please design the appropriate reliability upon reviewing the ty semiconductor reliability handbook SSM3K04FU ? with built-in gate-source resistor: r gs = 1 m ? (typ.) ? 2.5 v gate drive ? low gate threshold voltage: v th = 0.7~1.3 v ? small package absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 10 v dc drain current i d 100 ma drain power dissipation p d 100 mw channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). marking equivalent circuit unit: mm weight: 0.006 g (typ.) smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 ? ? 15 a drain-source breakdown voltage v (br) dss i d = 100 a, v gs = 0 20 ? ? v drain cut-off current i dss v ds = 20 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.7 ? 1.3 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 10 ma 25 50 ? ms drain-source on resistance r ds (on) i d = 10 ma, v gs = 2.5 v ? 4 12 input capacitance c iss v ds = 3 v, v gs = 0, f = 1 mhz ? 11.0 ? pf reverse transfer capacitance c rss v ds = 3 v, v gs = 0, f = 1 mhz ? 3.3 ? pf output capacitance c oss v ds = 3 v, v gs = 0, f = 1 mhz ? 9.3 ? pf turn-on time t on v dd = 3 v, i d = 10 ma, v gs = 0~2.5 v ? 0.16 ? switching time turn-off time t off v dd = 3 v, i d = 10 ma, v gs = 0~2.5 v ? 0.19 ? s gate-source resistor r gs v gs = 0~10 v 0.7 1.0 1.3 m switching time test circuit (a) test circuit (b) v in v gs (c) v out v ds SSM3K04FU smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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