- patented trench schottky technology - excellent high temperature stability - low forward voltage - low power loss/ high efficiency - high forward surge capability - ideal for automated placement - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 symbol unit v rrm v i f(av) a i f = 7.5a i f = 15a i f = 7.5a i f = 15a t j = 25c a t j = 125c ma r jl c/w t j c t stg c document number: ds_d1409004 version:a15 storage temperature range 35 instantaneous reverse current per diode at rated reverse voltage i r typical thermal resistance 9 operating temperature range - 55 to +150 - 55 to +150 15 v i fsm 250 max 0.57 - typ max typ max taiwan semiconductor features mechanical data - moisture sensitivity level: level 1, per j-std-020 maximum ratings and electrical characteristics (t a = 25 c unless otherwise noted) typical applications trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. polarity: as marked weight: 95mg (approximately) note 1: pulse test with pulse width = 300 s, 1% duty cycle 15a, 120v - 200v trench schottky rectifiers parameter maximum repetitive peak reverse voltage a maximum average forward rectified current 15 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode t j = 25c t j = 125c typ - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec to-277a (smpc) case: to-277a (smpc) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test tsp15h200s TSP15H150S tsp15h120s marking code 15h120 0.67 0.75 0.69 - 0.75 0.84 6 150 0.48 - 0.58 0.66 - 250 0.66 0.76 0.56 - 0.63 0.73 425 120 150 200 425 0.73 - 0.79 15h150 15h200 tsp15h120s - tsp15h200s instantaneous forward voltage per diode (note 1) v f 6 150 0.89 0.59 -
(t a = 25 c unless otherwise noted) document number: ds_d1409004 version:a15 order information (example) taiwan semiconductor ratings and characteristics curves tsp15h120s - tsp15h200s 0 5 10 15 20 0 25 50 75 100 125 150 average forward current (a) case temperature ( o c) fig.1- forward current derating curve with heatsink 30mm x 30mm 4 oz. pad pcb 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 instantaneous forward current (a) forward voltage (v) fig. 2- typical forward characteristics t j =125c t j =150c t j =100c t j =25c tsp15h120s TSP15H150S s1g green compound ? code packing ? code part ? no. 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 instantaneous forward current (a) forward voltage (v) fig. 3- typical forward characteristics t j =125c t j =150c t j =100c t j =25c TSP15H150S 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 instantaneous forward current (a) forward voltage (v) fig. 4- typical forward characteristics t j =125c t j =150c t j =100c t j =25c tsp15h200s
document number: ds_d1409004 version:a15 taiwan semiconductor tsp15h120s - tsp15h200s 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 7- typical reverse characteristics t j =150c t j =125c t j =100c t j =25c tsp15h200s 10 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 8- typical junction capacitance f=1.0mhz vsig=50mvp-p tsp15h120s TSP15H150S tsp15h200s 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 5- typical reverse characteristics t j =150c t j =125c t j =100c t j =25c tsp15h120s 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 6- typical reverse characteristics t j =150c t j =125c t j =100c t j =25c TSP15H150S
min max min max a 5.650 5.750 0.222 0.226 b 6.350 6.650 0.250 0.262 c 4.550 4.650 0.179 0.183 d 3.540 3.840 0.139 0.151 e 4.235 4.535 0.167 0.179 f 1.850 2.150 0.073 0.085 g 3.170 3.470 0.125 0.137 h 1.043 1.343 0.041 0.053 i 1.000 1.300 0.039 0.051 j 1.930 2.230 0.076 0.088 k 0.175 0.325 0.007 0.013 l 1.000 1.200 0.039 0.047 symbol a b c d e f p/n = marking code yw = date code f = factory code document number: ds_d1409004 version:a15 taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) tsp15h120s - tsp15h200s 1.27 0.050 suggested pad layout unit (mm) unit (inch) 4.80 0.189 6.80 0.268 1.04 0.041 marking diagram to-277a (smpc) 4.72 0.186 1.40 0.055
creat by art assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1409004 version:a15 tsp15h120s - tsp15h200s taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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