds =20v am18031v1 v gs 6 4 2 0 0 10 q g (nc) (v) 30 8 15 20 10 12 300 200 100 0 400 500 v ds 5 25 v ds (v) 600 700 800 v dd =760 v i d =12 a am18032v1 r ds(on) 0.2 0.1 0 2 6 i d (a) ( ) 4 8 0.3 v gs =10v 10 0.4 0.5 0.6 0.7 0.8 am18033v1 c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 am18034v1 e oss 4 2 0 0 v ds (v) ( j) 200 6 400 600 8 10 800 12 14 am18035v1
electrical characteristics stf15n95k5, stp15n95k5, STW15N95K5 8/18 docid025280 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. normalized v ds vs temperature figure 17. source-drain diode forward characteristics v gs(th) 0.6 0.4 0.2 0 -100 0 t j (c) (norm) -50 0.8 150 50 100 i d =100 a 1 1.2 am18036v1 r ds(on) 2 1 0 -100 0 t j (c) (norm) 100 0.5 1.5 2.5 i d =6a v gs =10v am18037v1 v ds t j (c) (norm) 0.85 0.9 0.95 1 1.05 i d =1ma -100 0 -50 50 100 1.1 am18038v1 v sd 4 i sd (a) (v) 2 10 6 8 0.5 0.6 0.7 0.8 t j =-50c t j =150c t j =25c 0.9 1 am18039v1 figure 18. maximum avalanche energy vs starting t j ( $6 7 - ?& p- 9 '' 9 $0y
docid025280 rev 2 9/18 stf15n95k5, stp15n95k5, STW15N95K5 test circuits 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stf15n95k5, stp15n95k5, STW15N95K5 10/18 docid025280 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid025280 rev 2 11/18 stf15n95k5, stp15n95k5, STW15N95K5 package mechanical data figure 25. to-220fp drawing 7012510_rev_k_b
package mechanical data stf15n95k5, stp15n95k5, STW15N95K5 12/18 docid025280 rev 2 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid025280 rev 2 13/18 stf15n95k5, stp15n95k5, STW15N95K5 package mechanical data figure 26. to-220 type a drawing bw\sh$b5hyb7
package mechanical data stf15n95k5, stp15n95k5, STW15N95K5 14/18 docid025280 rev 2 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid025280 rev 2 15/18 stf15n95k5, stp15n95k5, STW15N95K5 package mechanical data figure 27. to-247 drawing table 11. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 0075325_g
package mechanical data stf15n95k5, stp15n95k5, STW15N95K5 16/18 docid025280 rev 2 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70 table 11. to-247 mechanical data (continued) dim. mm. min. typ. max.
docid025280 rev 2 17/18 stf15n95k5, stp15n95k5, STW15N95K5 revision history 5 revision history table 12. document revision history date revision changes 20-sep-2013 1 first release. 07-feb-2014 2 ? modified: i ar and e as values in table 2 ? added: note 4 in table 2 ? modified: r thj-case values in table 3 ? modified: typical values in table 5 , 6 and 7 ? added: section 2.1: electrical characteristics (curves) ? updated: figure 19 , 20 , 21 and 22 ? minor text changes
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