200ma axial leaded small signal switching diodes 1of2 features @ t a = 25 c unless otherwise specified features mechanical data a a b c d do-35 dim min max a 25.40 b 4.00 c 0.60 d 2.00 all dimensions in mm maximum ratings and electrical characteristics component in accordance to rohs 2002/95/ec lead (pb)-free component very low reverse current silicon planar diode and weee 2002/96/ec case: do35 glass case weight: approx. 125 mg cathode band color: black packaging codes/options: tr/10 k per 13" reel (52 mm tape), 50 k/box tap/10 k per ammopack (52 mm tape), 50 k/box parameter test condition symbol value unit peak reverse voltage, non repetitive v rsm 140 v repetitive peak reverse voltage v rrm 140 v reverse voltage v r 125 v peak forward surge current t p = 1 s i fsm 2a average forward current f = 50 hz i fav 200 ma parameter test condition symbol min ty p. max unit forward voltage i f = 100 ma v f 1000 mv reverse current e 300 lx, v r i r 3na e 300 lx, v r , t j = 125 c i r 0.5 a e 300 lx, v r = 60 v i r 1na breakdown voltage i r = 5 a, t p /t = 0.01, t p = 0.3 ms v (br) 140 v diode capacitance v r = 0, f = 1 mhz c d 5pf BAY135
2 o f 2 figure 1. reverse current vs. junction temperature 04 0 8 0 120 160 1 10 100 1000 10000 i- re v erse c u rrent (na) r t j - j u nction temperat u re (c) 200 94 9079 scattering limit v r = v rrm figure 2. forward current vs. forward voltage 0 0.4 0. 8 1.2 1.6 0.1 1 10 100 1000 i- for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 94 907 8 scattering limit t j =2 5 c
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