20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn darlingtion power transistor PMD10K60 description ? high dc current gain ? collector-emitter sustaining voltage- vceo(sus)= 60v(min) ? complement to type pmd11k60 applications ? designed for general purpose amplifier and low frequency switching applications absolute maximum ratings(tc=25'c) thermal characteristics symbol vcbo vceo vebo ic icp ib pc t] tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current -continuous collector current-peak base current collector power dissipation@tc=25c junction temperature storage temperature value 60 60 5.0 12 20 0.2 150 150 -65-200 unit v v v a a a w 'c 'c symbol rth j-c parameter thermalresistance, junction to case max 1.17 unit r/w pin 1.base 2. emitter 3. collect or (case) to-3 package dw a b c d e silicon npn darlingtion power transistor PMD10K60 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat) vse(sat) vbe(oh) icer iebo hfe fr cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cut-off current dc current gain current-gain ? bandwidth product output capacitance conditions lc=100ma;lb=0 lc= 6a; ib= 24ma lc= 6a; ib= 24ma lc= 6a; vce= 3v vce= 60v; rbe= 1 k 0 vce= 60v; rbe= 1 k q , tc=1 50 c veb= 5v; lc= 0 lc= 6a; vce= 3v lc= 5a; vce= 3v, f= 1khz ie= 0; vcb= 10v; f,est= 1.0mhz min 60 1000 4 max 2.0 2.8 2.8 1.0 5.0 2.0 20000 300 unit v v v v ma ma mhz pf
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