, fi ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BFW16A bfw17a catv-matv amplifiers description the bfw 16a and bfw 17a are multi-emitter sili- con planar epitaxial npn transistors in jedecto-39 metal case, with extremely good intermodulation properties and high power gain. they are primarily intended for final and driver stages in channel-and band-aerial amplifiers with high output power from 40 to 860 mhz. another possible application is as the final stage of the wide band vertical amplifier in high speed oscil- loscopes. to-39 internal schematic diagram pn q| npn absolute maximum ratings symbol vceo vcer vceo vebo ic icm plot tbij, t, parameter collector-bass voltage (ie - 0) collector-emitter voltage (ren s 50 n) collector-emitter voltage (ib = 0) emitter-base voltage (ic = 0) collector current collector peak current total power dissipation at tamb s 25 c at tcm? s 125 c storage and junction temperature value 40 40 25 3 150 300 0.7 1.5 ~ 65 to 200 unit v v v v ma ma w w c nj semi-conductora reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use n j semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
thermal data rth j-caae rth ]-amb thermal resistance junction-case max thermal resistance junction-ambient max 50 250 c/w -c/w electrical characteristics (tamb = 25 for bfw 16a only li/lln. 3 25 26 130 70 typ. 1.2 1,1 1.7 16 6.5 150 150 90 max. 20 0.75 4 6 unit ua v v ghz ghz pf pf db db db mw mw mw * pulsed: pulse duration = 300 us. duty cycle = 1 %. " ib = value for which ic - 110 ma at voe = 1v, (1) ip " 202 mhz, f, = 205 mhz, f(2,-p, - 208 mhz. (2) fp = 798 mhz. f, - b02 mhz, f(?,-pi = 806 mhz.
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