tesdu5v0/TESDU12V/tesdu24v taiwan semiconductor small signal product - meet iec61000-4-2 (esd) 15kv (air), 8kv (contact) - designed for mounting on small surface - protects one bi-directional i/o line - moisture sensitivity level 1 - working voltage : 5v, 12v, 24v - pb free version and rohs compliant - packing code with suffix "g" means green compound (halogen-free) - case: 0603 small outline plastic package - high temperature soldering guaranteed : 260c/10s - weight: 3 0.5 mg - cell phone handsets and accessories - notebooks, desktops, and servers - keypads, side keys, usb 2.0, lcd displays - portable instrumentation - touch panel symbol unit t j , t stg o c symbol unit tesdu5v0 TESDU12V tesdu24v tesdu5v0 TESDU12V tesdu24v tesdu5v0 TESDU12V tesdu24v tesdu5v0 TESDU12V tesdu24v document number: ds_s1501027 version: f15 10 v i pp = 5 a -51 junction capacitance v r = 0 v f = 1.0 mhz c j 15 pf 12 v i pp = 5 a -33 clamping voltage tesdu24v i pp = 1 a v c -47 v i pp = 5 a -15 clamping voltage TESDU12V i pp = 1 a v c -25 clamping voltage tesdu5v0 i pp = 1 a v c -9.8 reverse leakage current v r = 5 v i r -2 a v r = 12 v v r = 24 v reverse breakdown voltage i r = 1 ma v (br) 5.1 - v 13 - 25 - reverse stand-off voltage v rwm -5 v -12 -24 kv esd per iec 61000-4-2 (contact) 8 junction and storage temperature range -55 to +150 parameter min max TESDU12V 25 tesdu24v 47 esd per iec 61000-4-2 (air) v esd 15 mil-std-705, method 2026 guaranteed applications maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter value peak pulse power (tp=8/20 s waveform) tesdu5v0 p pp 75 w bi-directional esd protection diode features 0603 mechanical data - terminal : gold plated, solder per
tesdu5v0/TESDU12V/tesdu24v small signal product (t a =25c unless otherwise noted) document number: ds_s1501027 version: f15 taiwan semiconductor ratings and characteristics curves 0.01 0.1 1 10 0.1 1 10 100 1000 peak pulse power ppp (kw) fig. 1 non-repetitive peak pulse power vs. pulse time pulse duration ( s) 0 10 20 30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 percent of i pp time (us) fig. 2 pulse waveform td = ipp / 2 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 power rating (%) ambient temperature( o c) fig. 3 admissible power dissipation curve 0 5 10 15 0 5 10 15 20 25 normalized capacitance (pf) reverse voltage (v) fig. 4 typical junction capacitance f = 1.0 mhz TESDU12V tesdu24v waveform parameters: tr = 8 s , td = 20 s 0 10 20 30 40 50 60 012345 clamping voltage (v) peak pulse current (a) fig. 5 clamping voltage vs. peak pulse current waveform parameters: tr = 8 s , td = 20 s tesdu5v0 TESDU12V tesdu24v tesdu5v0
tesdu5v0/TESDU12V/tesdu24v package outline dimensions min max min max a 1.60 1.80 0.063 0.071 b 0.80 1.00 0.031 0.039 c 0.70 0.85 0.028 0.033 d e suggest pad layout a b c d note: the suggested land pattern dimensions have been pr ovided for reference only, as actual pad layouts may vary depending on application. part no. tesdu5v0 TESDU12V tesdu24v document number: ds_s1501027 version: f15 e24 1.85 0.073 marking marking e05 e12 0.60 0.024 1.00 0.039 0.65 0.026 0.45 (typ.) 0.018 (typ.) 0.70 (typ.) 0.028 (typ.) dim. unit (mm) unit (inch) typ. typ. taiwan semiconductor small signal product order information (example) 0603 dim. unit (mm) unit (inch) tesdu5v0 rzg green compound ? code packing ? code part ? no.
tesdu5v0/TESDU12V/tesdu24v taiwan semiconductor small signal product applications information designed to protect one data, i/o, or power supply line designed to protect sensitive electronics from damage or latch-up due to esd designed to replace multilayer varistors (mlvs) in portable applications features large cross-sectional area junctions for conducting high transient currents offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to mlvs the combination of small size and high esd surge capability makes them ideal for use in portable applications circuit board layout recommendations good circuit board layout is critical for the suppression of esd induced transients place the esd protection diode near the input termi nals or connectors to restrict transient coupling minimize the path length between the esd protection diode and the protected line minimize all conductive loops including power and ground loops the esd transient return path to ground should be kept as short as possible never run critical signals near board edges use ground planes whenever possible document number: ds_s1501027 version: f15
tesdu5v0/TESDU12V/tesdu24v small signal product assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_s1501027 version: f15 taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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