v rrm = 100 v - 600 v i f = 25 a features ? high surge capability do-4 package ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol S25B (r) s25d (r) unit repetitive peak reverse voltage v rrm 100 200 v rms reverse voltage v rms 70 140 v dc blocking voltage v dc 100 200 v 2. reverse polarity (r): stud is anode. S25B thru s25jr s25j (r) 400 280 s25g (r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) ? types from 100 v to 600 v v rrm silicon standard recover y diode conditions 600 420 600 400 dc blocking voltage v dc 100 200 v continuous forward current i f 25 25 a operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol S25B (r) s25d (r) unit diode forward voltage 1.1 1.1 10 10 a 12 12 ma thermal characteristics thermal resistance, junction - case r thjc 2.50 2.50 c/w 25 12 a 373 reverse current i r v f 373 v electrical characteristics, at tj = 25 c, unless otherwise specified v r = 50 v, t j = 25 c i f = 25 a, t j = 25 c t c 120 c conditions 373 373 -55 to 150 25 -55 to 150 s25j (r) 10 10 s25g (r) 2.50 v r = 50 v, t j = 175 c 2.50 1.1 1.1 12 -55 to 150 -55 to 150 t c = 25 c, t p = 8.3 ms 600 400 surge non-repetitive forward current, half sine wave i f,sm www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 1
S25B thru s25jr www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. S25B thru s25jr do- 4 (do-203aa) j g f a e d p n b c m inches millimeters min max min max a 10-32 unf b 0.424 0.437 10.77 11.10 c ----- 0.505 ----- 12.82 d ------ 0.800 ----- 20.30 e 0.453 0.492 11.50 12.50 f 0.114 0.140 2.90 3.50 g ----- 0.405 ----- 10.29 j ----- 0.216 ----- 5.50 m ----- 0.302 ----- 7.68 n 0.031 0.045 0.80 1.15 p 0.070 0.79 1.80 2.00 www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 3
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